Electron transfer at the contact between Al electrode and gold nanoparticles of polymer: Nanoparticle resistive switching devices studied by alternating current impedance spectroscopy

2013 ◽  
Vol 103 (23) ◽  
pp. 233508 ◽  
Author(s):  
Jianyong Ouyang
Keyword(s):  
Gold Nanoparticles ◽  
Electron Transfer ◽  
Impedance Spectroscopy ◽  
Resistive Switching ◽  
Alternating Current ◽  
Polymer Nanoparticle ◽  
Switching Devices

Electrochemical impedance spectroscopy study of electron transfer at poly(3,4-ethylenedioxythiophene) containing gold nanoparticles coating

2011 ◽  
Vol 76 (12) ◽  
pp. 1433-1445
Author(s):  
Stelian Lupu
Keyword(s):  
Gold Nanoparticles ◽  
Electron Transfer ◽  
Electrochemical Impedance Spectroscopy ◽  
Impedance Spectroscopy ◽  
Au Nanoparticles ◽  
Electrochemical Impedance ◽  
Electrochemical Polymerization ◽  
Composite Coatings ◽  
Supporting Electrolyte ◽  
Transfer Resistance

Electrochemical impedance spectroscopy (EIS) was used for characterization of electron transfer in various redox probes, such as the redox couple ferrocyanide-ferricyanide, ferrocene, ferrocenemethanol, and the poly(3,4-ethylenedioxythiophene) (PEDOT) conducting polymer containing gold nanoparticles. The PEDOT coating was deposited onto platinum (Pt) and glassy carbon (GC) electrodes by galvanostatic electrochemical polymerization from an aqueous solution containing 10–2 M EDOT and 10–1 M LiClO4 as supporting electrolyte. The PEDOT-Au nanoparticles composite coating was prepared by droplet deposition of Au nanoparticles on top of the Pt/PEDOT and GC/PEDOT modified electrodes. The pure PEDOT and PEDOT-Au nanoparticles composite coatings were investigated using EIS and cyclic voltammetry (CV) in 10–1 M LiClO4 solution containing various redox probes. The impedance spectra were recorded at the formal redox potential of the redox probes. The charge transfer resistance (Rct), solution resistance (Rs), exchange current density (i0), standard rate constant (k0), and double-layer capacitance (Cdl) were calculated from the EIS data.

scholarly journals Resistance state evolution under constant electric stress on a MoS2 non-volatile resistive switching device

RSC Advances ◽  
2020 ◽  
Vol 10 (69) ◽  
pp. 42249-42255
Author(s):  
Xiaohan Wu ◽  
Ruijing Ge ◽  
Yifu Huang ◽  
Deji Akinwande ◽  
Jack C. Lee
Keyword(s):  
Resistive Switching ◽  
Constant Voltage ◽  
Switching Device ◽  
Current Stress ◽  
Electric Stress ◽  
State Evolution ◽  
Conductive Bridge ◽  
Resistance State ◽  
Switching Devices

Constant voltage and current stress were applied on MoS2 resistive switching devices, showing unique behaviors explained by a modified conductive-bridge-like model.

scholarly journals Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sera Kwon ◽  
Min-Jung Kim ◽  
Kwun-Bum Chung
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Sio2 Nanoparticles ◽  
Visible Range ◽  
Resistive State ◽  
Switching Device ◽  
Structural Density ◽  
Multi Level ◽  
Switching Characteristics ◽  
Switching Devices

AbstractTiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.

scholarly journals Tin-selenide as a futuristic material: properties and applications

RSC Advances ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 6477-6503 ◽  
Author(s):  
Manoj Kumar ◽  
Sanju Rani ◽  
Yogesh Singh ◽  
Kuldeep Singh Gour ◽  
Vidya Nand Singh
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Resistive Switching ◽  
Gas Sensors ◽  
Material Properties ◽  
Topological Insulators ◽  
Memory Devices ◽  
Tin Selenide ◽  
Switching Devices

SnSe/SnSe2 has diverse applications like solar cells, photodetectors, memory devices, Li and Na-ion batteries, gas sensors, photocatalysis, supercapacitors, topological insulators, resistive switching devices due to its optimal band gap.

Photo-Induced Multiple-State Memory Behaviour in Non-Volatile Bipolar Resistive-Switching Devices

2018 ◽  
Vol 18 (4) ◽  
pp. 2650-2656 ◽  
Author(s):  
Xuejiao Zhang ◽  
Zhiwei Xu ◽  
Bai Sun ◽  
Jianjun Liu ◽  
Yanyan Cao ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Multiple State ◽  
Switching Devices

Local heating-induced plastic deformation in resistive switching devices

2011 ◽  
Vol 110 (5) ◽  
pp. 054514 ◽  
Author(s):  
W. Jiang ◽  
R. J. Kamaladasa ◽  
Y. M. Lu ◽  
A. Vicari ◽  
R. Berechman ◽  
...  
Keyword(s):  
Plastic Deformation ◽  
Resistive Switching ◽  
Local Heating ◽  
Switching Devices

Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes

2021 ◽  
Author(s):  
C. Santa Cruz Gonzalez ◽  
B. Sahelices ◽  
J. Jimenez ◽  
O. G. Ossorio ◽  
H. Castan ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Devices
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