Uncooled detector challenges: Millimeter-wave and terahertz long channel field effect transistor and Schottky barrier diode detectors

2013 ◽  
Vol 114 (16) ◽  
pp. 164503 ◽  
Author(s):  
M. Sakhno ◽  
A. Golenkov ◽  
F. Sizov
Keyword(s):  
Schottky Barrier ◽  
Millimeter Wave ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Schottky Barrier Diode ◽  
Effect Transistor ◽  
Long Channel

Improving the accuracy of the charge-sheet model for the long-channel metal-oxide semiconductor field-effect transistor

1987 ◽  
Vol 65 (8) ◽  
pp. 995-998
Author(s):  
N. G. Tarr
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Potential Drop ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Analytic Approximation ◽  
Effect Transistor ◽  
Long Channel

It is shown that the accuracy of the charge-sheet model for the long-channel metal-oxide-semiconductor field-effect transistor can be improved by allowing for the small potential drop across the inversion layer, and by using a more accurate analytic approximation for the charge stored in the depletion region.

Millimeter wave oscillations in a log-periodic antenna integrated with field-effect transistor

2009 ◽  
Vol 52 (8) ◽  
pp. 564-567
Author(s):  
V. E. Lyubchenko ◽  
V. I. Kalinin ◽  
V. D. Kotov ◽  
E. O. Yunevich
Keyword(s):  
Millimeter Wave ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Log Periodic Antenna

scholarly journals AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range

2019 ◽  
Vol 34 (2) ◽  
pp. 024002 ◽  
Author(s):  
P Sai ◽  
D B But ◽  
I Yahniuk ◽  
M Grabowski ◽  
M Sakowicz ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Schottky Barrier 3C-SiC Nanowire Field Effect Transistor

2011 ◽  
Vol 679-680 ◽  
pp. 613-616 ◽  
Author(s):  
Konstantinos Rogdakis ◽  
Edwige Bano ◽  
Laurent Montes ◽  
Mikhael Bechelany ◽  
David Cornu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Barriers ◽  
Catalyst Free ◽  
Effect Transistor ◽  
Contact Barrier ◽  
Gating Effect

Back-gated field effect transistors (FETs) based on catalyst-free grown 3C-SiC nanowire (NW) were fabricated. Devices with rectifying Source (S) and Drain (D) contacts have been observed. In contrast with the ohmic-like devices reported in the literature, the Schottky contact barrier (SB) at S/ D regions acts beneficially for the FET performance by suppressing the off-current. At high positive gate voltages (>10 V), the Schottky barriers tend to be more transparent leading to ION/IOFF ratio equal to ~ 103 in contrast to the weak gating effect of the ohmic-contacted 3C-SiC NWFETs.

Schottky barrier transport in InSb/AlInSb quantum well field effect transistor structures

2006 ◽  
Vol 21 (10) ◽  
pp. 1408-1411 ◽  
Author(s):  
J M S Orr ◽  
P D Buckle ◽  
M Fearn ◽  
P J Wilding ◽  
C J Bartlett ◽  
...  
Keyword(s):  
Quantum Well ◽  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Well Field ◽  
Effect Transistor
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