Effect of interlayer exchange coupling parameter on switching time and critical current density in composite free layer

2014 ◽  
Vol 115 (17) ◽  
pp. 17D111 ◽  
Author(s):  
Amritpal Singh ◽  
Subhadra Gupta ◽  
Majd Kuteifan ◽  
Marko Lubarda ◽  
Vitaliy Lomakin ◽  
...  
Keyword(s):  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Exchange Coupling ◽  
Switching Time ◽  
Coupling Parameter ◽  
Interlayer Exchange Coupling ◽  
Free Layer ◽  
Interlayer Exchange

Field-free spin–orbit torque induced magnetization reversal in a composite free layer with interlayer exchange coupling

2021 ◽  
Vol 118 (13) ◽  
pp. 132402
Author(s):  
Zhou Li ◽  
Yinuo Shi ◽  
Kequn Chi ◽  
Wenbiao Zhang ◽  
Xiang Feng ◽  
...  
Keyword(s):  
Magnetization Reversal ◽  
Exchange Coupling ◽  
Spin Orbit ◽  
Interlayer Exchange Coupling ◽  
Free Layer ◽  
Interlayer Exchange

Reduction in critical current density for spin torque transfer switching with composite free layer

2008 ◽  
Vol 93 (9) ◽  
pp. 092504 ◽  
Author(s):  
Cheng-Tyng Yen ◽  
Wei-Chuan Chen ◽  
Ding-Yeong Wang ◽  
Yuan-Jen Lee ◽  
Chih-Ta Shen ◽  
...  
Keyword(s):  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Spin Torque ◽  
Free Layer ◽  
Spin Torque Transfer

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

Facet Topography and Dislocation Structure as a Possible Source for Electrical Heterogeneity in [001] TILT Bicrystals of YBa2Cu3O7-δ

1996 ◽  
Vol 54 ◽  
pp. 338-339
Author(s):  
I-Fei Tsu ◽  
D.L. Kaiser ◽  
S.E. Babcock
Keyword(s):  
Grain Boundary ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Electromagnetic Properties ◽  
Length Scale ◽  
Density Values ◽  
Current Densities ◽  
Applied Fields ◽  
A Current

A current theme in the study of the critical current density behavior of YBa2Cu3O7-δ (YBCO) grain boundaries is that their electromagnetic properties are heterogeneous on various length scales ranging from 10s of microns to ˜ 1 Å. Recently, combined electromagnetic and TEM studies on four flux-grown bicrystals have demonstrated a direct correlation between the length scale of the boundaries’ saw-tooth facet configurations and the apparent length scale of the electrical heterogeneity. In that work, enhanced critical current densities are observed at applied fields where the facet period is commensurate with the spacing of the Abrikosov flux vortices which must be pinned if higher critical current density values are recorded. To understand the microstructural origin of the flux pinning, the grain boundary topography and grain boundary dislocation (GBD) network structure of [001] tilt YBCO bicrystals were studied by TEM and HRTEM.

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