Design optimization of high pressure and high temperature piezoresistive pressure sensor for high sensitivity

2014 ◽  
Vol 85 (1) ◽  
pp. 015001 ◽  
Author(s):  
Zhe Niu ◽  
Yulong Zhao ◽  
Bian Tian
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Design Optimization ◽  
Pressure Sensor ◽  
High Sensitivity ◽  
Piezoresistive Pressure Sensor

scholarly journals Hierarchical network enabled flexible textile pressure sensors with ultra-high sensitivity, ultra-wide linearity and high-temperature resistance

2021 ◽  
Author(s):  
Meiling Jia ◽  
Chenghan Yi ◽  
Yankun Han ◽  
Xin Li ◽  
Guoliang Xu ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Pressure Sensor ◽  
High Performance ◽  
Full Range ◽  
Pressure Sensors ◽  
Fiber Surface ◽  
High Sensitivity ◽  
Harsh Environments ◽  
Point To Point

Abstract Thin, lightweight, and flexible textile pressure sensors with the ability to precisely detect the full range of faint pressure (< 100 Pa), low pressure (in the range of KPa) and high pressure (in the range of MPa) are in significant demand to meet the requirements for applications in daily activities and more meaningfully in some harsh environments, such as high temperature and high pressure. However, it is still a major challenge to fulfill these requirements simultaneously in a single pressure sensor. Herein, a high-performance pressure sensor enabled by polyimide fiber fabric with functionalized carbon-nanotube (PI/FCNT) is obtained via a facile electrophoretic deposition (EPD) approach. High-density FCNT is evenly wrapped and chemically bonded to the fiber surface during the EPD process, forming a conductive hierarchical fiber/FCNT matrix. Benefiting from the abundant yet firm contacting points, point-to-point contacting mode, and high elastic modulus of both PI and CNT, the proposed PI/FCNT pressure sensor exhibits ultra-high sensitivity (3.57 MPa− 1), ultra-wide linearity (3.24 MPa), exceptionally broad sensing range (~ 45 MPa), and long-term stability (> 4000 cycles). Furthermore, under a high working temperature of 200 ºC, the proposed sensor device still shows an ultra-high sensitivity of 2.64 MPa− 1 within a wide linear range of 7.2 MPa, attributing to its intrinsic high-temperature-resistant properties of PI and CNT. Thanks to these merits, the proposed PI/FCNT(EPD) pressure sensor could serve as an E-skin device to monitor the human physiological information, precisely detect tiny and extremely high pressure, and can be integrated into an intelligent mechanical hand to detect the contact force under high-temperature (> 300 ºC), endowing it with high applicability in the fields of real-time health monitoring, intelligent robots, and harsh environments.

Study and Analysis of MEMS Pressure Sensor Based on Applied Mechanics

2013 ◽  
Vol 771 ◽  
pp. 159-162
Author(s):  
Li Feng Qi ◽  
Zhi Min Liu ◽  
Xing Ye Xu ◽  
Guan Zhong Chen ◽  
Xue Qing
Keyword(s):  
Finite Element Analysis ◽  
Pressure Sensor ◽  
High Sensitivity ◽  
Scientific Basis ◽  
Sensor Chip ◽  
Applied Mechanics ◽  
Beam Structure ◽  
Element Analysis ◽  
Sensor Development ◽  
Piezoresistive Pressure Sensor

The relative research of low range and high anti-overload piezoresistive pressure sensor is carried out in this paper and a new kind of sensor chip structure, the double ends-four beam structure, is proposed. Trough the analysis, the sensor chip structure designed in this paper has high sensitivity and linearity. The chip structure is specially suit for the micro-pressure sensor. The theoretical analysis and finite element analysis is taken in this paper, which provide important scientific basis for the pressure sensor development.

scholarly journals Design Optimization and Fabrication of a Novel Structural SOI Piezoresistive Pressure Sensor with High Accuracy

Sensors ◽  
2018 ◽  
Vol 18 (2) ◽  
pp. 439 ◽  
Author(s):  
Chuang Li ◽  
Francisco Cordovilla ◽  
R. Jagdheesh ◽  
José Ocaña
Keyword(s):  
Design Optimization ◽  
Pressure Sensor ◽  
High Accuracy ◽  
Piezoresistive Pressure Sensor

