The effect of quantum confinement on tunneling field-effect transistors with high-κ gate dielectric

J. L. Padilla; F. Gámiz; A. Godoy

doi:10.1063/1.4821424

The effect of quantum confinement on tunneling field-effect transistors with high-κ gate dielectric

Applied Physics Letters ◽

10.1063/1.4821424 ◽

2013 ◽

Vol 103 (11) ◽

pp. 112105 ◽

Cited By ~ 10

Author(s):

J. L. Padilla ◽

F. Gámiz ◽

A. Godoy

Keyword(s):

Quantum Confinement ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors

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Linearity of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

JSTS Journal of Semiconductor Technology and Science ◽

10.5573/jsts.2013.13.6.551 ◽

2013 ◽

Vol 13 (6) ◽

pp. 551-555 ◽

Cited By ~ 5

Author(s):

Hyun Kook Lee ◽

Woo Young Choi

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors

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Radio Frequency Performance of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.124301 ◽

2011 ◽

Vol 50 (12R) ◽

pp. 124301 ◽

Cited By ~ 8

Author(s):

In Man Kang ◽

Jung-Shik Jang ◽

Woo Young Choi

Keyword(s):

Radio Frequency ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors

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Characteristics of Gate-All-Around Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.06fe03 ◽

2012 ◽

Vol 51 ◽

pp. 06FE03 ◽

Cited By ~ 4

Author(s):

Jae Sung Lee ◽

Woo Young Choi ◽

In Man Kang

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors

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Effects of Device Geometry on Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

IEEE Electron Device Letters ◽

10.1109/led.2012.2206790 ◽

2012 ◽

Vol 33 (10) ◽

pp. 1459-1461 ◽

Cited By ~ 49

Author(s):

Min Jin Lee ◽

Woo Young Choi

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors ◽

Device Geometry

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Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification

Applied Physics Letters ◽

10.1063/1.4902117 ◽

2014 ◽

Vol 105 (20) ◽

pp. 203507 ◽

Cited By ~ 7

Author(s):

Quentin Smets ◽

Anne S. Verhulst ◽

Koen Martens ◽

Han Chung Lin ◽

Salim El Kazzi ◽

...

Keyword(s):

Experimental Verification ◽

Quantum Confinement ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors

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Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2010.2052167 ◽

2010 ◽

Vol 57 (9) ◽

pp. 2317-2319 ◽

Cited By ~ 254

Author(s):

Woo Young Choi ◽

Woojun Lee

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors

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Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs)

Nano Convergence ◽

10.1186/s40580-016-0073-y ◽

2016 ◽

Vol 3 (1) ◽

Cited By ~ 19

Author(s):

Woo Young Choi ◽

Hyun Kook Lee

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors

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Dual-dielectric-constant spacer hetero-gate-dielectric tunneling field-effect transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/28/5/052001 ◽

2013 ◽

Vol 28 (5) ◽

pp. 052001 ◽

Cited By ~ 29

Author(s):

Gibong Lee ◽

Jung-Shik Jang ◽

Woo Young Choi

Keyword(s):

Dielectric Constant ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors

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Low-Power Circuit Applicability of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors (HG TFETs)

IEICE Transactions on Electronics ◽

10.1587/transele.e95.c.910 ◽

2012 ◽

Vol E95.C (5) ◽

pp. 910-913 ◽

Cited By ~ 6

Author(s):

Gibong LEE ◽

Woo Young CHOI

Keyword(s):

Low Power ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Power Circuit ◽

Tunneling Field Effect Transistors

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Fully Analytical Carrier-Based Charge and Capacitance Model for Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2849742 ◽

2018 ◽

Vol 65 (8) ◽

pp. 3555-3561 ◽

Cited By ~ 4

Author(s):

Bin Lu ◽

Hongliang Lu ◽

Yuming Zhang ◽

Yimen Zhang ◽

Xiaoran Cui ◽

...

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors ◽

Capacitance Model

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