Experimental characterization and self-consistent modeling of luminescence coupling effect in III-V multijunction solar cells

2013 ◽  
Vol 103 (26) ◽  
pp. 263907 ◽  
Author(s):  
Tomah Sogabe ◽  
Akio Ogura ◽  
Chao-Yu Hung ◽  
Valery Evstropov ◽  
Mikhail Mintairov ◽  
...  
Keyword(s):  
Solar Cells ◽  
Coupling Effect ◽  
Experimental Characterization ◽  
Multijunction Solar Cells ◽  
Self Consistent

Temperature dependence of wafer-bonded III-V on silicon multijunction solar cells with luminescent coupling effect

2019 ◽  
Vol 9 (01) ◽  
pp. 1 ◽  
Author(s):  
Bernice Mae F. Yu Jeco ◽  
Elias Veinberg-Vidal ◽  
Laura Vauche ◽  
Nazmul Ahsan ◽  
Yoshitaka Okada
Keyword(s):  
Solar Cells ◽  
Temperature Dependence ◽  
Coupling Effect ◽  
Multijunction Solar Cells

Luminescent coupling effect in wafer-bonded III-V on silicon multijunction solar cells

2019 ◽  
Vol 9 (01) ◽  
pp. 1 ◽  
Author(s):  
Bernice Mae F. Yu Jeco ◽  
Elias Veinberg-Vidal ◽  
Laura Vauche ◽  
Katsuhisa Yoshida ◽  
Ryo Tamaki ◽  
...  
Keyword(s):  
Solar Cells ◽  
Coupling Effect ◽  
Multijunction Solar Cells

scholarly journals Theoretical and experimental assessment of thinned germanium substrates for III–V multijunction solar cells

2020 ◽  
Vol 28 (11) ◽  
pp. 1097-1106
Author(s):  
Iván Lombardero ◽  
Mario Ochoa ◽  
Naoya Miyashita ◽  
Yoshitaka Okada ◽  
Carlos Algora
Keyword(s):  
Solar Cells ◽  
Experimental Assessment ◽  
Multijunction Solar Cells ◽  
Germanium Substrates

Growth aspects of AlGaAs/GaAs tunnel diodes for multijunction solar cells

2005 ◽  
Vol 40 (10-11) ◽  
pp. 1039-1042 ◽  
Author(s):  
G. Timò ◽  
C. Flores ◽  
R. Campesato
Keyword(s):  
Solar Cells ◽  
Tunnel Diodes ◽  
Multijunction Solar Cells

Development of germanium-on-germanium engineered substrates for III-V multijunction solar cells

2020 ◽  
Author(s):  
Guillaume Courtois ◽  
Rufi Kurstjens ◽  
Jinyoun Cho ◽  
Kristof Dessein ◽  
Ivan Garcia ◽  
...  
Keyword(s):  
Solar Cells ◽  
Multijunction Solar Cells ◽  
Engineered Substrates

scholarly journals Growth of GaP Layers on Si Substrates in a Standard MOVPE Reactor for Multijunction Solar Cells

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 398
Author(s):  
Pablo Caño ◽  
Carmen M. Ruiz ◽  
Amalia Navarro ◽  
Beatriz Galiana ◽  
Iván García ◽  
...  
Keyword(s):  
Solar Cells ◽  
Gallium Phosphide ◽  
Growth Process ◽  
Electrical Characterization ◽  
Substrate Preparation ◽  
Nucleation Layer ◽  
Si Substrates ◽  
Ideal Candidate ◽  
Multijunction Solar Cells ◽  
Multijunction Solar Cell

Gallium phosphide (GaP) is an ideal candidate to implement a III-V nucleation layer on a silicon substrate. The optimization of this nucleation has been pursued for decades, since it can form a virtual substrate to grow monolithically III-V devices. In this work we present a GaP nucleation approach using a standard MOVPE reactor with regular precursors. This design simplifies the epitaxial growth in comparison to other routines reported, making the manufacturing process converge to an industrial scale. In short, our approach intends to mimic what is done to grow multijunction solar cells on Ge by MOVPE, namely, to develop a growth process that uses a single reactor to manufacture the complete III-V structure, at common MOVPE process temperatures, using conventional precursors. Here, we present the different steps in such GaP nucleation routine, which include the substrate preparation, the nucleation itself and the creation of a p-n junction for a Si bottom cell. The morphological and structural measurements have been made with AFM, SEM, TEM and Raman spectroscopy. These results show a promising surface for subsequent III-V growth with limited roughness and high crystallographic quality. For its part, the electrical characterization reveals that the routine has also formed a p-n junction that can serve as bottom subcell for the multijunction solar cell.

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