Particle-In-Cell simulation of laser photodetachment in capacitively coupled radio frequency oxygen discharges

2013 ◽  
Vol 20 (11) ◽  
pp. 113509 ◽  
Author(s):  
T. Teichmann ◽  
C. Küllig ◽  
K. Dittmann ◽  
K. Matyash ◽  
R. Schneider ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Capacitively Coupled ◽  
Particle In Cell ◽  
Cell Simulation

scholarly journals Spatial Temperature Profile in a Magnetised Capacitively Coupled Discharge

2018 ◽  
Vol 16 (6) ◽  
pp. 385-390
Author(s):  
Shikha BINWAL ◽  
Jay K JOSHI ◽  
Shantanu Kumar KARKARI ◽  
Predhiman Krishan KAW ◽  
Lekha NAIR ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electron Temperature ◽  
Temperature Profile ◽  
Transverse Magnetic ◽  
Capacitively Coupled ◽  
Particle In Cell ◽  
Cell Simulation ◽  
Higher Temperature ◽  
The Magnetic Field ◽  
Emissive Probe

A floating emissive probe has been used to obtain the spatial electron temperature (Te) profile in a 13.56 MHz parallel plate capacitive coupled plasma. The effect of an external transverse magnetic field and pressure on the electron temperature profile has been discussed. In the un-magnetised case, the bulk region of the plasma has a uniform Te. Upon application of the magnetic field, the Te profile becomes non-uniform and skewed.  With increase in pressure, there is an overall reduction in electron temperature. The regions adjacent to the electrodes witnessed a higher temperature than the bulk for both cases. The emissive probe results have also been compared with particle-in-cell simulation results for the un-magnetised case.

Modeling of a Plasma Etcher for Charging Free Processing of Nanoscale Structures

2006 ◽  
Vol 518 ◽  
pp. 57-62 ◽  
Author(s):  
M. Radmilović-Radjenović ◽  
Aleksandra Nina ◽  
A. Strinić ◽  
V. Stojanović ◽  
Željka Nikitović ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Gas Phase ◽  
Surface Interactions ◽  
Ion Beams ◽  
Plasma Process ◽  
Capacitively Coupled ◽  
Nanoscale Structures ◽  
Particle In Cell ◽  
Cell Simulation ◽  
Neutral Beam Etching

Neutral beam etching is proposed as a candidate for reducing plasma-process-induced damage in nanoscale devices. In this paper, neutralization of ion beams due to both gas phase collisions and ion surface interactions based on a PIC (Particle in Cell) simulation of realistic Capacitively Coupled Plasma is presented. It was found that a satisfactory degree of neutralization might be achieved by a combined effect of charge transfer and surface collisions.

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