Diffusive capacitance in space charge limited organic diodes: Analysis of peak in capacitance-voltage characteristics

2013 ◽  
Vol 102 (25) ◽  
pp. 253303 ◽  
Author(s):  
Durgesh C. Tripathi ◽  
Y. N. Mohapatra
Keyword(s):  
Space Charge ◽  
Capacitance Voltage ◽  
Organic Diodes ◽  
Space Charge Limited

Impact of defect states on the capacitance voltage characteristics of space charge limited organic diodes, and determination of defect states

2021 ◽  
Vol 9 (14) ◽  
pp. 4903-4909
Author(s):  
Durgesh C. Tripathi ◽  
K. Sudheendra Rao ◽  
Y. N. Mohapatra
Keyword(s):  
Space Charge ◽  
Low Frequency ◽  
Defect States ◽  
Depletion Width ◽  
Capacitance Voltage ◽  
Voltage Dependent ◽  
Organic Diodes ◽  
Space Charge Limited

The capacitance rise in low frequency C–V curves originates due to diffusive storage of injected carriers within the bulk in the case of intrinsic devices, whereas a voltage dependent depletion width is the cause in the case of devices having traps.

scholarly journals Analytical Evaluation of the Ratio Between Injection and Space-Charge Limited Currents in Single Carrier Organic Diodes

2008 ◽  
Vol 55 (2) ◽  
pp. 674-680 ◽  
Author(s):  
Ángel Luis Alvarez ◽  
BelÉn Arredondo ◽  
Beatriz Romero ◽  
Xabier Quintana ◽  
Araceli GutiÉrrez-Llorente ◽  
...  
Keyword(s):  
Space Charge ◽  
Analytical Evaluation ◽  
Single Carrier ◽  
Organic Diodes ◽  
Space Charge Limited Currents ◽  
Space Charge Limited

Space-charge-limited current in GaAs

1966 ◽  
Vol 2 (7) ◽  
pp. 282
Author(s):  
A.M. Phahle ◽  
K.C. Kao ◽  
J.H. Calderwood
Keyword(s):  
Space Charge ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Study of Electron Transport in a-Si:H p-i-n Diodes: Use of the Transient Space-Charge-Limited-Current Technique

1995 ◽  
Vol 377 ◽  
Author(s):  
G. J. Adriaenssens ◽  
B. Yan ◽  
A. Eliat
Keyword(s):  
Space Charge ◽  
Conduction Band Edge ◽  
Time Range ◽  
Space Charge Limited Current ◽  
Transport Parameters ◽  
Limited Current ◽  
Emission Time ◽  
Time Regime ◽  
Carrier Extraction ◽  
Space Charge Limited

ABSTRACTA full and detailed transient space-charge-limited current (T-SCLC) study of a-Si:H p-i-n diodes has been carried out in the time range from 108s to 10s. In the short-time regime, general features of T-SCLC such as the current cusp and the carrier extraction period were observed, and related transport parameters were deduced. Electron emission from deep states was studied by measuring the current transients well beyond the extraction time. The emission time is thermally activated at temperatures higher than 250K and levels off at lower temperatures. The high temperature behaviour places the upper edge of the deep states at 0.42–0.52eV below the conduction band edge, and the attempt-to-escape frequency in the range of 1011-1013Hz. An observed shift of emission time with light intensity is attributed to defect relaxation.

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