High resolution InSb quantum well ballistic nanosensors for room temperature applications

2013 ◽  
Author(s):  
Adam Gilbertson ◽  
C. J. Lambert ◽  
S. A. Solin ◽  
L. F. Cohen
Keyword(s):  
High Resolution ◽  
Quantum Well ◽  
Room Temperature ◽  
Temperature Applications

Photoemission Studies of the Initial Adsorption and Growth of Ag on Ge(111)

1987 ◽  
Vol 94 ◽  
Author(s):  
A. L. Wachs ◽  
T. Miller ◽  
A. P. Shapiro ◽  
T. -C. Chiang
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Quantum Well ◽  
Film Thickness ◽  
Structural Properties ◽  
Room Temperature ◽  
Substrate Surface ◽  
Initial Adsorption ◽  
And Behavior ◽  
Quantum Well States

ABSTRACTWe present electron diffraction, and high-resolution angle-resolved and angle-integrated photoemission studies of the initial phases of adsorption and growth of Ag on Ge(111). The results provide information on the structural properties of the Ge(111)-c(2×8) substrate surface, show Ag grows upon it almost laminarly at room temperature, and unambiguously demonstrate the presence of a small amount of Ge segregating on top of the growing Ag overlayer. The origins and behavior of these segregated atoms are discussed. Ag films more than a few monolayers thick exhibit quantum well states which are observed to evolve as a function of film thickness.

A Liquid Nitrogen Cooled Stage for STEM

1974 ◽  
Vol 32 ◽  
pp. 444-445
Author(s):  
Louis T. Germinario
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Liquid Nitrogen ◽  
Room Temperature ◽  
Objective Lens ◽  
Thermal Drift ◽  
Specimen Holder ◽  
Resolution Capability ◽  
Focal Position

A liquid nitrogen stage has been developed for the JEOL JEM-100B electron microscope equipped with a scanning attachment. The design is a modification of the standard JEM-100B SEM specimen holder with specimen cooling to any temperatures In the range ~ 55°K to room temperature. Since the specimen plane is maintained at the ‘high resolution’ focal position of the objective lens and ‘bumping’ and thermal drift la minimized by supercooling the liquid nitrogen, the high resolution capability of the microscope is maintained (Fig.4).

High-Resolution Scanning Electron Microscopy of Biological Specimens

1988 ◽  
Vol 46 ◽  
pp. 186-187
Author(s):  
M. Müller ◽  
R. Hermann
Keyword(s):  
High Resolution ◽  
Freeze Drying ◽  
Room Temperature ◽  
Structural Information ◽  
Freeze Substitution ◽  
Critical Point Drying ◽  
Sem Study ◽  
Major Factors ◽  
Structural Preservation ◽  
Preparation Techniques

Three major factors must be concomitantly assessed in order to extract relevant structural information from the surface of biological material at high resolution (2-3nm).Procedures based on chemical fixation and dehydration in graded solvent series seem inappropriate when aiming for TEM-like resolution. Cells inevitably shrink up to 30-70% of their initial volume during gehydration; important surface components e.g. glycoproteins may be lost. These problems may be circumvented by preparation techniques based on cryofixation. Freezedrying and freeze-substitution followed by critical point drying yields improved structural preservation in TEM. An appropriate preservation of dimensional integrity may be achieved by freeze-drying at - 85° C. The sample shrinks and may partially collapse as it is warmed to room temperature for subsequent SEM study. Observations at low temperatures are therefore a necessary prerequisite for high fidelity SEM. Compromises however have been unavoidable up until now. Aldehyde prefixation is frequently needed prior to freeze drying, rendering the sample resistant to treatment with distilled water.

scholarly journals Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μm at room temperature

2021 ◽  
Vol 118 (22) ◽  
pp. 221103
Author(s):  
P. Schmiedeke ◽  
A. Thurn ◽  
S. Matich ◽  
M. Döblinger ◽  
J. J. Finley ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Threshold Strain ◽  
Low Threshold ◽  
Nanowire Lasers ◽  
Multi Quantum Well

Transition Insulator-Metal and Antiferromagnetic-Paramagnetic Cu Doped in La0.47Ca0.53MnO3

2015 ◽  
Vol 1123 ◽  
pp. 73-77 ◽  
Author(s):  
Yohanes Edi Gunanto ◽  
K. Sinaga ◽  
B. Kurniawan ◽  
S. Poertadji ◽  
H. Tanaka ◽  
...  
Keyword(s):  
High Resolution ◽  
Low Temperature ◽  
Magnetic Structure ◽  
Room Temperature ◽  
Paramagnetic Phase ◽  
Perovskite Manganites ◽  
Antiferromagnetic Phase ◽  
Temperature Transition ◽  
Cu Doping ◽  
Metal State

The study of the perovskite manganites La0.47Ca0.53Mn1-xCuxO3 with x = 0, 0.06, 0.09, and 0.13 has been done. The magnetic structure was determined using high-resolution neutron scattering at room temperature and low temperature. All samples were paramagnetic at room temperature and antiferromagnetic at low temperature. Using the SQUID Quantum Design, the samples showed that the doping of the insulating antiferromagnetic phase La0.47Ca0.53MnO3 with Cu doping resulted in the temperature transition from an insulator to metal state, and an antiferromagnetic to paramagnetic phase. The temperature transition from an insulator to metal state ranged from 23 to 100 K and from 200 to 230 K for the transition from an antiferromagnetic to paramagnetic phase.

Electroabsorption by Stark effect on room‐temperature excitons in GaAs/GaAlAs multiple quantum well structures

1983 ◽  
Vol 42 (10) ◽  
pp. 864-866 ◽  
Author(s):  
D. S. Chemla ◽  
T. C. Damen ◽  
D. A. B. Miller ◽  
A. C. Gossard ◽  
W. Wiegmann
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Stark Effect ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

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