In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

2013 ◽  
Vol 103 (19) ◽  
pp. 192109 ◽  
Author(s):  
S. R. Sarath Kumar ◽  
Pradipta K. Nayak ◽  
M. N. Hedhili ◽  
M. A. Khan ◽  
H. N. Alshareef
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
In Situ Growth

Role of the oxygen plasma during in situ growth of YBa2Cu3O6+x thin films by pulsed laser deposition

1998 ◽  
Vol 307 (3-4) ◽  
pp. 298-306 ◽  
Author(s):  
J. Garcı́a López ◽  
D.H.A. Blank ◽  
H. Rogalla ◽  
J. Siejka
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Plasma ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
In Situ Growth

scholarly journals In-situ growth of superconducting SmO1−xFxFeAs thin films by pulsed laser deposition

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Silvia Haindl ◽  
Kota Hanzawa ◽  
Hikaru Sato ◽  
Hidenori Hiramatsu ◽  
Hideo Hosono
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
In Situ Growth

Luminescent Characteristics of Pulsed Laser Deposited Epitaxial Eu-Doped Y2O3 Films

1999 ◽  
Vol 574 ◽  
Author(s):  
D. Kumar ◽  
K. G. Cho ◽  
Zhang Chen ◽  
V. Craciun ◽  
P. H. Holloway ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Yttrium Oxide ◽  
Lattice Mismatch ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Deposition Parameters

AbstractThe growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (Eu:Y2O3) thin films are reported. The Eu:Y2O3 films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O3 films can grow epitaxially on (100) LaAlO3 substrates under optimized deposition parameters. The epitaxial growth of Eu:Y2O3 films on LaAlO3, which has a lattice mismatch of ∼ 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2O3 films with an intense CL emission at 611 nm.

Pulsed Laser Deposition of High-Quality Manganite Thin Films at Low Background Pressures with in-situ Reflection High Energy Electron Diffraction

2019 ◽  
Vol 3 (9) ◽  
pp. 55-63 ◽  
Author(s):  
Antonello Tebano ◽  
Carmela Aruta ◽  
Pier Gianni Medaglia ◽  
Giuseppe Balestrino ◽  
Norberto G. Boggio ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
High Energy Electron ◽  
High Quality ◽  
Low Background

Microwave Phase Shifters: Epitaxial Growth by Pulsed Laser Deposition of Dielectric Ba0.5Sr0.5TiO3 Thin Films on MgO

2005 ◽  
Vol 902 ◽  
Author(s):  
YauYau Tse ◽  
P. S. Suherman ◽  
T. J. Jackson ◽  
I. P. Jones
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Strain Relaxation ◽  
Pulsed Laser ◽  
Phase Shifters ◽  
Laser Deposition ◽  
Ex Situ ◽  
Misfit Dislocations ◽  
Epitaxial Relationship

AbstractBa0.5Sr0.5TiO3 (BSTO) thin films were grown on (001) MgO using pulsed-laser deposition (PLD). The microstructures of in-situ and ex-situ annealed BSTO films were studied by X-ray diffraction and transmission electron microscopy (TEM). The films showed a cube on cube epitaxial relationship with <100> BSTO // <100> MgO. They were essentially single crystals with a columnar structure and possessed smooth surfaces. The interfaces of the BSTO films and substrates were atomically sharp, with misfit dislocations. Better crystallinity and full strain relaxation was obtained in films grown in 10-1 mbar oxygen and annealed ex-situ. A 30% increase in dielectric tuneability was achieved compared with in-situ annealing and deposition at 10-4 mbar. Threading dislocations are the dominant defects in the films grown in 10-1 mbar oxygen and annealed ex-situ, while the films with in-situ annealing show columnar structures with low angle boundaries.

Substrate Effects in In-Situ Growth of Perovskites by Pulsed Laser Deposition

1991 ◽  
Vol 243 ◽  
Author(s):  
K. F. Etzold ◽  
R. A. Roy ◽  
K. L. Saenger
Keyword(s):  
Pulsed Laser Deposition ◽  
Lead Zirconate Titanate ◽  
Elevated Temperatures ◽  
Pulsed Laser ◽  
Interface Layer ◽  
Dielectric Constants ◽  
Laser Deposition ◽  
In Situ Growth ◽  
Substrate Dependence

AbstractIn this study we report on in-situ growth of lead zirconate titanate (PbZr1-xTixO3, PZT) and strontium titanate (SrTiO3, STO) films by pulsed laser deposition at 248 nm. Films were deposited in an oxygen background at elevated temperatures on a variety of substrates including MgO(l00), Pt(100)/MgO(100), Pt(111)/MgO(111), Pt(110)/MgO(110), Pt(111)/SiO2/Si, and Pt(111)/glass.Deposited films were characterized by Rutherford Backscattering Spectroscopy (RBS), x-ray diffraction (XRD), and electrical (dielectric constant and leakage) measurements. A strong substrate dependence was found for both the fraction of pyrochlore (Pb2Zr2-xTixO7) phase in the PZT films, and the STO film dielectric constants. The origin of the substrate dependence is discussed with regard to nucleation and interface layer cffects, and the chemistry of the relevant materials.

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