scholarly journals Fine structure of the red luminescence band in undoped GaN

2014 ◽  
Vol 104 (3) ◽  
pp. 032103 ◽  
Author(s):  
M. A. Reshchikov ◽  
A. Usikov ◽  
H. Helava ◽  
Yu. Makarov
Keyword(s):  
Fine Structure ◽  
Luminescence Band ◽  
Red Luminescence

Origin of the red luminescence band in photoluminescence spectra of ZnSe nanowires

2007 ◽  
Vol 90 (6) ◽  
pp. 063103 ◽  
Author(s):  
U. Philipose ◽  
S. Yang ◽  
T. Xu ◽  
Harry E. Ruda
Keyword(s):  
Luminescence Band ◽  
Photoluminescence Spectra ◽  
Znse Nanowires ◽  
Red Luminescence

scholarly journals New fine structure of red luminescence in ZnO observed under exciton resonance excitation

AIP Advances ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 045004 ◽  
Author(s):  
N. Zhou ◽  
B. C. Hu ◽  
Q. Y. Zhang ◽  
C. Y. Ma ◽  
S. Z. Hao
Keyword(s):  
Fine Structure ◽  
Resonance Excitation ◽  
Exciton Resonance ◽  
Red Luminescence

Circularly polarized exciton emission and fine structure of the luminescence band in Zn1−xCdxSe/ZnSe MQWs

1997 ◽  
Vol 72-74 ◽  
pp. 869-870 ◽  
Author(s):  
A. Reznitsky ◽  
A. Kornievsky ◽  
S. Permogorov ◽  
L. Tenishev ◽  
S. Verbin ◽  
...  
Keyword(s):  
Fine Structure ◽  
Luminescence Band ◽  
Circularly Polarized ◽  
Exciton Emission

scholarly journals DNA-modified silicon nanocrystals studied by X-ray luminescence and X-ray absorption spectroscopies: Observation of a strong infra-red luminescence band

2012 ◽  
Vol 111 (5) ◽  
pp. 054311 ◽  
Author(s):  
P. R. Coxon ◽  
M. Newman ◽  
M. R. C. Hunt ◽  
N. O’Farrell ◽  
B. R. Horrocks ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Luminescence Band ◽  
X Ray ◽  
Infra Red ◽  
Red Luminescence ◽  
X Ray Absorption

Fine structure in 1.4 eV luminescence band from plasma deposited amorphous silicon layers on silicon substrates

1996 ◽  
Vol 68 (11) ◽  
pp. 1458-1460 ◽  
Author(s):  
K. S. R. K. Rao ◽  
A. K. Sreedhar ◽  
H. L. Bhat ◽  
R. A. Singh ◽  
G. C. Dubey ◽  
...  
Keyword(s):  
Fine Structure ◽  
Amorphous Silicon ◽  
Luminescence Band ◽  
Silicon Substrates

Red-luminescence band: A tool for the quality assessment of germanium and silicon nanocrystals

2017 ◽  
Vol 419 ◽  
pp. 476-483 ◽  
Author(s):  
I. Fraj ◽  
L. Favre ◽  
T. David ◽  
M. Abbarchi ◽  
K. Liu ◽  
...  
Keyword(s):  
Quality Assessment ◽  
Silicon Nanocrystals ◽  
Luminescence Band ◽  
Red Luminescence

scholarly journals Zero-phonon line and fine structure of the yellow luminescence band in GaN

2016 ◽  
Vol 94 (3) ◽  
Author(s):  
M. A. Reshchikov ◽  
J. D. McNamara ◽  
F. Zhang ◽  
M. Monavarian ◽  
A. Usikov ◽  
...  
Keyword(s):  
Fine Structure ◽  
Luminescence Band ◽  
Yellow Luminescence ◽  
Zero Phonon Line ◽  
Phonon Line

scholarly journals Fine Structure of the 3.42 eV Emission Band in GaN

1995 ◽  
Vol 395 ◽  
Author(s):  
S. Fischer ◽  
C. Wetzel ◽  
W. Walukiewicz ◽  
E.E. Haller
Keyword(s):  
Fine Structure ◽  
Experimental Error ◽  
Luminescence Band ◽  
Structural Defects ◽  
Donor Level ◽  
High Quality ◽  
Oxygen Donor ◽  
Laser Activity ◽  
High Temperature Vapor

ABSTRACTA luminescence band centered around 3.42 eV is commonly observed in GaN. Its appearance has been tentatively assigned to an oxygen donor level. Stimulated laser activity has also been reported at this energy. We present a study of this band in GaN grown by high temperature vapor phase epitaxy (HTVPE). The high quality of this material, with an excitonic line width as narrow as 3 meV, allows us to distingish four different peak positions of this luminescence band. They appear at 3.4066, 3.4121, 3.4186, and 3.4238 eV (T = 6 K). Within the experimental error the lines exhibit an equidistant spacing of 6 meV. They show a pressure behavior similar to shallow levels described by effective mass theory. We discuss our results in the context of incorporation of oxygen and structural defects in GaN.

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