Modeling and Simulation of the Thermal Drift Characteristics of the Piezoresistive Pressure Sensor

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000373-000378
Author(s):  
R. Otmani ◽  
N. Benmoussa ◽  
K. Ghaffour
Keyword(s):  
Thermal Behavior ◽  
Modeling And Simulation ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Thermal Drift ◽  
Piezoresistive Pressure Sensor ◽  
Output Characteristics ◽  
Piezoresistive Pressure Sensors

Piezoresistive pressure sensors based on Silicon have a large thermal drift because of their high sensitivity to temperature (ten times more sensitive to temperature than metals). So the study of the thermal behavior of these sensors is essential to define the parameters that cause the drift of the output characteristics. In this study, we adopted the behavior of 2nd degree gauges depending on the temperature. Then we model the thermal behavior of the sensor and its characteristics.

scholarly journals Nano Carbon Black-Based High Performance Wearable Pressure Sensors

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 664 ◽  
Author(s):  
Junsong Hu ◽  
Junsheng Yu ◽  
Ying Li ◽  
Xiaoqing Liao ◽  
Xingwu Yan ◽  
...  
Keyword(s):  
Carbon Black ◽  
Pressure Sensor ◽  
High Performance ◽  
Large Scale ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Wearable Electronics ◽  
Atmospheric Pollutant ◽  
Piezoresistive Pressure Sensor ◽  
Nano Carbon

The reasonable design pattern of flexible pressure sensors with excellent performance and prominent features including high sensitivity and a relatively wide workable linear range has attracted significant attention owing to their potential application in the advanced wearable electronics and artificial intelligence fields. Herein, nano carbon black from kerosene soot, an atmospheric pollutant generated during the insufficient burning of hydrocarbon fuels, was utilized as the conductive material with a bottom interdigitated textile electrode screen printed using silver paste to construct a piezoresistive pressure sensor with prominent performance. Owing to the distinct loose porous structure, the lumpy surface roughness of the fabric electrodes, and the softness of polydimethylsiloxane, the piezoresistive pressure sensor exhibited superior detection performance, including high sensitivity (31.63 kPa−1 within the range of 0–2 kPa), a relatively large feasible range (0–15 kPa), a low detection limit (2.26 pa), and a rapid response time (15 ms). Thus, these sensors act as outstanding candidates for detecting the human physiological signal and large-scale limb movement, showing their broad range of application prospects in the advanced wearable electronics field.

Design and Optimization of a Highly Sensitive and Linearity Piezoresistive Pressure Sensor Based on a Combination of Cross Beam-Peninsula-Membrane Structure

2017 ◽  
Author(s):  
Tran Anh Vang ◽  
Xianmin Zhang ◽  
Benliang Zhu
Keyword(s):  
Pressure Sensor ◽  
Pressure Sensors ◽  
Single Crystal Silicon ◽  
High Sensitivity ◽  
Crystal Silicon ◽  
Nonlinearity Error ◽  
Trade Off ◽  
Design And Optimization ◽  
Piezoresistive Pressure Sensor ◽  
Piezoresistive Pressure Sensors

The sensitivity and linearity trade-off problem has become the hotly important issues in designing the piezoresistive pressure sensors. To solve these trade-off problems, this paper presents the design, optimization, fabrication, and experiment of a novel piezoresistive pressure sensor for micro pressure measurement based on a combined cross beam - membrane and peninsula (CBMP) structure diaphragm. Through using finite element method (FEM), the proposed sensor performances as well as comparisons with other sensor structures are simulated and analyzed. Compared with the cross beam-membrane (CBM) structure, the sensitivity of CBMP structure sensor is increased about 38.7 % and nonlinearity error is reduced nearly 8%. In comparison with the peninsula structure, the maximum non-linearity error of CBMP sensor is decreased about 40% and the maximum deflection is extremely reduced 73%. Besides, the proposed sensor fabrication is performed on the n-type single crystal silicon wafer. The experimental results of the fabricated sensor with CBMP membrane has a high sensitivity of 23.4 mV/kPa and a low non-linearity of −0.53% FSS in the pressure range 0–10 kPa at the room temperature. According to the excellent performance, the sensor can be applied to measure micro-pressure lower than 10 kPa.

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