The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors

2013 ◽  
Vol 114 (16) ◽  
pp. 164501 ◽  
Author(s):  
Sukwon Choi ◽  
Eric Heller ◽  
Donald Dorsey ◽  
Ramakrishna Vetury ◽  
Samuel Graham
Keyword(s):  
Mechanical Stress ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
The Impact

The AlInGaN back barrier effect on DC characteristics of AlGaN/GaN high electron mobility transistor

2019 ◽  
Vol 33 (18) ◽  
pp. 1950190
Author(s):  
Hai Li Wang ◽  
Peng Yang ◽  
Kun Xu ◽  
Xiang Yang Duan ◽  
Shu Xiang Sun
Keyword(s):  
Mole Fraction ◽  
Electron Mobility ◽  
Transport Model ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Conduction Band Offset ◽  
Electron Mobility Transistors ◽  
The Impact

In this paper, we investigated the impact of thickness and mole fraction AlInGaN back barrier on the DC performance of AlGaN/GaN high electron mobility transistors (HEMTs) by numerical simulation. The simulations are performed using the hydrodynamic transport model (HD). The simulation results indicated that an inserted AlInGaN back barrier with increasing thickness and mole fraction could effectively confine the electron in the channel, resulting in a significant improvement of the channel current and transconductance. Additionally, the variation of conduction band offset and the increase of total number electron in the channel led to the threshold voltage moving toward a more negative value.

scholarly journals Channel Characteristics of InAs/AlSb Heterojunction Epitaxy: Comparative Study on Epitaxies with Different Thickness of InAs Channel and AlSb Upper Barrier

Coatings ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 318 ◽  
Author(s):  
He Guan ◽  
Shaoxi Wang ◽  
Lingli Chen ◽  
Bo Gao ◽  
Ying Wang ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Electron Velocity ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Channel Thickness ◽  
The Impact ◽  
Different Thickness

Because of the high electron mobility and electron velocity in the channel, InAs/AlSb high electron mobility transistors (HEMTs) have excellent physical properties, compared with the other traditional III-V semiconductor components, such as ultra-high cut-off frequency, very low power consumption and good noise performance. In this paper, both the structure and working principle of InAs/AlSb HEMTs were studied, the energy band distribution of the InAs/AlSb heterojunction epitaxy was analyzed, and the generation mechanism and scattering mechanism of two-dimensional electron gas (2DEG) in InAs channel were demonstrated, based on the software simulation in detail. In order to discuss the impact of different epitaxial structures on the 2DEG and electron mobility in channel, four kinds of epitaxies with different thickness of InAs channel and AlSb upper-barrier were manufactured. The samples were evaluated with the contact Hall test. It is found the sample with a channel thickness of 15 nm and upper-barrier layer of 17 nm shows a best compromised sheet carrier concentration of 2.56 × 1012 cm−2 and electron mobility of 1.81 × 104 cm2/V·s, and a low sheet resistivity of 135 Ω/□, which we considered to be the optimized thickness of channel layer and upper-barrier layer. This study is a reference to further design InAs/AlSb HEMT, by ensuring a good device performance.

scholarly journals The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Sven Besendörfer ◽  
Elke Meissner ◽  
Farid Medjdoub ◽  
Joff Derluyn ◽  
Jochen Friedrich ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Reverse Bias ◽  
Schottky Diodes ◽  
Forward Bias ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Conductive Atomic Force Microscopy ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
The Impact

Abstract GaN epitaxially grown on Si is a material for power electronics that intrinsically shows a high density of dislocations. We show by Conductive Atomic Force Microscopy (C-AFM) and Defect Selective Etching that even for materials with similar total dislocation densities substantially different subsets of dislocations with screw component act as current leakage paths within the AlGaN barrier under forward bias. Potential reasons are discussed and it will be directly shown by an innovative experiment that current voltage forward characteristics of AlGaN/GaN Schottky diodes shift to lower absolute voltages when such dislocations are present within the device. A local lowering of the Schottky barrier height around conductive dislocations is identified and impurity segregation is assumed as responsible root cause. While dislocation related leakage current under low reverse bias could not be resolved, breakdown of AlGaN/GaN Schottky diodes under high reverse bias correlates well with observed conductive dislocations as measured by C-AFM. If such dislocations are located near the drain side of the gate edge, failure of the gate in terms of breakdown or formation of percolation paths is observed for AlGaN/GaN high electron mobility transistors.

