scholarly journals Lattice location and thermal stability of implanted nickel in silicon studied by on-line emission channeling

2014 ◽  
Vol 115 (2) ◽  
pp. 023504 ◽  
Author(s):  
D. J. Silva ◽  
U. Wahl ◽  
J. G. Correia ◽  
L. M. C. Pereira ◽  
L. M. Amorim ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Line Emission ◽  
Lattice Location ◽  
On Line ◽  
Thermal Stability Of ◽  
Emission Channeling

Establishment of Thermal Stability Estimation Model of the Power Battery

2012 ◽  
Vol 512-515 ◽  
pp. 1089-1094
Author(s):  
Hong Wei Wang ◽  
Hai Qing Xiao ◽  
Shuang Deng ◽  
Chao Wang
Keyword(s):  
Thermal Stability ◽  
Cusp Catastrophe ◽  
Estimation Model ◽  
Stability Estimation ◽  
Power Battery ◽  
Safety And Reliability ◽  
On Line ◽  
And Control ◽  
Cusp Catastrophe Theory ◽  
Thermal Stability Of

It is very important to monitor and estimate thermal stability of the power battery because that the thermal runaway will happen at some high temperature. Therefore, this study was focused on thermal stability estimation of the power battery thermal stability. The thermal stability estimation model consists of collect module, judge module, cusp catastrophe estimation module and control module. The important module is cusp catastrophe estimation module which was established based on cusp catastrophe theory. The experimental results show that thermal stability estimation model of the power battery works well. Therefore, thermal stability estimation model of the power battery is helpful to monitor and estimate the safety and reliability of power battery on line.

scholarly journals Lattice location and thermal stability of implanted Fe in ZnO

2004 ◽  
Vol 85 (21) ◽  
pp. 4899-4901 ◽  
Author(s):  
E. Rita ◽  
U. Wahl ◽  
J. G. Correia ◽  
E. Alves ◽  
J. C. Soares ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Lattice Location ◽  
Thermal Stability Of

Lattice Location and Cathodoluminescence Studies of Ytterbium/Thulium Implanted 2H-Aluminium Nitride

2002 ◽  
Vol 743 ◽  
Author(s):  
U. Vetter ◽  
M. F. Reid ◽  
H. Hofsäss ◽  
C. Ronning ◽  
J. Zenneck ◽  
...  
Keyword(s):  
Room Temperature ◽  
Lattice Site ◽  
Electron Transition ◽  
Lattice Location ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Annealing Temperatures ◽  
Visible Luminescence ◽  
On Line ◽  
Emission Channeling

ABSTRACTLattice location studies of radioactive 169Yb ions, implanted at an energy of 60 keV into 2H-AlN at the on-line isotope separator ISOLDE at CERN, were performed using the emission channeling technique. The measurements, which yield a substitutional Al lattice site for the implanted ions, were recorded for annealing temperatures ranging from 293 K to 1273 K. After complete decay of 169Yb to 169Tm cathodoluminescence measurements were performed in the range 12 K – 300 K. The samples show a strong visible luminescence at 460 - 470 nm at room temperature, which is attributed to the 1D2−3F4 intra-4f electron transition of Tm3+. At 12 K the luminescence is dominated by transitions starting from the 1H6 multiplet. Time resolved as well as temperature dependent cathodoluminescence measurements are presented and discussed.The lattice location as well as the time resolved cathodoluminescence measurements suggest that there is only one pronounced site of the implanted ions in the AlN lattice and that this is the substitutional aluminium site.

scholarly journals A versatile apparatus for on-line emission channeling experiments

2013 ◽  
Vol 84 (7) ◽  
pp. 073506 ◽  
Author(s):  
M. R. Silva ◽  
U. Wahl ◽  
J. G. Correia ◽  
L. M. Amorim ◽  
L. M. C. Pereira
Keyword(s):  
Line Emission ◽  
On Line ◽  
Emission Channeling

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Practical criteria for the thermal stability of a unidimensional superconductor

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Time and thermal stability of magnetic properties of amorphous Fe80TM3B17 alloys

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas
Keyword(s):  
Thermal Stability ◽  
Magnetic Properties ◽  
Thermal Stability Of
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