Photon induced Schottky barrier effects in inverse-extraordinary optoconductance structures

2013 ◽  
Author(s):  
L. Tran ◽  
S. A. Solin ◽  
A. Gilbertson ◽  
L. F. Cohen
Keyword(s):  
Schottky Barrier ◽  
Barrier Effects

scholarly journals On the Reliability of Accelerated Testing in AIGaAs/InGaAs/GaAs PHEMTs

2002 ◽  
Vol 26 (2) ◽  
pp. 115-127 ◽  
Author(s):  
K. F. Yarn ◽  
W. C. Chien ◽  
C. S. Wang
Keyword(s):  
Schottky Barrier ◽  
Accelerated Testing ◽  
Hot Electron ◽  
Degradation Mechanisms ◽  
Temperature Dependent ◽  
Barrier Effects

The study of different stress on device characteristics of AlGaAs/InGaAs/GaAs PHEMTs has been researched and developed in this report. Many catastrophic degradation mechanisms such as hot-electron, gate-drain breakdown,IDS,IG,VPand gate Schottky barrier effects are discussed in detail. In addition, the accelerated testing of the temperature-dependent effects onID,Gmand Schottky barrier are examined.

Schottky barrier effects on the electrical properties of the BiNbO2Bi system

1979 ◽  
Vol 56 (1) ◽  
pp. 379-386 ◽  
Author(s):  
B. Lalevic ◽  
M. Gvishi ◽  
M. Shoga
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Barrier Effects

Gallium Oxide Schottky Barrier Diodes

2016 ◽  
Vol 136 (4) ◽  
pp. 479-483
Author(s):  
Masataka Higashiwaki ◽  
Kohei Sasaki ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Akito Kuramata
Keyword(s):  
Schottky Barrier ◽  
Gallium Oxide ◽  
Schottky Barrier Diodes

Functional Gradient Transparent Conducting Oxide Nanowire Arrays as Monophasic Schottky-Barrier Free Memristors for Bipolar Linear Switching

2020 ◽  
Author(s):  
Thomas Herzog ◽  
Naomi Weitzel ◽  
Sebastian Polarz
Keyword(s):  
Schottky Barrier ◽  
Data Storage ◽  
Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Electrical Potential ◽  
High Resistance State ◽  
Nanowire Arrays ◽  
Metal Metal ◽  
Resistance State ◽  
Barrier Free

<div><div><div><p>One of the fascinating properties of metal-semiconductor Schottky-barriers, which has been observed for some material combinations, is memristive behavior. Memristors are smart, since they can reversibly switch between a low resistance state and a high resistance state. The devices offer a great potential for advanced computing and data storage, including neuromorphic networks and resistive random-access memory. However, as for many other cases, the presence of a real interface (metal - metal oxide) has numerous disadvantages. The realization of interface-free, respectively Schottky-barrier free memristors is highly desirable. The aim of the current paper is the generation of nanowire arrays with each nanorod possessing the same crystal phase (Rutile) and segments only differing in composition. The electric conductivity is realized by segments made of highly-doped antimony tin oxide (ATO) transitioning into pure tin oxide (TO). Complex nanoarchitectures are presented, which include ATO-TO, ATO-TO-ATO nanowires either with a stepwise distribution of antimony or as a graded functional material. The electrical characterization of the materials reveals that the introduction of memristive properties in such structures is possible. The special features observed in voltage-current (IV) curves are correlated to the behavior of mobile oxygen vacancies (VO..) at different values of applied electrical potential.</p></div></div></div>

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