scholarly journals Effect of the High-Temperature Off-State Stresses on the Degradation of AlGaN/GaN HEMTs

Electronics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 1339
Author(s):  
Jinfu Lin ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Chang Liu ◽  
Mengyu Li ◽  
...  
Keyword(s):  
High Temperature ◽  
Electric Field ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Simultaneous Action ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Significant Difference ◽  
The Impact

GaN-based high electron mobility transistors offer high carrier density combined with high electron mobility and often require operation at high frequencies, voltages, and temperatures. The device may be under high temperature and high voltage at the same time in actual operation. In this work, the impact of separate off-state stresses, separate high-temperature stresses, and off-state stresses at high temperatures on AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates was investigated. The output current and gate leakage of the device degenerated to different degrees under either isolated off-state or high-temperature stress. The threshold voltage of the device only exhibited obvious negative drift under the action of high-temperature and off-state stresses. The parameter at high temperature (or room temperature) before stress application was the reference. We found that there was no significant difference in the degradation rate of drain current and transconductance peak when the same off-state stress was applied to the device at different temperatures. It was concluded that, under the high-temperature off-state electric field pressure, there were two degradation mechanisms: one was the inverse piezoelectric polarization mechanism only related to the electric field, and the other was the degradation mechanism of the simultaneous action of temperature and electric field.

scholarly journals The Impact of AlxGa1−xN Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Six-Inch MCZ Si Substrate

Coatings ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 570
Author(s):  
H.Y. Wang ◽  
H.C. Chiu ◽  
W.C. Hsu ◽  
C.M. Liu ◽  
C.Y. Chuang ◽  
...  
Keyword(s):  
Mole Fraction ◽  
Electron Mobility ◽  
Heat Dissipation ◽  
Surface Defects ◽  
Lattice Mismatch ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
The Impact

In this study, AlGaN/GaN high electron mobility transistors (HEMTs) with AlGaN back barriers (B.B.) were comprehensively investigated based on the different Al mole fractions and thicknesses in the design of the experiments. It was shown that the off-state leakage current can be suppressed following an increase of the Al mole fraction due to the enhancement of the back barrier height. Increasing the AlGaN thickness deteriorated device performance because of the generation of lattice mismatch induced surface defects. The dynamic on-resistance (RON) measurements indicated that the Al mole fraction and thickness of the B.B. both affected the buffer trapping phenomenon. In addition, the thickness of B.B. also influenced the substrate heat dissipation ability which is also a key index for high power RF device applications.

Impact of low dose gamma irradiation on electronic carrier transport in AlGaN/GaN High Electron Mobility Transistors

2015 ◽  
Vol 1792 ◽  
Author(s):  
Anupama Yadav ◽  
Elena Flitsiyan ◽  
Leonid Chernyak ◽  
Fan Ren ◽  
Stephen J. Pearton ◽  
...  
Keyword(s):  
Gamma Irradiation ◽  
Electron Mobility ◽  
Carrier Transport ◽  
Minority Carrier ◽  
High Electron Mobility Transistors ◽  
Electron Injection ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
The Impact

ABSTRACTAlGaN/GaN High Electron Mobility Transistors were exposed to 60Co gamma-irradiation to doses up to 300Gy. The impact of Compton- electron injection (due to gamma-irradiation) is studied through monitoring of minority carrier transport using Electron Beam Induced Current (EBIC) technique. Temperature dependent EBIC measurements were conducted on devices before and after exposure to the irradiation, which provide us with critical information on gamma-irradiation induced defects in the material. As a result of irradiation, minority carrier diffusion length increases significantly, with an accompanying decrease in the activation energy. This is consistent with the longer life time of minority carrier in the material’s valence band as a result of an internal electron injection and subsequent trapping of Compton electrons on neutral levels.

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