Electrostatic drift effects on near-surface defect distribution in TiO2

2013 ◽  
Vol 103 (14) ◽  
pp. 141601 ◽  
Author(s):  
Prashun Gorai ◽  
Alice G. Hollister ◽  
Edmund G. Seebauer
Keyword(s):  
Surface Defect ◽  
Near Surface ◽  
Defect Distribution

Near Surface Defect Distribution in Silicon Under Etching

1998 ◽  
Vol 510 ◽  
Author(s):  
Nikolai A. Yarykin
Keyword(s):  
Room Temperature ◽  
Surface Defect ◽  
Diffusion Length ◽  
Characteristic Length ◽  
Hydrogen Atoms ◽  
Near Surface ◽  
Defect Distribution ◽  
Depth Profiles ◽  
Silicon Crystals ◽  
Defect Interaction

AbstractThe distribution of hydrogen penetrated into n-type silicon crystals during chemical etching is described mathematically. The depth profiles of the defects passivated by hydrogen and of defect-hydrogen complexes are also calculated. Comparison with the experimental data obtained on the silicon crystals with radiation defects and doped with transition metals reveals that the model adequately describes the processes in the crystal. By comparing the parameters of the depth profiles, the passivation and appearance of different defects are shown to be caused by the same diffusing species. The number of hydrogen atoms contained in the defect-hydrogen complexes and the distance of the hydrogen-defect interaction are determined from the characteristic length of the defect distribution. The diffusion length (1 to 3 νm) and diffusivity (> 5-10−9 cm2s−1) of hydrogen at room temperature are found indirectly based on the other defect distribution.

scholarly journals Tooth Root Bending Fatigue Strength of High-Density Sintered Small-Module Spur Gears: The Effect of Porosity and Microstructure

Metals ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 599 ◽  
Author(s):  
Vigilio Fontanari ◽  
Alberto Molinari ◽  
Michelangelo Marini ◽  
Wolfgang Pahl ◽  
Matteo Benedetti
Keyword(s):  
Fatigue Strength ◽  
Surface Defect ◽  
Detrimental Effect ◽  
Case Hardening ◽  
Spur Gears ◽  
Tooth Root ◽  
Near Surface ◽  
Bending Fatigue ◽  
Microstructural Constituent ◽  
Bending Fatigue Strength

The present paper is aimed at investigating the effect of porosity and microstructure on tooth root bending fatigue of small-module spur gears produced by powder metallurgy (P/M). Specifically, three steel variants differing in powder composition and alloying route were subjected either to case-hardening or sinter-hardening. The obtained results were interpreted in light of microstructural and fractographic inspections. On the basis of the Murakami a r e a method, it was found that fatigue strength is mainly dictated by the largest near-surface defect and by the hardness of the softest microstructural constituent. Owing to the very complicated shape of the critical pore, it was found that its maximum Feret diameter is the geometrical parameter that best captures the detrimental effect on fatigue.

Ultrasonic TOFD Method for near Surface Defect Detection Using Longitudinal Secondary Wave

2012 ◽  
Vol 157-158 ◽  
pp. 7-10
Author(s):  
Chao Lu ◽  
Guo Chen ◽  
Xin Wang
Keyword(s):  
Surface Defect ◽  
Detection Sensitivity ◽  
Secondary Wave ◽  
Diffraction Reflection ◽  
Artificial Defect ◽  
Near Surface ◽  
Image Characteristics ◽  
Blind Area ◽  
Detection Mode ◽  
Surface Defect Detection

Aim at the problem of near surface blind area in ultrasonic TOFD technique, a new testing mode combined to ultrasound time of flight diffraction-reflection(TOFDR) and the three-fold reflected(TOFDW) based on secondary longitudinal waves was put forward. Through analysis the transmission characteristics of TOFDR and TOFDW, the two modes of the detection principle were illustrated, and discussed the ability in near surface detection of the two methods. Finally through the detecting artificial defects detection, the signal and image characteristics and detection sensitivity under the modified detection mode were studied. The artificial defect with buried depth of 1mm can be effectively detected from the D-scan image by the combined TOFDR and TOFDW methods.

Electronic near-surface defect states of bare and metal covered n-GaN films observed by cathodoluminescence spectroscopy

1999 ◽  
Vol 28 (3) ◽  
pp. 308-313 ◽  
Author(s):  
A. P. Young ◽  
J. Schäfer ◽  
L. J. Brillson ◽  
Y. Yang ◽  
S. H. Xu ◽  
...  
Keyword(s):  
Surface Defect ◽  
Defect States ◽  
Near Surface ◽  
Cathodoluminescence Spectroscopy

Near-surface defect distributions in Cu(In,Ga)Se2

2003 ◽  
Vol 431-432 ◽  
pp. 301-306 ◽  
Author(s):  
A. Rockett ◽  
D. Liao ◽  
J.T. Heath ◽  
J.D. Cohen ◽  
Y.M. Strzhemechny ◽  
...  
Keyword(s):  
Surface Defect ◽  
Near Surface

Influence of the roller grooves and the reduction on the surface-defect distribution in steel billet

2010 ◽  
Vol 40 (12) ◽  
pp. 1095-1097
Author(s):  
A. V. Kekukh ◽  
S. Yu. Istomin ◽  
A. A. Makarenko ◽  
E. V. Il’chenko ◽  
A. S. Gubskii
Keyword(s):  
Surface Defect ◽  
Defect Distribution ◽  
Steel Billet

The scanning infra-red microscope (SIRM): Evaluating a new tool for mapping sub-100nm defects in semiconductors

1996 ◽  
Vol 54 ◽  
pp. 964-965
Author(s):  
L. Mule‘Stagno ◽  
J.C. Holzer ◽  
R. Falster ◽  
P. Fraundorf
Keyword(s):  
Surface Defect ◽  
Silicon Oxide ◽  
Electronic Devices ◽  
Device Layer ◽  
Active Device ◽  
Near Surface ◽  
Free Zone ◽  
Manufacturing Yield ◽  
Defects In Semiconductors ◽  
Metallic Impurities

The manufacturing yield and reliability required of modern silicon micro-electronic devices has led to a need for wafer and device manufacturing processes which are immune to metallic contamination. To this end, various ‘gettering’ mechanisms have been developed in which unwanted metallic impurities are ‘gettered’ to regions of the wafer away from the active device layer. ‘Internal (or intrinsic) gettering’ is a method in which silicon-oxide defects are produced in the bulk of the wafer, with a near-surface defect-free zone (denuded zone). In the event ofmetallic contamination during high temperature device manufacturing steps, these bulk microdefects (BMDs) act as heterogeneous sites for metal-silicide precipitation during the cooling, and prevent precipitation of the metals in the device layer. For this reason it is essential to monitor the spatial distribution and density of bulk microdefects during device manufacturing.The standard method by which the density is measured is termed cleave and etch.

Sign in / Sign up

Export Citation Format

Share Document