Epitaxial growth of the topological insulator Bi2Se3 on Si(111): Growth mode, lattice parameter, and strain state

2013 ◽  
Vol 103 (11) ◽  
pp. 111909 ◽  
Author(s):  
M. Vyshnepolsky ◽  
C. Klein ◽  
F. Klasing ◽  
A. Hanisch-Blicharski ◽  
M. Horn-von Hoegen
Keyword(s):  
Epitaxial Growth ◽  
Topological Insulator ◽  
Strain State ◽  
Lattice Parameter ◽  
Growth Mode

Effect of Sintering Parameter on the Microstructure and Electrical Properties for Bi2Se3 Topological Insulator Crystals

2013 ◽  
Vol 709 ◽  
pp. 172-175
Author(s):  
Li Lv ◽  
Min Zhang ◽  
Li Qin Yang ◽  
Xin Sheng Yang ◽  
Yong Zhao
Keyword(s):  
Electrical Properties ◽  
Cooling Rate ◽  
Single Crystals ◽  
Carrier Concentration ◽  
Topological Insulator ◽  
Layered Structure ◽  
Phase Structure ◽  
Lattice Parameter ◽  
Holding Time ◽  
Type Conductivity

Single crystals of Bi2Se3 topological insulators have been prepared though melt-grown reaction. The sintering parameters of holding time and cooling rate obviously affect the phase structure and electrical properties. The samples with layered structure can be perpendicular cleaved with (0 0 L) axis. All the samples show n-type conductivity caused by the existence of Se vacancies. For low cooling rate, more Se atoms anti-occupy Bi lattice sites, which decreases c-axis lattice parameter and increases carrier concentration n; high cooling rate increases c and decreases n because of less Se atoms occupying Bi lattice sites. Increasing holding time firstly decreases the ratio of Se atoms occupying Bi lattice sites and then increases it, which gives rise to c firstly increase then decrease and n firstly decrease then increase.

Auger electron spectroscopy study of the epitaxial growth mode of (Ca, Sr)F2 on GaAs(100)

1986 ◽  
Vol 168 (1-3) ◽  
pp. 681-687 ◽  
Author(s):  
C. Fontaine ◽  
J.L. Castano ◽  
J. Castagné ◽  
A. Munoz-Yague
Keyword(s):  
Auger Electron Spectroscopy ◽  
Epitaxial Growth ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Growth Mode ◽  
Spectroscopy Study

Surfactant-Mediated Epitaxial Growth of Metallic Thin Films

2010 ◽  
Vol 117 ◽  
pp. 55-61
Author(s):  
Masao Kamiko ◽  
Ryoichi Yamamoto
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Film Growth ◽  
Thin Film Growth ◽  
Growth Mode ◽  
Metallic Thin Films ◽  
Layer By Layer ◽  
Metallic Films ◽  
Heteroepitaxial Growth

The effects of several surfactants on the homoepitaxial and heteroepitaxial growth of metallic films and multilayers have been studied and compared. Our measurements clearly revealed that pre-deposition of a small amount of surfactant prior to the adatom deposition changed thin film growth mode and structure. The pre-deposited surfactant enhanced layer-by-layer (LBL) growth of the homoepitaxial and heteroepitaxial growth of metallic films. The surfactant also enhanced the epitaxial growth of metallic multilayer.

CVD Filling of Narrow Deep 4H-SiC Trenches in a Quasi-Selective Epitaxial Growth Mode

2018 ◽  
Vol 924 ◽  
pp. 116-119 ◽  
Author(s):  
Shi Yang Ji ◽  
Ryoji Kosugi ◽  
Kazutoshi Kojima ◽  
Kazuhiro Mochizuki ◽  
Yasuyuki Kawada ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Epitaxial Growth ◽  
Growth Rates ◽  
Low Risk ◽  
Growth Mode ◽  
Flow Rates ◽  
Defect Generation ◽  
Selective Epitaxial Growth ◽  
Dependent Growth

By mapping the source and HCl flow rates dependent growth rates, the evolving trend of a quasi-selective epitaxial growth (quasi-SEG) that growing very thin epilayer on mesa top and ensuring an extremely low risk of voids defect generation was firstly figured out on a 5-μm 4H-SiC trench. Then, basing on the acquired knowledge, a 25-μm 4H-SiC trench with an aspect ratio up to ~10 was completely filled in the quasi-SEG mode.

Epitaxial TaC Films for the Selective Area Growth of SiC

2008 ◽  
Vol 600-603 ◽  
pp. 183-186 ◽  
Author(s):  
Kenneth A. Jones ◽  
T.S. Zheleva ◽  
R.D. Vispute ◽  
Shiva S. Hullavarad ◽  
M. Ervin ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
Epitaxial Growth ◽  
Lattice Parameter ◽  
Selective Area Growth ◽  
Recrystallization Process ◽  
High Temperature Annealing ◽  
Selective Area ◽  
Area Growth ◽  
Lattice Matched

At sufficiently high temperatures PLD deposited TaC films can be grown epitaxially on 4H-SiC (0001) substrates; at lower temperatures the films recrystallize and ball up forming a large number of pinholes. The growth temperature for epitaxy was found to be 1000°C, and it was facilitated by the epitaxial growth of a thin (2 nm) transition layer of hexagonal Ta2C. High temperature annealing produced changes in the surface morphology, caused grain growth, and created pin holes through a recrystallization process in the films deposited at the lower temperatures, while the films deposited at the higher temperatures remained virtually unchanged. Using TEM it is shown that the (0001) basal planes of the hexagonal 4H-SiC and Ta2C phases are aligned, and they were also parallel to the (111) plane in the cubic TaC with the [101] cubic direction being parallel to the hexagonal [2110] hexagonal direction. The Ta2C interlayer most likely is formed because its lattice parameter in the basel plane (3.103 Ǻ) is intermediate between that of the 4H-SiC (3.08 Ǻ) and the TaC (3.150 Ǻ). Given that Al.5Ga.5N is lattice matched to TaC, it could be an excellent substrate for the growth of GaN/AlGaN heterostructures.

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