Intensive terahertz emission from GaSe0.91S0.09 under collinear difference frequency generation

2013 ◽  
Vol 103 (8) ◽  
pp. 081104 ◽  
Author(s):  
Jingguo Huang ◽  
Zhiming Huang ◽  
Jingchao Tong ◽  
Cheng Ouyang ◽  
Junhao Chu ◽  
...  
Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 336
Author(s):  
Atsushi Nakanishi ◽  
Shohei Hayashi ◽  
Hiroshi Satozono ◽  
Kazuue Fujita

We demonstrate spectroscopic imaging using a compact ultra-broadband terahertz semiconductor source with a high-power, mid-infrared quantum cascade laser. The electrically pumped monolithic source is based on intra-cavity difference-frequency generation and can be designed to achieve an ultra-broadband multi-mode terahertz emission spectrum extending from 1–4 THz without any external optical setup. Spectroscopic imaging was performed with three frequency bands, 2.0 THz, 2.5 THz and 3.0 THz, and as a result, this imaging technique clearly identified three different tablet components (polyethylene, D-histidine and DL-histidine). This method may be highly suitable for quality monitoring of pharmaceutical materials.


2013 ◽  
Vol 62 (12) ◽  
pp. 120704
Author(s):  
Huang Jing-Guo ◽  
Lu Jin-Xing ◽  
Zhou Wei ◽  
Tong Jing-Chao ◽  
Huang Zhi ◽  
...  

Nanophotonics ◽  
2018 ◽  
Vol 7 (11) ◽  
pp. 1795-1817 ◽  
Author(s):  
Kazuue Fujita ◽  
Seungyong Jung ◽  
Yifan Jiang ◽  
Jae Hyun Kim ◽  
Atsushi Nakanishi ◽  
...  

AbstractTerahertz quantum cascade laser (QCL) sources based on intra-cavity difference frequency generation are currently the only electrically pumped monolithic semiconductor light sources operating at room temperature in the 1–6-THz spectral range. Relying on the active regions with the giant second-order nonlinear susceptibility and the Cherenkov phase-matching scheme, these devices demonstrated drastic improvements in performance in the past several years and can now produce narrow-linewidth single-mode terahertz emission that is tunable from 1 to 6 THz with power output sufficient for imaging and spectroscopic applications. This paper reviews the progress of this technology. Recent efforts in wave function engineering using a new active region design based on a dual-upper-state concept led to a significant enhancement of the optical nonlinearity of the active region for efficient terahertz generation. The transfer of Cherenkov devices from their native semi-insulating InP substrates to high-resistivity silicon substrates resulted in a dramatic improvement in the outcoupling efficiency of terahertz radiation. Cherenkov terahertz QCL sources based on the dual-upper-state design have also been shown to exhibit ultra-broadband comb-like terahertz emission spectra with more than one octave of terahertz frequency span. The broadband terahertz QCL sources operating in continuous-wave mode produces the narrow inter-mode beat-note linewidth of 287 Hz, which indicates frequency comb operation of mid-infrared pumps and thus supports potential terahertz comb operation. Finally, we report the high-quality terahertz imaging obtained by a THz imaging system using terahertz QCL sources based on intra-cavity difference frequency generation.


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