scholarly journals Improved phase-change characteristics of Zn-doped amorphous Sb7Te3 films for high-speed and low-power phase change memory

2013 ◽  
Vol 103 (3) ◽  
pp. 031914 ◽  
Author(s):  
Guoxiang Wang ◽  
Xiang Shen ◽  
Qiuhua Nie ◽  
R. P. Wang ◽  
Liangcai Wu ◽  
...  
Keyword(s):  
Low Power ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Change Characteristics ◽  
Change Memory

Superlattice-like Ge 8 Sb 92 /Ge thin films for high speed and low power consumption phase change memory application

2014 ◽  
Vol 93 ◽  
pp. 4-7 ◽  
Author(s):  
Yifeng Hu ◽  
Xiaoyi Feng ◽  
Jiwei Zhai ◽  
Ting Wen ◽  
Tianshu Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Power Consumption ◽  
Low Power ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Low Power Consumption ◽  
Change Memory

Scandium doped Ge2Sb2Te5 for high-speed and low-power-consumption phase change memory

2018 ◽  
Vol 112 (13) ◽  
pp. 133104 ◽  
Author(s):  
Yong Wang ◽  
Yonghui Zheng ◽  
Guangyu Liu ◽  
Tao Li ◽  
Tianqi Guo ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Low Power Consumption ◽  
Change Memory

Ultra-high speed and low-power superlattice-like Sn 18 Sb 82 –SnSe 2 thin films for phase change memory applications

2016 ◽  
Vol 163 ◽  
pp. 20-23 ◽  
Author(s):  
Ruirui Liu ◽  
Zifang He ◽  
Jiwei Zhai ◽  
Sannian Song ◽  
Zhitang Song ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Power ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Ultra High Speed ◽  
Memory Applications ◽  
Change Memory

Nanosecond Switching in Superlattice-Like GeTe/Sb Thin Film for High Speed and Low Power Phase Change Memory Application

2016 ◽  
Vol 6 (1) ◽  
pp. P45-P48 ◽  
Author(s):  
Yifeng Hu ◽  
Xiaoqin Zhu ◽  
Hua Zou ◽  
Haipeng You ◽  
Liangjun Zhai ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Power ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Change Memory

Superlattice-like Ga40Sb60/Sb films with ultra-high speed and low power for phase change memory application

2016 ◽  
Vol 28 (4) ◽  
pp. 3806-3811 ◽  
Author(s):  
Hua Zou ◽  
Xiaoqin Zhu ◽  
Yifeng Hu ◽  
Yongxing Sui ◽  
Long Zheng ◽  
...  
Keyword(s):  
Low Power ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Ultra High Speed ◽  
Change Memory

Sb7Te3/Ge multilayer films for low power and high speed phase-change memory

2017 ◽  
Vol 32 (6) ◽  
pp. 065003
Author(s):  
Shiyu Chen ◽  
Weihua Wu ◽  
Jiwei Zhai ◽  
Sannian Song ◽  
Zhitang Song
Keyword(s):  
Low Power ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Multilayer Films ◽  
Change Memory

Simulation and Design of a Silicon Nanowire based Phase Change Memory Cell

2012 ◽  
Vol 1431 ◽  
Author(s):  
Ramin Banan Sadeghian ◽  
Yusuf Leblebici ◽  
Ali Shakouri
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Low Cost ◽  
Silicon Nanowire ◽  
Phase Change Memory ◽  
Random Access ◽  
Memory Cell ◽  
Oxide Thickness ◽  
Nanowire Diameter ◽  
Change Memory

ABSTRACTIn this work we present preliminary calculations and simulations to demonstrate feasibility of programming a nanoscale Phase Change Random Access Memory (PCRAM) cell by means of a silicon nanowire ballistic transistor (SNWBT). Memory cells based on ballistic transistors bear the advantage of having a small size and high-speed operation with low power requirements. A one-dimensional MOSFET model (FETToy) was used to estimate the output current of the nanowire as a function of its diameter. The gate oxide thickness was 1.5 nm, and the Fermi level at source was set to -0.32 eV. For the case of VDS = VGS = 1 V, when the nanowire diameter was increased from 1 to 60 nm, the output power density dropped from 109 to 106 W cm-2 , while the current increased from 20 to 90 μA. Finite element electro-thermal analysis were carried out on a segmented cylindrical phase-change memory cell made of Ge2Sb2Te5 (GST) chalcogenide, connected in series to the SNWBT. The diameter of the combined device, d, and the aspect ratio of the GST region were selected so as to achieve optimum heating of the GST. With the assumption that the bulk thermal conductivity of GST does not change significantly at the nanoscale, it was shown that for d = 24 nm, a ‘reset’ programming current of ID = 80 μA can heat the GST up to its melting point. The results presented herein can help in the design of low cost, high speed, and radiation tolerant nanoscale PCRAM devices.

Sign in / Sign up

Export Citation Format

Share Document