Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

M. Ťapajna; M. Jurkovič; L. Válik; Š. Haščík; D. Gregušová; F. Brunner; E.-M. Cho; J. Kuzmík

doi:10.1063/1.4811754

Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4811754 ◽

2013 ◽

Vol 102 (24) ◽

pp. 243509 ◽

Cited By ~ 35

Author(s):

M. Ťapajna ◽

M. Jurkovič ◽

L. Válik ◽

Š. Haščík ◽

D. Gregušová ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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A Simple Gate-Dielectric Fabrication Process for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

IEEE Electron Device Letters ◽

10.1109/led.2012.2197370 ◽

2012 ◽

Vol 33 (7) ◽

pp. 997-999 ◽

Cited By ~ 27

Author(s):

Han-Yin Liu ◽

Bo-Yi Chou ◽

Wei-Chou Hsu ◽

Ching-Sung Lee ◽

Chiu-Sheng Ho

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Fabrication Process ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Material and device characterizations of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors with reactive-sputtered HfO2 gate dielectric

2006 64th Device Research Conference ◽

10.1109/drc.2006.305144 ◽

2006 ◽

Author(s):

Chang Liu ◽

Eng Chor ◽

Leng Tan

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04df03 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DF03 ◽

Cited By ~ 10

Author(s):

Joseph J. Freedsman ◽

Toshiharu Kubo ◽

S. Lawrence Selvaraj ◽

Takashi Egawa

Keyword(s):

Metal Oxide ◽

Breakdown Voltage ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Ga2O3 Gate Dielectric Layer Grown by Vapor Cooling Condensation System

Journal of Electronic Materials ◽

10.1007/s11664-021-08879-8 ◽

2021 ◽

Author(s):

Hsin-Ying Lee ◽

Ting-Wei Chang ◽

Ching-Ting Lee

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Dielectric Layer ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Bimodal gate-dielectric deposition for improved performance of AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/45/4/045105 ◽

2012 ◽

Vol 45 (4) ◽

pp. 045105 ◽

Cited By ~ 11

Author(s):

Liang Pang ◽

Kyekyoon (Kevin) Kim

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Improved Performance

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Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04df03 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DF03 ◽

Cited By ~ 5

Author(s):

Joseph J. Freedsman ◽

Toshiharu Kubo ◽

S. Lawrence Selvaraj ◽

Takashi Egawa

Keyword(s):

Metal Oxide ◽

Breakdown Voltage ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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GaN metal-oxide-semiconductor high-electron-mobility transistors using thermally evaporated SiO as the gate dielectric

Semiconductor Science and Technology ◽

10.1088/1361-6641/aad8d7 ◽

2018 ◽

Vol 33 (9) ◽

pp. 095023 ◽

Cited By ~ 1

Author(s):

Gengchang Zhu ◽

Yiming Wang ◽

Qian Xin ◽

Mingsheng Xu ◽

Xiufang Chen ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Evolution of field dependent carrier trapping during off-state degradation for GaN based metal oxide semiconductor high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.5044590 ◽

2018 ◽

Vol 124 (16) ◽

pp. 165704 ◽

Cited By ~ 2

Author(s):

Jaya Jha ◽

Bhanu B. Upadhyay ◽

Kuldeep Takhar ◽

Navneet Bhardwaj ◽

Swaroop Ganguly ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Carrier Trapping ◽

Electron Mobility Transistors ◽

Field Dependent

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Metal Oxide Semiconductor High Electron Mobility Transistors

Handbook for III-V High Electron Mobility Transistor Technologies ◽

10.1201/9780429460043-15 ◽

2019 ◽

pp. 391-402 ◽

Cited By ~ 1

Author(s):

D. K. Panda ◽

G. Amarnath ◽

T. R. Lenka

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with TiO2 gate dielectrics

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) ◽

10.1109/iciprm.2016.7528615 ◽

2016 ◽

Author(s):

Yu-Shyan Lin ◽

Chi-Che Lu

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectrics ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

Download Full-text