Influence of the carrier density in disordered organics with Gaussian density of states on organic field-effect transistors

2014 ◽  
Vol 115 (4) ◽  
pp. 044507 ◽  
Author(s):  
Susanne Scheinert ◽  
Gernot Paasch
2007 ◽  
Vol 31 ◽  
pp. 4-6 ◽  
Author(s):  
Harry L. Kwok

Hall measurement is an effective means to measure carrier density and mobility in metals and semiconductors. This work examined the carrier mobility determined in the accumulation layer of organic field-effect transistors (OFETS) and proposed a method to explain data taken from rubrene single-crystal devices. The model was used to extract information on the trap states and the properties of the transport layer at different temperature.


2016 ◽  
Vol 88 (24) ◽  
pp. 12330-12338 ◽  
Author(s):  
Marcello Berto ◽  
Stefano Casalini ◽  
Michele Di Lauro ◽  
Simone L. Marasso ◽  
Matteo Cocuzza ◽  
...  

2004 ◽  
Vol 3 (5) ◽  
pp. 317-322 ◽  
Author(s):  
S. Kobayashi ◽  
T. Nishikawa ◽  
T. Takenobu ◽  
S. Mori ◽  
T. Shimoda ◽  
...  

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