Formation and characterization of hydrophobic glass surface treated by atmospheric pressure He/CH4 plasma

2014 ◽  
Vol 115 (4) ◽  
pp. 043307 ◽  
Author(s):  
Sooryun Noh ◽  
Se Youn Moon
Keyword(s):  
Atmospheric Pressure ◽  
Glass Surface

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

scholarly journals Merits of microwave plasmas for optical emission spectrometry – characterization of an axially viewed microwave-sustained, inductively coupled, atmospheric-pressure plasma (MICAP)

2020 ◽  
Vol 35 (10) ◽  
pp. 2369-2377
Author(s):  
Helmar Wiltsche ◽  
Matthias Wolfgang
Keyword(s):  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Optical Emission ◽  
Plasma Source ◽  
Optical Emission Spectrometry ◽  
Emission Spectrometry ◽  
Icp Oes ◽  
Microwave Plasmas ◽  
Inductively Coupled

The MICAP is a microwave driven plasma source employing nitrogen as the plasma gas. In this work we compare LODs and LOQs obtained in axial viewing with those obtained by ICP-OES and evaluate the effect of air instead of nitrogen as the plasma gas.

scholarly journals Characterization Of Nano-Second Laser Induced Plasmas From Al Target In Air At Atmospheric Pressure

2008 ◽  
Author(s):  
H. Hegazy ◽  
F. M. Abdel-Rahim ◽  
A. M. A. Nossair ◽  
S. H. Allam ◽  
Th. M. El-Sherbini ◽  
...  
Keyword(s):  
Atmospheric Pressure

Characterization of pulsed atmospheric-pressure plasma streams (PAPS) generated by a plasma gun

2012 ◽  
Vol 21 (3) ◽  
pp. 034017 ◽  
Author(s):  
E Robert ◽  
V Sarron ◽  
D Riès ◽  
S Dozias ◽  
M Vandamme ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Plasma Gun ◽  
Pressure Plasma

Characterization of HOCl Using Atmospheric Pressure Ionization Mass Spectrometry

1999 ◽  
Vol 103 (41) ◽  
pp. 8231-8238 ◽  
Author(s):  
Tracy E. Caldwell ◽  
K. L. Foster ◽  
Thorsten Benter ◽  
Sarka Langer ◽  
John C. Hemminger ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Atmospheric Pressure ◽  
Ionization Mass Spectrometry ◽  
Ionization Mass ◽  
Atmospheric Pressure Ionization ◽  
Pressure Ionization Mass Spectrometry
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