Polarized ion source operation at IUCF

1995 ◽  
Author(s):  
V. Derenchuk ◽  
A. Belov ◽  
R. Brown ◽  
J. Collins ◽  
J. Sowinski ◽  
...  
Keyword(s):  
2021 ◽  
pp. 65-68
Author(s):  
I. Sereda ◽  
D. Ryabchikov ◽  
Ya. Hrechko ◽  
Ie. Babenko

The influence of metal hydride hollow cathode on a Penning ion source operation has been carried out. The feature of investigation is hydrogen injection only due to its desorption from metal hydride under ion-stimulated processes. The regimes of optimal discharge operation in the hollow cathode mode are determined. It has been revealed that the transition to the hollow cathode mode occurs at lower voltages, the discharge works without external gas supply, and the working pressure in the cell is set at the level determined by the discharge current. The supply of a negative bias to the metal hydride hollow cathode weakly affects the features of the emission of axial particles, although it allows the increase of plasma density near the metal hydride hollow cathode.


2004 ◽  
Vol 75 (5) ◽  
pp. 1488-1491 ◽  
Author(s):  
P. Lehérissier ◽  
C. Barué ◽  
C. Canet ◽  
M. Dubois ◽  
M. Dupuis ◽  
...  

1998 ◽  
Vol 69 (2) ◽  
pp. 709-711 ◽  
Author(s):  
K. Tinschert ◽  
J. Bossler ◽  
S. Schennach ◽  
H. Schulte

2001 ◽  
Vol 19 (2) ◽  
pp. 673-674
Author(s):  
Robert A. Langley ◽  
Paul C. Dastoor ◽  
D. John O’Connor
Keyword(s):  

Nukleonika ◽  
2015 ◽  
Vol 60 (2) ◽  
pp. 327-330 ◽  
Author(s):  
Oleksii Girka ◽  
Alexander Bizyukov ◽  
Ivan Bizyukov ◽  
Michael Gutkin ◽  
Sergei Mishin

Abstract The paper investigates the options to increase the production yield of temperature compensated surface acoustic wave (SAW) devices with a defined range of operational frequencies. The paper focuses on the preparation of large wafers with SiO2 and AlN/Si3N4 depositions. Stability of the intermediate SiO2 layer is achieved by combining high power density UV radiation with annealing in high humidity environment. A uniform thickness of the capping AlN layer is achieved by local high-rate etching with a focused ion beam emitted by the FALCON ion source. Operation parameters and limitations of the etching process are discussed.


1996 ◽  
Vol 67 (3) ◽  
pp. 1331-1333 ◽  
Author(s):  
C. Mühle ◽  
U. Ratzinger ◽  
G. Jöst ◽  
K. Leible ◽  
S. Schennach ◽  
...  

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