Photovoltaic effect of lead-free (Na0.82K0.18)0.5Bi4.5Ti4O15 ferroelectric thin film using Pt and indium tin oxide top electrodes

2014 ◽  
Vol 115 (3) ◽  
pp. 034107 ◽  
Author(s):  
Won Seok Woo ◽  
Sung Sik Won ◽  
Chang Won Ahn ◽  
Song A Chae ◽  
Aman Ullah ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Photovoltaic Effect ◽  
Ferroelectric Thin Film ◽  
Lead Free

Characteristics of Indium-Tin Oxide Thin Film Etched by Reactive Ion Etching

1994 ◽  
Vol 33 (Part 1, No. 12B) ◽  
pp. 7057-7060 ◽  
Author(s):  
Meiso Yokoyama ◽  
Jiin Wen Li ◽  
Shui Hsiang Su ◽  
Yan Kuin Su
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Reactive Ion Etching ◽  
Oxide Thin Film ◽  
Ion Etching

Effect of neutron irradiation on (K,Na,Li)(Ta,Nb)O3-CaZrO3 lead-free ferroelectric thin film with different oxide electrodes

2019 ◽  
Vol 788 ◽  
pp. 30-35
Author(s):  
Xiangyu Sun ◽  
Dongdong Gong ◽  
Liqiang Xu ◽  
Yicheng Wang ◽  
Feng Qin ◽  
...  
Keyword(s):  
Thin Film ◽  
Neutron Irradiation ◽  
Ferroelectric Thin Film ◽  
Lead Free ◽  
Oxide Electrodes

scholarly journals High energy storage performance in lead-free BiFeO3-BaTiO3 ferroelectric thin film fabricated by pulsed laser deposition

AIP Advances ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 085005 ◽  
Author(s):  
Yuqing Hu ◽  
Qingxiu Xie ◽  
Ruihong Liang ◽  
Xiangyong Zhao ◽  
Zhiyong Zhou ◽  
...  
Keyword(s):  
Thin Film ◽  
Energy Storage ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Film ◽  
High Energy ◽  
Laser Deposition ◽  
Lead Free ◽  
Storage Performance ◽  
High Energy Storage

scholarly journals Highly conductive low-temperature combustion-derived transparent indium tin oxide thin film

2021 ◽  
Author(s):  
Longfei Song ◽  
Tony Schenk ◽  
Emmanuel Defay ◽  
Sebastjan Glinsek
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Film ◽  
Low Temperature Combustion ◽  
Transparent Electronics ◽  
Temperature Combustion ◽  
Ito Thin Films

Highly conductive (conductivity 620 S cm−1) and transparent ITO thin films are achieved at low temperature (350 °C) through effective combustion solution processing via multistep coating. The properties show potential for next generation flexible and transparent electronics.

Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Technique

2016 ◽  
Vol 63 (3) ◽  
pp. 1072-1077 ◽  
Author(s):  
Xin Xu ◽  
Letao Zhang ◽  
Yang Shao ◽  
Zheyuan Chen ◽  
Yong Le ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film

Transparent Conducting Indium-Tin-Oxide Thin Film with Extremely Flatted Surface

2001 ◽  
Vol 666 ◽  
Author(s):  
Hiromichi Ohta ◽  
Masahiro Orita ◽  
Masahiro Hirano ◽  
Hideo Hosono
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Film Growth ◽  
Oxide Thin Film ◽  
Force Microscopy ◽  
Atomic Force ◽  
Out Of Plane ◽  
Key Factor ◽  
Surface Microstructures

ABSTRACTIndium-tin-oxide films were grown hetero-epitaxially on YSZ surface at a substrate temperature of 900 °C, and their surface microstructures were observed by using atomic force microscopy. ITO films grown on (111) surface of YSZ exhibited very high crystal quality; full width at half maximum of out-of-plane rocking curve was 54 second. The ITO was grown spirally, with flat terraces and steps corresponding to (222) plane spacing of 0.29 nm. Oxygen pressure during film growth is another key factor to obtain atomically flat surfaced ITO thin film.

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