scholarly journals Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target

AIP Advances ◽  
2013 ◽  
Vol 3 (9) ◽  
pp. 092109 ◽  
Author(s):  
S. S. Kushvaha ◽  
M. Senthil Kumar ◽  
K. K. Maurya ◽  
M. K. Dalai ◽  
Nita D. Sharma
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Oriented Growth ◽  
Laser Molecular Beam Epitaxy ◽  
Gan Film ◽  
Bulk Target

Structural and Optical Properties of GaN Film on Copper and Graphene/Copper Metal Foils Grown by Laser Molecular Beam Epitaxy

2020 ◽  
Vol 20 (6) ◽  
pp. 3929-3934 ◽  
Author(s):  
C. Ramesh ◽  
P. Tyagi ◽  
S. Bera ◽  
S. Gautam ◽  
Kiran M. Subhedar ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Monolayer Graphene ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Laser Molecular Beam Epitaxy ◽  
Metal Foils ◽  
Direct Growth ◽  
Cu Foil ◽  
Gan Film

We report the direct growth of crystalline GaN on bare copper (Cu) and monolayer-graphene/Cu metal foils using laser molecular beam epitaxy technique at growth temperature of 700 °C. The surface morphology investigated with field emission scanning electron microscopy revealed that the size of GaN grains for film grown on bare Cu falls in range of 90 to 160 nm whereas large grains with size of ˜200 to 600 nm was obtained for GaN grown on graphene/Cu foil under similar growth condition. The transverse optical mode of cubic GaN and E2 (high) phonon mode for wurtzite GaN phases were obtained on the GaN film grown on Cu and graphene/Cu metal foils as deduced by Raman spectroscopy. The photoluminescence (PL) spectroscopy studies showed that the near band edge emission peaks for GaN on Cu and graphene/Cu consist two major peaks at 3.26 and 3.4 eV, corresponding to cubic and wurtzite GaN, respectively. The Raman and PL studies disclosed that the mixed phase growth of GaN occurs on these foils and better structural and optical quality for GaN on graphene/Cu foil. The direct growth of GaN on two dimensional graphene on polycrystalline metal foils is beneficial various transferrable and flexible opto-electronics device applications.

Thermal stability of cubic GaN film grown by molecular-beam epitaxy on GaAs(001)

2002 ◽  
Vol 299 (1) ◽  
pp. 79-84 ◽  
Author(s):  
M Xu ◽  
C.X Liu ◽  
H.F Liu ◽  
G.M Luo ◽  
X.M Chen ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cubic Gan ◽  
Gan Film ◽  
Thermal Stability Of

Excitation Density Dependent Photoluminescence Studies on Homo-Epitaxial GaN Nanowall Networks Grown by Laser Assisted Molecular Beam Epitaxy

2020 ◽  
Vol 20 (6) ◽  
pp. 3866-3872
Author(s):  
Ch. Ramesh ◽  
J. Pandey ◽  
P. Tyagi ◽  
A. Soni ◽  
M. Senthil Kumar ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Blue Shift ◽  
Peak Position ◽  
Excitation Density ◽  
Density Dependent ◽  
Band Emission ◽  
Luminescence Peak ◽  
Photoluminescence Studies ◽  
Gan Film

The optical properties of laser-assisted molecular beam epitaxy grown homo-epitaxialGaN nanowall networks (NWNs) were investigated using power dependent photoluminescence (PL) spectroscopy and compared with homo-epitaxial GaN thin film. The pore size and tip width of GaN NWN sample is ˜120–180 nm and 10–15 nm, respectively. The ultraviolet-visible spectroscopy study shows that the GaN NWNs have low optical light reflection and minimum Fabry-Perot cavity effect than GaN film. The room temperature PL spectroscopy reveals that the GaN NWNs possesses enhanced band gap of 3.51 eV with blue shift of 90 meV than the GaN film (3.42 eV). The excitation density dependent PL spectroscopy measurements reveal that the GaN NWNs nanowall and near band emission (NBE) peak position and its linewidth invariant. The intensity of NBE peak for GaN film and nanowalls varies linearly whereas NBE to defect related yellow luminescence peak intensity ratio shows a non-linear variation on the excitation density. The excitation density in PL measurements plays a key role when the sample quality compared on the basis of PL data.

Composition-spread thin films of pentacene and 6,13-pentacenequinone fabricated by using continuous-wave laser molecular beam epitaxy

2008 ◽  
Vol 254 (8) ◽  
pp. 2336-2341 ◽  
Author(s):  
Seiichiro Yaginuma ◽  
Kenji Itaka ◽  
Yuji Matsumoto ◽  
Tsuyoshi Ohnishi ◽  
Mikk Lippmaa ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Continuous Wave ◽  
Continuous Wave Laser ◽  
Laser Molecular Beam Epitaxy ◽  
Wave Laser
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