Phase formation during Mn thin film reaction with Ge: Self-aligned germanide process for spintronics

2013 ◽  
Vol 103 (17) ◽  
pp. 172405 ◽  
Author(s):  
O. Abbes ◽  
A. Portavoce ◽  
V. Le Thanh ◽  
C. Girardeaux ◽  
L. Michez
Keyword(s):  
1985 ◽  
Vol 47 (9) ◽  
pp. 934-936 ◽  
Author(s):  
A. J. Yu ◽  
G. J. Galvin ◽  
C. J. Palmstro/m ◽  
J. W. Mayer

1995 ◽  
Vol 403 ◽  
Author(s):  
K. Barmak ◽  
C. Michaelsent ◽  
J. Rickman ◽  
M. Dahmstt

AbstractIt is a well known fact that the properties and performance of polycrystalline materials, including polycrystalline thin films, are strongly affected by the grain structure. Therefore, in treating reactive phase formation in these films, it is (or it will inevitably be) necessary to quantify the grain structure of reactant and product phases and its evolution during the course of the reaction. Theoretical models and the conventional view of thin film reactions, however, have been largely extensions, to small and finite dimensions, of theories and descriptions developed for bulk diffusion couples. These models and descriptions primarily focus on the growth stage and to a much lesser extent on the nucleation stage. Consequently, these models and descriptions are not able to treat the development of product phase grain structure. Recent calorimetric investigations of several thin film systems demonstrate the importance of nucleation kinetics (and hence nucleation barriers) in product phase formation and provide quantitative measures of the thermodynamics and kinetics of formation of the product phases, thereby allowing some degree of comparison with reaction models. Furthermore, microstructural investigations of thin-film reactions demonstrate the non-planarity of the growth front and highlight the role of reactant-phase grain boundaries. In this paper, a summary of these experimental studies and recent theoretical treatments, which combine nucleation and growth in an integrated manner, is presented, with particular emphasis on the Nb/Al system. These experiments and models lead to a new view of reactive phase formation and grain structure evolution as one in which the latter is an integral part of the former. Based on this view, directions for future research are discussed.


2001 ◽  
Vol 668 ◽  
Author(s):  
Axel Neisser ◽  
Jacobo Álvarez-García ◽  
Lorenzo Calvo-Barrio ◽  
Reiner Klenk ◽  
Thomas W. Matthes ◽  
...  

ABSTRACTThis contribution compares the growth of Cu(Ga,In)S2 based thin film solar cell absorbers in rapid thermal systems using sulfur vapor Sx or H2S/Ar as reactive atmosphere, focusing on Ga-related influences on film growth and phase formation. Cu-In alloying in the precursor is kinetically hindered by the presence of Cu-Ga phases. In sulfur vapor Ga-containing samples sulfurize via an intermediate CuIn2S8 phase, thereby delaying the full sulfurization and recrystallization of the layer. In contrast, in H2S/Ar fast Ga-In interdiffusion and no intermediate chalcogenide phases are observed. The inhomogeneous Ga depth distribution usually reported for sequentially prepared Cu(In,Ga)S2 films can be assigned to the segregation of CuGaS2 prior to CuInS2.


2001 ◽  
Vol 79 (3) ◽  
pp. 353-355 ◽  
Author(s):  
Sakhrat Khizroev ◽  
Dmitri Litvinov

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