Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids

2013 ◽  
Vol 114 (20) ◽  
pp. 204503 ◽  
Author(s):  
J. Y. Fang ◽  
G. Y. Lee ◽  
J. I. Chyi ◽  
C. P. Hsu ◽  
Y. W. Kang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Current Noise ◽  
High Electron ◽  
Polar Liquids ◽  
High Electron Mobility

scholarly journals InAlAs/InGaAs/InP HEMTs с композитным каналом и улучшенными пробивными характеристиками

2019 ◽  
Vol 45 (21) ◽  
pp. 29
Author(s):  
Н.А Малеев ◽  
А.П. Васильев ◽  
А.Г. Кузьменков ◽  
М.А. Бобров ◽  
М.М. Кулагина ◽  
...  
Keyword(s):  
Current Density ◽  
Electron Mobility ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Device Fabrication ◽  
Fabrication Process ◽  
Channel Structure ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility

High-electron mobility transistor (HEMT) with improved breakdown characteristics has been developed. Composite InGaAs channel structure was used in combination with fully selective double recess device fabrication process. HEMTs with T-gate length of 120 nm and width 4x30 m demonstrate maximum extrinsic transconductance of 810 mS/mm, maximum drain current density of 460 mA/mm and gate-drain reverse breakdown voltages as high as 8–10 V. Devices cut-off frequency exceed 115 GHz. Because of increased breakdown voltage and fully selective double recess fabrication process designed HEMTs are promising for medium power mm-wave MMIC amplifiers.

Comparative Investigation of AlGaN/AlN/GaN High Electron Mobility Transistors with Pd/GaN and Pd/Al2O3/GaN Gate Structures

2021 ◽  
Vol 13 (2) ◽  
pp. 289-293
Author(s):  
Jung-Hui Tsai ◽  
Jing-Shiuan Niu ◽  
Xin-Yi Huang ◽  
Wen-Chau Liu
Keyword(s):  
Electron Mobility ◽  
Gate Dielectric ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Comparative Investigation ◽  
Oxide Semiconductor ◽  
High Electron ◽  
High Electron Mobility ◽  
Radio Frequency Sputtering ◽  
Transistor Mos

In this article, the electrical characteristics of Al0.28Ga0.72 N/AlN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 20-nm-thick Al2O3 layer by using radio-frequency sputtering as the gate dielectric layer are compared to the conventional metal-semiconductor HEMT (MS-HEMT) with Pd/GaN gate structure. For the insertion of the Al2O3 layer, the energy band near the AlN/GaN heterojunction is lifted slightly up and the 2DEG at the heterojunction is reduced to shift the threshold voltage to the right side. Experimental results exhibits that though the maximum drain current decreases about 6.5%, the maximum transconductance increases of 9%, and the gate leakage current significantly reduces about five orders of magnitude for the MOS-HEMT than the MS-HEMT.

scholarly journals Cryogenic GaAs high-electron-mobility-transistor amplifier for current noise measurements

2021 ◽  
Vol 92 (2) ◽  
pp. 023910
Author(s):  
Sanghyun Lee ◽  
Masayuki Hashisaka ◽  
Takafumi Akiho ◽  
Kensuke Kobayashi ◽  
Koji Muraki
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Current Noise ◽  
High Electron ◽  
High Electron Mobility ◽  
Transistor Amplifier ◽  
Noise Measurements

Design and Research on a Novel NEMS Accelerated Sensor Based on GaAs PHEMT

2010 ◽  
Vol 97-101 ◽  
pp. 4221-4224
Author(s):  
Bin Zhen Zhang ◽  
Xiao Juan Jia ◽  
Jun Liu ◽  
Chen Yang Xue ◽  
Ting Ting Hou
Keyword(s):  
Electron Mobility ◽  
Sensitive Element ◽  
High Sensitivity ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Main Process ◽  
High Electron ◽  
Micro Machining ◽  
High Electron Mobility ◽  
Saturation Region

A novel nano electro mechanical system (NEMS) accelerated sensor which is based on piezo-resistive effect of GaAs/AlGaAs/InGaAs Pseudomorph-High Electron Mobility Transistor (PHEMT) has been designed and fabricated. The structures of sensor and sensitive element are described in this paper. The main process of Micro-machining is introduced in the text. The static press test has been performed and the testing results show that the NEMS accelerated sensor could sense exterior stress well. Then, a testing circuit is designed to detect the change of drain current under pressure. Through the vibration experiments of the sensor, the sensitivity has been discussed and given out. The conclusion that the sensitivity is maximizing in the saturation region can be got. And the measurement result shows that the sensor has good linearity and high sensitivity with 0.177mV/g in the saturation region.

scholarly journals Thermal Management of GaN-on-Si High Electron Mobility Transistor by Copper Filled Micro-Trench Structure

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Srikant Kumar Mohanty ◽  
Yu-Yan Chen ◽  
Ping-Hung Yeh ◽  
Ray-Hua Horng
Keyword(s):  
Thermal Management ◽  
Electron Mobility ◽  
Heat Dissipation ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Heating Effect ◽  
High Electron Mobility ◽  
Self Heating ◽  
Trench Structure

AbstractSelf-heating effect is a major limitation in achieving the full performance potential of high power GaN power devices. In this work, we reported a micro-trench structure fabricated on the silicon substrate of an AlGaN/GaN high electron mobility transistor (HEMT) via deep reactive ion etching, which was subsequently filled with high thermal conductive material, copper using the electroplating process. From the current-voltage characteristics, the saturation drain current was improved by approximately 17% with the copper filled micro-trench structure due to efficient heat dissipation. The IDS difference between the pulse and DC bias measurement was about 21% at high bias VDS due to the self-heating effect. In contrast, the difference was reduced to approximately 8% for the devices with the implementation of the proposed structure. Using Micro-Raman thermometry, we showed that temperature near the drain edge of the channel can be lowered by approximately ~22 °C in a HEMT operating at ~10.6 Wmm−1 after the implementation of the trench structure. An effective method for the improvement of thermal management to enhance the performance of GaN-on-Silicon HEMTs was demonstrated.

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