Energy position of the active near-interface traps in metal–oxide–semiconductor field-effect transistors on 4H–SiC

D. Haasmann; S. Dimitrijev

doi:10.1063/1.4821362

Energy position of the active near-interface traps in metal–oxide–semiconductor field-effect transistors on 4H–SiC

Applied Physics Letters ◽

10.1063/1.4821362 ◽

2013 ◽

Vol 103 (11) ◽

pp. 113506 ◽

Cited By ~ 26

Author(s):

D. Haasmann ◽

S. Dimitrijev

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Energy Position

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The Generation Process of Interface Traps by Hot-Carrier Injection in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc09 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC09 ◽

Cited By ~ 2

Author(s):

Ming Hu ◽

Takuya Yamane ◽

Toshiaki Tsuchiya

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Generation Process ◽

Interface Traps ◽

Carrier Injection ◽

Hot Carrier ◽

Hot Carrier Injection

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Energy distribution of interface traps in germanium metal-oxide-semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility

Applied Physics Letters ◽

10.1063/1.2976632 ◽

2008 ◽

Vol 93 (8) ◽

pp. 083510 ◽

Cited By ~ 9

Author(s):

Ruilong Xie ◽

Nan Wu ◽

Chen Shen ◽

Chunxiang Zhu

Keyword(s):

Metal Oxide ◽

Energy Distribution ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps

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Are dangling bond centers important interface traps in 4H-SiC metal oxide semiconductor field effect transistors?

Applied Physics Letters ◽

10.1063/1.4963708 ◽

2016 ◽

Vol 109 (14) ◽

pp. 142106 ◽

Cited By ~ 8

Author(s):

M. A. Anders ◽

P. M. Lenahan ◽

A. J. Lelis

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Dangling Bond

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Hot‐carrier‐induced degradation of metal‐oxide‐semiconductor field‐effect transistors: Oxide charge versus interface traps

Journal of Applied Physics ◽

10.1063/1.342548 ◽

1989 ◽

Vol 65 (1) ◽

pp. 354-360 ◽

Cited By ~ 43

Author(s):

Jeong Yeol Choi ◽

Ping Keung Ko ◽

Chenming Hu ◽

William F. Scott

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Oxide Charge ◽

Hot Carrier

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Effect of interface traps related to mobile charges on silicon n-channel metal/oxide/semiconductor field effect transistors determined by a charge-temperature technique

Thin Solid Films ◽

10.1016/0040-6090(86)90003-9 ◽

1986 ◽

Vol 142 (2) ◽

pp. 183-191 ◽

Cited By ~ 8

Author(s):

J.G. Hwu ◽

C.M. Lin ◽

W.S. Wang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Mobile Charges ◽

A Charge ◽

Charge Temperature

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Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in $\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As}$ Metal–Oxide–Semiconductor Field Effect Transistors

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2013.2289330 ◽

2013 ◽

Vol 13 (4) ◽

pp. 456-462 ◽

Cited By ~ 22

Author(s):

Noriyuki Taoka ◽

Masafumi Yokoyama ◽

Sang Hyeon Kim ◽

Rena Suzuki ◽

Sunghoon Lee ◽

...

Keyword(s):

Metal Oxide ◽

Fermi Level ◽

Conduction Band ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Fermi Level Pinning

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Investigation of Switching Kinetics of Interface Traps in Metal-Oxide-Semiconductor-Field-Effect-Transistors with Ultra-narrow Channels

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.2363 ◽

2002 ◽

Vol 41 (Part 1, No. 4B) ◽

pp. 2363-2366 ◽

Cited By ~ 1

Author(s):

Yi Shi ◽

Bo Shen ◽

Huiming Bu ◽

Xiaoli Yuan ◽

Shulin Gu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Narrow Channels ◽

Kinetics Of

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Charge-pumping characterization of interface traps in Al2O3/In0.75Ga0.25As metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3315870 ◽

2010 ◽

Vol 96 (7) ◽

pp. 072102 ◽

Cited By ~ 13

Author(s):

W. Wang ◽

J. Deng ◽

J. C. M. Hwang ◽

Y. Xuan ◽

Y. Wu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Charge Pumping

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Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

Applied Physics Letters ◽

10.1063/1.4955465 ◽

2016 ◽

Vol 109 (1) ◽

pp. 012102 ◽

Cited By ~ 18

Author(s):

Patrick Fiorenza ◽

Antonino La Magna ◽

Marilena Vivona ◽

Fabrizio Roccaforte

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Current Transient ◽

Oxide Semiconductor ◽

Interface Traps ◽

Temperature Dependent ◽

Gate Current ◽

Transient Measurements

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The Generation Process of Interface Traps by Hot-Carrier Injection in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bc09 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BC09 ◽

Cited By ~ 4

Author(s):

Ming Hu ◽

Takuya Yamane ◽

Toshiaki Tsuchiya

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Generation Process ◽

Interface Traps ◽

Carrier Injection ◽

Hot Carrier ◽

Hot Carrier Injection

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