Giant junction magnetoresistance effect in ferromagnet/semiconductor heterostructures

2013 ◽  
Vol 114 (15) ◽  
pp. 154513 ◽  
Author(s):  
Anirban Sarkar ◽  
Rajdeep Adhikari ◽  
Amal Kumar Das
Keyword(s):  
Semiconductor Heterostructures ◽  
Magnetoresistance Effect

Interlayer mixing in GaAs/AlxGa1-xAs heterostructures as a result of Se+ ion implantation

1988 ◽  
Vol 46 ◽  
pp. 908-909
Author(s):  
E.G. Bithell ◽  
W.M. Stobbs
Keyword(s):  
Ion Implantation ◽  
Diffusion Coefficients ◽  
Dark Field ◽  
Atomic Mass ◽  
Composition Profile ◽  
Semiconductor Heterostructures ◽  
Transmission Electron ◽  
Microscope Images ◽  
Damage Process ◽  
Electron Energy Loss

It is well known that the microstructural consequences of the ion implantation of semiconductor heterostructures can be severe: amorphisation of the damaged region is possible, and layer intermixing can result both from the original damage process and from the enhancement of the diffusion coefficients for the constituents of the original composition profile. A very large number of variables are involved (the atomic mass of the target, the mass and energy of the implant species, the flux and the total dose, the substrate temperature etc.) so that experimental data are needed despite the existence of relatively well developed models for the implantation process. A major difficulty is that conventional techniques (e.g. electron energy loss spectroscopy) have inadequate resolution for the quantification of any changes in the composition profile of fine scale multilayers. However we have demonstrated that the measurement of 002 dark field intensities in transmission electron microscope images of GaAs / AlxGa1_xAs heterostructures can allow the measurement of the local Al / Ga ratio.

Tunnel Magnetoresistance Effect for Double Tunnel Junctions with Al Intermediate Layer.

2001 ◽  
Vol 25 (4−2) ◽  
pp. 767-770 ◽  
Author(s):  
T. Daibou ◽  
M. Oogane ◽  
Y. Ando ◽  
C. Kim ◽  
O. Song ◽  
...  
Keyword(s):  
Intermediate Layer ◽  
Tunnel Junctions ◽  
Magnetoresistance Effect ◽  
Tunnel Magnetoresistance

Light-Induced Drift of Quantum-Confined Electrons in Semiconductor Heterostructures

1990 ◽  
Author(s):  
Mark I. Stockman ◽  
Lakshmi N. Pandey ◽  
Thomas F. George
Keyword(s):  
Semiconductor Heterostructures ◽  
Quantum Confined

Pressure-tuned colossal magnetoresistance effect in n-type CdCr2Se4

2021 ◽  
Vol 118 (26) ◽  
pp. 262407
Author(s):  
Bowen Zhang ◽  
Chuanchuan Gu ◽  
Chao An ◽  
Xuliang Chen ◽  
Yonghui Zhou ◽  
...  
Keyword(s):  
Colossal Magnetoresistance ◽  
Magnetoresistance Effect ◽  
Colossal Magnetoresistance Effect

Extraordinary anisotropic magnetoresistance effect at room temperature in Co/Ni multilayers

1996 ◽  
Vol 156 (1-3) ◽  
pp. 369-370
Author(s):  
C. Prados ◽  
D. García ◽  
F. Lesmes ◽  
J.J. Freijo ◽  
A. Hemando
Keyword(s):  
Room Temperature ◽  
Anisotropic Magnetoresistance ◽  
Magnetoresistance Effect

scholarly journals Role of substrate strain to tune energy bands–Seebeck relationship in semiconductor heterostructures

2021 ◽  
Vol 129 (2) ◽  
pp. 025301
Author(s):  
Vitaly S. Proshchenko ◽  
Manoj Settipalli ◽  
Artem K. Pimachev ◽  
Sanghamitra Neogi
Keyword(s):  
Semiconductor Heterostructures ◽  
Energy Bands ◽  
Substrate Strain
Sign in / Sign up

Export Citation Format

Share Document