Erbium concentration control and optimization in erbium yttrium chloride silicate single crystal nanowires as a high gain material

2013 ◽  
Vol 103 (12) ◽  
pp. 121902 ◽  
Author(s):  
Leijun Yin ◽  
David Shelhammer ◽  
Gejian Zhao ◽  
Zhicheng Liu ◽  
C. Z. Ning
Keyword(s):  
Single Crystal ◽  
High Gain ◽  
Yttrium Chloride ◽  
Gain Material

Single crystal erbium compound nanowires as high gain material for on-chip light source applications

2016 ◽  
Vol 9 (2) ◽  
pp. 312-317 ◽  
Author(s):  
Zhicheng Liu ◽  
Hao Sun ◽  
Leijun Yin ◽  
Yongzhuo Li ◽  
Jianxing Zhang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Light Source ◽  
High Gain ◽  
Gain Material ◽  
On Chip

Long lifetime, high density single-crystal erbium compound nanowires as a high optical gain material

2012 ◽  
Vol 100 (24) ◽  
pp. 241905 ◽  
Author(s):  
Leijun Yin ◽  
Hao Ning ◽  
Sunay Turkdogan ◽  
Zhicheng Liu ◽  
Patricia L. Nichols ◽  
...  
Keyword(s):  
Single Crystal ◽  
Optical Gain ◽  
High Density ◽  
Gain Material ◽  
Long Lifetime

scholarly journals High gain observed in X-ray induced currents in synthetic single crystal diamonds

2007 ◽  
Vol 204 (9) ◽  
pp. 3011-3016 ◽  
Author(s):  
A. Lohstroh ◽  
P. J. Sellin ◽  
F. Boroumand ◽  
J. Morse
Keyword(s):  
Single Crystal ◽  
High Gain ◽  
X Ray ◽  
Induced Currents

scholarly journals Growth of graphene with large single-crystal domains by Ni foam-assisted structure and its high-gain field-effect transistors

2019 ◽  
Vol 1 (3) ◽  
pp. 1130-1135 ◽  
Author(s):  
Xuedong Gao ◽  
Cui Yu ◽  
Zezhao He ◽  
Xubo Song ◽  
Qingbin Liu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Gain ◽  
Nucleation Density ◽  
Large Single Crystal ◽  
Ni Foam ◽  
Foam Structure ◽  
Large Domain ◽  
Controlled Nucleation

Growth of large-domain-sized single-crystal graphene with controlled nucleation density by Ni foam structure.

The Polysilicon-Silicon Interface

1987 ◽  
Vol 106 ◽  
Author(s):  
Robert W. Keyes
Keyword(s):  
Single Crystal ◽  
Polycrystalline Silicon ◽  
Single Crystal Silicon ◽  
Modern Method ◽  
High Gain ◽  
Bipolar Transistors ◽  
Crystal Silicon ◽  
Silicon Technology ◽  
Silicon Interface ◽  
Dopant Source

ABSTRACTPolycrystalline silicon is frequently deposited on single crystal silicon as a part of devices. The poly is used as both a dopant source and a low resistance contact in a modern method of fabricating high gain bipolar transistors. The randomness of polysilicon and its interface with the single crystal is an inherent source of differences among nominally identical transistors, however, and is a marked departure from the trend towards more and more perfect crystals that characterizes the rest of silicon technology.

A Preparation of High Resolution Standards for Electron Microscopy. Part II

1971 ◽  
Vol 29 ◽  
pp. 160-161
Author(s):  
Akira Tanaka ◽  
David F. Harling
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Carbon Black ◽  
Single Crystal ◽  
Dark Field ◽  
Graphitized Carbon Black ◽  
Graphitized Carbon ◽  
Dark Field Imaging ◽  
Crystal Films ◽  
Micro Holes

In the previous paper, the author reported on a technique for preparing vapor-deposited single crystal films as high resolution standards for electron microscopy. The present paper is intended to describe the preparation of several high resolution standards for dark field microscopy and also to mention some results obtained from these studies. Three preparations were used initially: 1.) Graphitized carbon black, 2.) Epitaxially grown particles of different metals prepared by vapor deposition, and 3.) Particles grown epitaxially on the edge of micro-holes formed in a gold single crystal film.The authors successfully obtained dark field micrographs demonstrating the 3.4Å lattice spacing of graphitized carbon black and the Au single crystal (111) lattice of 2.35Å. The latter spacing is especially suitable for dark field imaging because of its preparation, as in 3.), above. After the deposited film of Au (001) orientation is prepared at 400°C the substrate temperature is raised, resulting in the formation of many square micro-holes caused by partial evaporation of the Au film.

