scholarly journals Detailed photoluminescence studies of thin film Cu2S for determination of quasi-Fermi level splitting and defect levels

2013 ◽  
Vol 114 (23) ◽  
pp. 233506 ◽  
Author(s):  
H. Sträter ◽  
R. Brüggemann ◽  
S. Siol ◽  
A. Klein ◽  
W. Jaegermann ◽  
...  
Keyword(s):  
Thin Film ◽  
Fermi Level ◽  
Quasi Fermi Level ◽  
Level Splitting ◽  
Defect Levels ◽  
Photoluminescence Studies

Direct quantification of quasi-Fermi level splitting in organic thin film devices

2021 ◽  
Author(s):  
Drew B. Riley ◽  
Oskar J. Sandberg ◽  
Nora M. Wilson ◽  
Wei Li ◽  
Stefan Zeiske ◽  
...  
Keyword(s):  
Thin Film ◽  
Fermi Level ◽  
Organic Thin Film ◽  
Quasi Fermi Level ◽  
Level Splitting ◽  
Thin Film Devices ◽  
Direct Quantification

scholarly journals On the Relation between the Open‐Circuit Voltage and Quasi‐Fermi Level Splitting in Efficient Perovskite Solar Cells

2019 ◽  
Vol 9 (33) ◽  
pp. 1901631 ◽  
Author(s):  
Pietro Caprioglio ◽  
Martin Stolterfoht ◽  
Christian M. Wolff ◽  
Thomas Unold ◽  
Bernd Rech ◽  
...  
Keyword(s):  
Solar Cells ◽  
Fermi Level ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Open Circuit ◽  
Quasi Fermi Level ◽  
Level Splitting

scholarly journals Ion Movement Explains Huge V OC Increase despite Almost Unchanged Internal Quasi‐Fermi‐Level Splitting in Planar Perovskite Solar Cells

2021 ◽  
pp. 2001104
Author(s):  
Jan Herterich ◽  
Moritz Unmüssig ◽  
Georgios Loukeris ◽  
Markus Kohlstädt ◽  
Uli Würfel
Keyword(s):  
Solar Cells ◽  
Fermi Level ◽  
Perovskite Solar Cells ◽  
Ion Movement ◽  
Quasi Fermi Level ◽  
Level Splitting

Identification of Defect Levels in Copper Indium Diselenide (CuInSe2) Thin Films via Photoluminescence Studies

MRS Advances ◽  
2018 ◽  
Vol 3 (52) ◽  
pp. 3135-3141 ◽  
Author(s):  
Niraj Shrestha ◽  
Dhurba R. Sapkota ◽  
Kamala K. Subedi ◽  
Puja Pradhan ◽  
Prakash Koirala ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Intensity ◽  
Copper Indium Diselenide ◽  
Defect States ◽  
Phonon Replica ◽  
Shallow Acceptor ◽  
Copper Indium ◽  
Defect Levels ◽  
Photoluminescence Studies ◽  
In Cis

Photoluminescence (PL) spectroscopy has been used to study the defect levels in thin film copper indium diselenide (CuInSe2, CIS) which we are developing as the absorber layer for the bottom cell of a monolithically grown perovskite/CuInSe2 tandem solar cell. Temperature and laser power dependent PL measurements of thin film CIS for two different Cu/In ratios (0.66 and 0.80) have been performed. The CIS film with Cu/In = 0.80 shows a prominent donor-to-acceptor peak (DAP) involving a shallow acceptor of binding energy ∼22 meV, with phonon replica at ∼32 meV spacing. In contrast, PL measurement of CIS film for Cu/In = 0.66 taken at 20 K exhibited an asymmetric and broad PL spectrum with peaks at 0.845 eV and 0.787 eV. Laser intensity dependent PL revealed that the observed peaks 0.845 eV and 0.787 eV shift towards higher energy (aka j-shift) at ∼11.7 meV/decade and ∼ 8 meV/decade with increase in laser intensity respectively. The asymmetric and broad spectrum together with large j-shift suggests that the observed peaks at 0.845 eV and 0.787 eV were related to band-to-tail (BT) and band-to-impurity (BI) transition, respectively. Such a band-tail-related transition originates from the potential fluctuation of defect states at low temperature. The appearance of band related transition in CIS film with Cu/In = 0.66 is the indicator of the presence of large number of charged defect states.

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