scholarly journals Influence of n-type versus p-type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes

2013 ◽  
Vol 103 (5) ◽  
pp. 053512 ◽  
Author(s):  
Yun Ji ◽  
Zi-Hui Zhang ◽  
Zabu Kyaw ◽  
Swee Tiam Tan ◽  
Zhen Gang Ju ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Type Versus ◽  
Multiple Quantum ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
P Type

The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

2011 ◽  
Vol 20 (9) ◽  
pp. 098503 ◽  
Author(s):  
Tai-Ping Lu ◽  
Shu-Ti Li ◽  
Kang Zhang ◽  
Chao Liu ◽  
Guo-Wei Xiao ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting

Systematical and Numerical Investigations on InGaN-Based Green Light-Emitting Diodes: Si-Doped Quantum Barriers, Engineered p-Electron Blocking Layer and AlGaN/GaN Structured p-Type Region

2020 ◽  
Vol 142 (3) ◽  
Author(s):  
Tie Li ◽  
Guan-Long Cao ◽  
Hong-Juan Xie ◽  
Jing-Qin Wang ◽  
Zi-Hui Zhang
Keyword(s):  
Quantum Wells ◽  
Barrier Height ◽  
Light Emitting Diodes ◽  
Hole Concentration ◽  
Green Light ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Si Doped ◽  
P Type

Abstract Here, we numerically prove that the severe polarization-induced electric field in the active region for [0001]-oriented InGaN-based green light-emitting diodes (LEDs) is reduced when heavily Si-doped GaN quantum barriers are adopted. However, the electron injection is accordingly sacrificed for the insufficient confinement capability of the p-type electron blocking layer (p-EBL). Hence, p-EBL structures with/without gradient AlN alloys are discussed to reduce the electron leakage, and the importance of the positive sheet polarization charges at the interface between the last quantum barrier (LQB) and the p-EBL on affecting the blocking barrier height for electrons is especially highlighted. Moreover, we also suggest utilizing specially designed p-AlGaN/p-GaN structure instead of p-GaN structure to serve as the p-type hole supplier, which is able to increase the kinetic energy of holes, thus assisting holes to overcome the energy band barrier height in p-EBL and increasing the hole concentration within the quantum wells.

Study on Injection Efficiency in InGaN/GaN Multiple Quantum Wells Blue Light Emitting Diodes

2008 ◽  
Vol 1 ◽  
pp. 021101 ◽  
Author(s):  
Lai Wang ◽  
Jiaxing Wang ◽  
Hongtao Li ◽  
Guangyi Xi ◽  
Yang Jiang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Injection Efficiency ◽  
Light Emitting

Control of Barrier Width in Perovskite Multiple Quantum Wells for High Performance Green Light–Emitting Diodes

2018 ◽  
Vol 7 (3) ◽  
pp. 1801575 ◽  
Author(s):  
Maotao Yu ◽  
Chang Yi ◽  
Nana Wang ◽  
Liangdong Zhang ◽  
Renmeng Zou ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Barrier Width ◽  
Light Emitting

Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells

2014 ◽  
Vol 115 (8) ◽  
pp. 083112 ◽  
Author(s):  
Zhi Li ◽  
Junjie Kang ◽  
Bo Wei Wang ◽  
Hongjian Li ◽  
Yu Hsiang Weng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Localization ◽  
Light Emitting
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