scholarly journals Interlayer thermal conductivity of rubrene measured by ac-calorimetry

2013 ◽  
Vol 114 (4) ◽  
pp. 043508 ◽  
Author(s):  
H. Zhang ◽  
J. W. Brill
1995 ◽  
Vol 416 ◽  
Author(s):  
Akikazu Maesono ◽  
Ronald. P. Tye

ABSTRACTMany applications of thin films, especially for electronics devices, require that these materials, which are often anisotropic, have a very high thermal conductivity as well as uniform areal properties to ensure that reproducible performance be attained. These factors necessitate that measurements of thermal transport properties are required both to provide absolute application values for different heat flow directions as well as to evaluate uniformity and homogeneity of a wafer. For diamond, the combination of a very high thermal conductivity with limited size and form of available specimen presents unique challenges to the experimentalist. As a result, a modification of the ac calorimeter method has been developed to evaluate the thermal diffusivity of thin films.Details of the technique will be provided together with examples of its use to evaluate thermal diffusivity and thermal conductivity of different CVD diamond film composites having thicknesses from 10µm to 600µm and free-standing films. In addition, results using this method will be compared. with those obtained by other techniques involved in a recent international round-robin measurements program designed to evaluate a potential standard method(s).


2003 ◽  
Vol 793 ◽  
Author(s):  
Kazuhiro Ito ◽  
Lanting Zhang ◽  
Katsuyuki Adachi ◽  
Masaharu Yamaguchi

ABSTRACTThermal conductivity and other thermoelectric properties were investigated on β-Zn4Sb3 and CoSb3 thin films. They are prepared by co-deposition of the specific sets of Zn, Sb and Co targets by RF magnetron sputtering. Thermal conductivity measurement was performed based on an AC calorimetry method using LaserPIT. The Zn4Sb3 thin films investigated are Zn-rich with respect to the stoichiometric composition. Their thermal conductivity decrement is proportional to the reciprocal film thickness. A nano-scale grain size in a ∼350 nm-thick film specimen gives arise to an almost 50% reduction in its thermal conductivity (∼0.5W/mK) at room temperature. Low electrical resistivity and high Seebeck coefficient can be achieved simultaneously in the film specimen with properly controlled thickness and microstructure. A ZT of 1.2 at ∼460K has been obtained for the ∼350nm thick Zn4Sb3 film specimen. The minimum thermal conductivity of about 1.1 W/mK was obtained in a ∼325 nm-thick CoSb3 film specimen at room temperature.


1981 ◽  
Vol 42 (C4) ◽  
pp. C4-931-C4-934 ◽  
Author(s):  
M. F. Kotkata ◽  
M.B. El-den

1981 ◽  
Vol 42 (C6) ◽  
pp. C6-893-C6-895
Author(s):  
M. Locatelli ◽  
R. Suchail ◽  
E. Zecchi
Keyword(s):  

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