Structure of Palladium Single-Crystal Films Prepared by Flash Evaporation onto (001) NaCl Substrates

1970 ◽  
Vol 28 ◽  
pp. 456-457
Author(s):  
L. E. Murr ◽  
G. Wong
Keyword(s):  
Single Crystal ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
High Rate ◽  
Flash Evaporation ◽  
Optimum Load ◽  
Single Crystal Films ◽  
Crystal Films ◽  
A Current

Palladium single-crystal films have been prepared by Matthews in ultra-high vacuum by evaporation onto (001) NaCl substrates cleaved in-situ, and maintained at ∼ 350° C. Murr has also produced large-grained and single-crystal Pd films by high-rate evaporation onto (001) NaCl air-cleaved substrates at 350°C. In the present work, very large (∼ 3cm2), continuous single-crystal films of Pd have been prepared by flash evaporation onto air-cleaved (001) NaCl substrates at temperatures at or below 250°C. Evaporation rates estimated to be ≧ 2000 Å/sec, were obtained by effectively short-circuiting 1 mil tungsten evaporation boats in a self-regulating system which maintained an optimum load current of approximately 90 amperes; corresponding to a current density through the boat of ∼ 4 × 104 amperes/cm2.

Dislocations, Ordering and Antiferromagnetic Domains in MnO

1970 ◽  
Vol 28 ◽  
pp. 522-523
Author(s):  
D. J. Barber ◽  
R. G. Evans
Keyword(s):  
Electron Diffraction ◽  
Single Crystal ◽  
Optical Microscopy ◽  
Defect Chemistry ◽  
Magnetic Structures ◽  
Optically Transparent ◽  
Magnetic Features ◽  
Antiferromagnetic Domains

Manganese (II) oxide, MnO, in common with CoO, NiO and FeO, possesses the NaCl structure and shows antiferromagnetism below its Neel point, Tn∼ 122 K. However, the defect chemistry of the four oxides is different and the magnetic structures are not identical. The non-stoichiometry in MnO2 small (∼2%) and below the Tn the spins lie in (111) planes. Previous work reported observations of magnetic features in CoO and NiO. The aim of our work was to find explanations for certain resonance results on antiferromagnetic MnO.Foils of single crystal MnO were prepared from shaped discs by dissolution in a mixture of HCl and HNO3. Optical microscopy revealed that the etch-pitted foils contained cruciform-shaped precipitates, often thick and proud of the surface but red-colored when optically transparent (MnO is green). Electron diffraction and probe microanalysis indicated that the precipitates were Mn2O3, in contrast with recent findings of Co3O4 in CoO.

Electron Microscopy of Shock Loaded Polycrystalline Beryllium

1974 ◽  
Vol 32 ◽  
pp. 506-507 ◽  
Author(s):  
J. M. Galbraith ◽  
L. E. Murr ◽  
A. L. Stevens
Keyword(s):  
Electron Microscopy ◽  
Wave Propagation ◽  
Structural Change ◽  
Single Crystal ◽  
Diffraction Pattern ◽  
Shock Loading ◽  
Slip Systems ◽  
Compression Tests ◽  
X Ray Diffraction ◽  
X Ray

Uniaxial compression tests and hydrostatic tests at pressures up to 27 kbars have been performed to determine operating slip systems in single crystal and polycrystal1ine beryllium. A recent study has been made of wave propagation in single crystal beryllium by shock loading to selectively activate various slip systems, and this has been followed by a study of wave propagation and spallation in textured, polycrystal1ine beryllium. An alteration in the X-ray diffraction pattern has been noted after shock loading, but this alteration has not yet been correlated with any structural change occurring during shock loading of polycrystal1ine beryllium.This study is being conducted in an effort to characterize the effects of shock loading on textured, polycrystal1ine beryllium. Samples were fabricated from a billet of Kawecki-Berylco hot pressed HP-10 beryllium.

Studies of Oxide Formation on Copper Thin Films by Electron Microscopy

1977 ◽  
Vol 35 ◽  
pp. 316-317
Author(s):  
G. G. Hembree ◽  
M. A. Otooni ◽  
J. M. Cowley
Keyword(s):  
Electron Microscopy ◽  
Electron Diffraction ◽  
Single Crystal ◽  
Crystal Surface ◽  
Crystal Defects ◽  
Diffraction Reflection ◽  
Reaction Products ◽  
Intermediate Energies ◽  
Crystal Films ◽  
Reflection Electron Microscopy

The formation of oxide structures on single crystal films of metals has been investigated using the REMEDIE system (for Reflection Electron Microscopy and Electron Diffraction at Intermediate Energies) (1). Using this instrument scanning images can be obtained with a 5 to 15keV incident electron beam by collecting either secondary or diffracted electrons from the crystal surface (2). It is particularly suited to studies of the present sort where the surface reactions are strongly related to surface morphology and crystal defects and the growth of reaction products is inhomogeneous and not adequately described in terms of a single parameter. Observation of the samples has also been made by reflection electron diffraction, reflection electron microscopy and replication techniques in a JEM-100B electron microscope.A thin single crystal film of copper, epitaxially grown on NaCl of (100) orientation, was repositioned on a large copper single crystal of (111) orientation.

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