Local ferroelectric properties in polyvinylidene fluoride/barium lead zirconate titanate nanocomposites: Interface effect

2013 ◽  
Vol 114 (14) ◽  
pp. 144102 ◽  
Author(s):  
M. V. Silibin ◽  
A. V. Solnyshkin ◽  
D. A. Kiselev ◽  
A. N. Morozovska ◽  
E. A. Eliseev ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
Polyvinylidene Fluoride ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Interface Effect ◽  
Zirconate Titanate

Improvement of Ferroelectric Properties of Lead Zirconate Titanate Thin Films by Ion-substitution using Rare-earth Cations

2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Nakaki ◽  
Hiroshi Uchida ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Property ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Crystal Anisotropy ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Ion Substitution

ABSTRACTRare-earth-substituted tetragonal lead zirconate titanate thin films were synthesized for improving the ferroelectric property of conventional lead zirconate titanate. Thin films of Pb1.00REx (Zr0.40Ti0.60)1-(3x /4)O3 (x = 0.02, RE = Y, Dy, Er and Yb) were deposited on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition (CSD). B-site substitution using rare-earth cations described above enhanced the crystal anisotropy, i.e., ratio of PZT lattice parameters c/a. Remanent polarization (Pr) of PZT film was enhanced by Y3+-, Dy3+- and Er3+-substitution from 20 μC/cm2 up to 26, 25 and 26 μC/cm2 respectively, while ion substitution using Yb3+ degraded the Pr value down to 16 μC/cm2. These films had similar coercive fields (Ec) of around 100 kV/cm. Improving the ferroelectric property of PZT film by rare-earth-substitution would be ascribed to the enhancement of the crystal anisotropy. We concluded that ion substitution using some rare-earth cations, such as Y3+, Dy3+ or Er3+, is one of promising technique for improving the ferroelectric property of PZT film.

scholarly journals Ferroelectric properties of lead‐zirconate‐titanate films prepared by laser ablation

1991 ◽  
Vol 58 (25) ◽  
pp. 2910-2912 ◽  
Author(s):  
Hideo Kidoh ◽  
Toshio Ogawa ◽  
Akiharu Morimoto ◽  
Tatsuo Shimizu
Keyword(s):  
Laser Ablation ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Zirconate Titanate

Electrical Conductivity and Dielectric and Ferroelectric Properties of Chromium Doped Lead Zirconate Titanate Ceramic

2009 ◽  
Vol 382 (1) ◽  
pp. 49-55 ◽  
Author(s):  
P. Ketsuwan ◽  
Anurak Prasatkhetragarn ◽  
N. Triamnuk ◽  
C. C. Huang ◽  
A. Ngamjarurojana ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Zirconate Titanate ◽  
Lead Zirconate Titanate Ceramic ◽  
Titanate Ceramic

scholarly journals Perovskite phase formation and ferroelectric properties of the lead nickel niobate–lead zinc niobate–lead zirconate titanate ternary system

2003 ◽  
Vol 18 (12) ◽  
pp. 2882-2889 ◽  
Author(s):  
Naratip Vittayakorn ◽  
Gobwute Rujijanagul ◽  
Tawee Tunkasiri ◽  
Xiaoli Tan ◽  
David P. Cann
Keyword(s):  
Ternary System ◽  
Lead Zirconate Titanate ◽  
Remanent Polarization ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Zirconate Titanate ◽  
Lead Zinc Niobate ◽  
Lead Zinc ◽  
Lead Nickel

The ternary system of lead nickel niobate Pb(Ni1/3Nb2/3)O3 (PNN), lead zinc niobate Pb(Zn1/3Nb2/3)O3 (PZN), and lead zirconate titanate Pb(Zr1/2Ti1/2)O3 (PZT) was investigated to determine the influence of different solid state processing conditions on dielectric and ferroelectric properties. The ceramic materials were characterized using x-ray diffraction, dielectric measurements, and hysteresis measurements. To stabilize the perovskite phase, the columbite route was utilized with a double crucible technique and excess PbO. The phase-pure perovskite phase of PNN–PZN–PZT ceramics was obtained over a wide compositional range. It was observed that for the ternary system 0.5PNN–(0.5 - x)PZN–xPZT, the change in the transition temperature (Tm) is approximately linear with respect to the PZT content in the range x [H11505] 0 to 0.5. With an increase in x, Tm shifts up to high temperatures. Examination of the remanent polarization (Pr) revealed a significant increase with increasing x. In addition, the relative permittivity ([H9280]r) increased as a function of x. The highest permittivities ([H9280]r [H11505] 22,000) and the highest remanent polarization (Pr [H11505] 25 μC/cm2) were recorded for the binary composition 0.5Pb(Ni1/3Nb2/3)O3–0.5Pb(Zr1/2Ti1/2)O3.

Ferroelectric properties of heterolayered lead zirconate titanate thin films

2006 ◽  
Vol 16 (4) ◽  
pp. 425-430 ◽  
Author(s):  
Fransiska Cecilia Kartawidjaja ◽  
Zhaohui Zhou ◽  
John Wang
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Zirconate Titanate

The influence of niobium-doping on lead zirconate titanate ferroelectric thin films

1991 ◽  
Vol 69 (3-4) ◽  
pp. 260-264 ◽  
Author(s):  
E. M. Griswold ◽  
M. Sayer ◽  
D. T. Amm ◽  
I. D. Calder
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Ferroelectric Thin Films ◽  
Crystallographic Structure ◽  
Niobium Content ◽  
Processing Technologies ◽  
Niobium Doping ◽  
Zirconate Titanate

Ferroelectric thin films have recently proven viable for nonvolatile memory applications in semiconductor technology. Current research is focused on the development of processing technologies and deposition on metallized semiconductor substrates. In this study, niobium-doped lead zirconate titanate thin films were prepared by a dc magnetron-sputtering technique using a multielement metal target. Films were deposited on indium tin oxide coated glass and on metallizations on silicon substrates. The crystallographic structure and surface morphology of the films was examined by scanning electron microscopy and X-ray diffraction as a function of processing variables such as sputtering pressure, film thickness, and niobium content. Electrical characterization of the films is discussed in terms of ferroelectric hysteresis and polarization properties. Improved ferroelectric properties are achieved through a densified structure resulting from niobium-doping.

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