Direct observation of bias-dependence potential distribution in metal/HfO2 gate stack structures by hard x-ray photoelectron spectroscopy under device operation

2014 ◽  
Vol 115 (4) ◽  
pp. 043721 ◽  
Author(s):  
Y. Yamashita ◽  
H. Yoshikawa ◽  
T. Chikyo ◽  
K. Kobayashi
Keyword(s):  
Direct Observation ◽  
Photoelectron Spectroscopy ◽  
Potential Distribution ◽  
Gate Stack ◽  
X Ray ◽  
Dependence Potential ◽  
Device Operation

scholarly journals Bias-Dependence Potential Distribution in Gate Stack Structuresby Hard-X-ray Photoelectron Spectroscopy under Device Operation

Hyomen Kagaku ◽  
2014 ◽  
Vol 35 (7) ◽  
pp. 361-364
Author(s):  
Yoshiyuki YAMASHITA ◽  
Hideki YOSHIKAWA ◽  
Toyohiro CHIKYOW ◽  
Keisuke KOBAYASHI
Keyword(s):  
Photoelectron Spectroscopy ◽  
Potential Distribution ◽  
Gate Stack ◽  
X Ray ◽  
Dependence Potential ◽  
Device Operation

(Invited) Direct Observation of Electronic States in Gate Stack Structures: XPS under Device Operation

2019 ◽  
Vol 41 (7) ◽  
pp. 331-336 ◽  
Author(s):  
Yoshiyuki Yamashita ◽  
Hideki Yoshikawa ◽  
Toyohiro Chikyo ◽  
Keisuke Kobayashi
Keyword(s):  
Direct Observation ◽  
Electronic States ◽  
Gate Stack ◽  
Device Operation

ChemInform Abstract: DIRECT OBSERVATION OF SULFUR COORDINATION IN BEAN PLASTOCYANIN BY X-RAY PHOTOELECTRON SPECTROSCOPY

1975 ◽  
Vol 6 (36) ◽  
Author(s):  
EDWARD I. SOLOMON ◽  
PAULA J. CLENDENING ◽  
HARRY B. GRAY ◽  
F. J. GRUNTHANER
Keyword(s):  
Direct Observation ◽  
Photoelectron Spectroscopy ◽  
X Ray
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