Temperature dependence of the single-photon sensitivity of a quantum dot, optically gated, field-effect transistor

2013 ◽  
Vol 114 (9) ◽  
pp. 093103 ◽  
Author(s):  
E. J. Gansen ◽  
M. A. Rowe ◽  
S. D. Harrington ◽  
J. M. Nehls ◽  
S. M. Etzel ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Temperature Dependence ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Photon ◽  
Effect Transistor

Design and Characteristics Analysis of Single Photon Detector Based on Quantum-Dot Field Effect Transistor

2013 ◽  
Vol 40 (1) ◽  
pp. 0118001
Author(s):  
王红培 Wang Hongpei ◽  
王广龙 Wang Guanglong ◽  
邱鹏 Qiu Peng ◽  
高凤岐 Gao Fengqi ◽  
卢江雷 Lu Jianglei
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Photon ◽  
Photon Detector ◽  
Single Photon Detector ◽  
Characteristics Analysis ◽  
Effect Transistor

Operational Analysis of a Quantum Dot Optically Gated Field-Effect Transistor as a Single-Photon Detector

2007 ◽  
Vol 13 (4) ◽  
pp. 967-977 ◽  
Author(s):  
Eric J. Gansen ◽  
Mary A. Rowe ◽  
Marion B. Greene ◽  
Danna Rosenberg ◽  
Todd E. Harvey ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Photon ◽  
Photon Detector ◽  
Single Photon Detector ◽  
Operational Analysis ◽  
Effect Transistor

Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector

2014 ◽  
Vol 23 (10) ◽  
pp. 104209
Author(s):  
Yu Dong ◽  
Guang-Long Wang ◽  
Hong-Pei Wang ◽  
Hai-Qiao Ni ◽  
Jian-Hui Chen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Photon ◽  
Resonant Cavity ◽  
Photon Detector ◽  
Single Photon Detector ◽  
Effect Transistor

Partial Dissolution of Charge Order Phase Observed in -(BEDT-TTF)2PF6 Single Crystal Field Effect Transistor

2016 ◽  
Vol 16 (4) ◽  
pp. 3267-3272
Author(s):  
Masatoshi Sakai ◽  
Norifumi Moritoshi ◽  
Shigekazu Kuniyoshi ◽  
Hiroshi Yamauchi ◽  
Kazuhiro Kudo ◽  
...  
Keyword(s):  
Electric Field ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Conductance ◽  
Charge Order ◽  
Crystal Field Effect ◽  
Effect Transistor

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.

scholarly journals A tunable colloidal quantum dot photo field-effect transistor

2011 ◽  
Vol 99 (10) ◽  
pp. 101102 ◽  
Author(s):  
Subir Ghosh ◽  
Sjoerd Hoogland ◽  
Vlad Sukhovatkin ◽  
Larissa Levina ◽  
Edward H. Sargent
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Colloidal Quantum Dot ◽  
Effect Transistor
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