>750 mV open circuit voltage measured on 50 μm thick silicon heterojunction solar cell

2013 ◽  
Vol 103 (5) ◽  
pp. 053511 ◽  
Author(s):  
Stanislau Y. Herasimenka ◽  
William J. Dauksher ◽  
Stuart G. Bowden
Keyword(s):  
Solar Cell ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Heterojunction Solar Cell ◽  
Silicon Heterojunction Solar Cell

Study on the improvement of the open-circuit voltage of NiOx/Si heterojunction solar cell

2021 ◽  
Vol 120 ◽  
pp. 111453
Author(s):  
Madani Labed ◽  
Nouredine Sengouga ◽  
Afak Meftah ◽  
Amjad Meftah ◽  
You Seung Rim
Keyword(s):  
Solar Cell ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Heterojunction Solar Cell

Enhancing the open circuit voltage of the SnS based heterojunction solar cell using NiO HTL

Solar Energy ◽  
2020 ◽  
Vol 207 ◽  
pp. 693-702 ◽  
Author(s):  
Shamim Ahmmed ◽  
Asma Aktar ◽  
Jaker Hossain ◽  
Abu Bakar Md. Ismail
Keyword(s):  
Solar Cell ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Heterojunction Solar Cell

A New Terthiophene-Thienopyrrolodione Copolymer-Based Bulk Heterojunction Solar Cell with High Open-Circuit Voltage

2012 ◽  
Vol 2 (11) ◽  
pp. 1397-1403 ◽  
Author(s):  
Jang Jo ◽  
Agnieszka Pron ◽  
Philippe Berrouard ◽  
Wei Lin Leong ◽  
Jonathan D. Yuen ◽  
...  
Keyword(s):  
Solar Cell ◽  
Open Circuit Voltage ◽  
Bulk Heterojunction ◽  
Open Circuit ◽  
Heterojunction Solar Cell ◽  
Bulk Heterojunction Solar Cell

scholarly journals Numerical Simulation Analysis of Ag Crystallite Effects on Interface of Front Metal and Silicon in the PERC Solar Cell

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 592
Author(s):  
Myeong Sang Jeong ◽  
Yonghwan Lee ◽  
Ka-Hyun Kim ◽  
Sungjin Choi ◽  
Min Gu Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Surface Recombination ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Metal Interface ◽  
Ag Crystallites ◽  
Recombination Velocity

In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell; hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘C to 950 ∘C. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. Simulations showed that the increase in the distribution of Ag crystallites and surface recombination velocity at the silicon-metal interface played an important role in the decrease of open-circuit voltage of the PERC solar cell at temperatures of 850–900 ∘C, whereas the damage caused by the emitter over fire was determined as the main cause of the voltage drop at 950 ∘C. These results are expected to serve as a steppingstone for further research on improvement in the silicon-metal interface properties of silicon-based solar cells and investigation on high-efficiency solar cells.

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