scholarly journals Measurement of interface-state-density distribution near conduction band at interface between atomic-layer-deposited Al2O3 and silicon-doped InAlN

2013 ◽  
Vol 102 (23) ◽  
pp. 231605 ◽  
Author(s):  
Masamichi Akazawa ◽  
Masahito Chiba ◽  
Takuma Nakano
Keyword(s):  
Density Distribution ◽  
Conduction Band ◽  
Atomic Layer ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Silicon Doped

Asymmetric Interface Densities on n and p Type GaN MOS Capacitors

2006 ◽  
Vol 527-529 ◽  
pp. 1525-1528
Author(s):  
W. Huang ◽  
T. Khan ◽  
T. Paul Chow
Keyword(s):  
Density Distribution ◽  
Valence Band ◽  
Conduction Band ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Plasma Enhanced Cvd ◽  
P Type

Both n-type and p-type GaN MOS capacitors with plasma-enhanced CVD-SiO2 as the gate oxide were characterized using both capacitance and conductance techniques. From a n type MOS capacitor, an interface state density of 3.8×1010/cm2-eV was estimated at 0.19eV near the conduction band and decreases deeper into the bandgap while from a p type MOS capacitor, an interface state density of 1.4×1011/cm2-eV 0.61eV above the valence band was estimated and decreases deeper into the bandgap. Unlike the symmetric interface state density distribution in Si, an asymmetric interface state density distribution with lower density near the conduction band and higher density near the valence band has been determined.

Interface State Density of Atomic Layer Deposited Al2O3onβ-Ga2O3

2018 ◽  
Vol 85 (7) ◽  
pp. 27-30 ◽  
Author(s):  
Chen Yi Su ◽  
Takuya Hoshii ◽  
Iriya Muneta ◽  
Hitoshi Wakabayashi ◽  
Kazuo Tsutsui ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Interface State ◽  
State Density ◽  
Interface State Density

Characterization of Wet Chemical Atomic Layer Etching of InGaAs

2021 ◽  
Vol 314 ◽  
pp. 95-98
Author(s):  
Tomoki Hirano ◽  
Kenya Nishio ◽  
Takashi Fukatani ◽  
Suguru Saito ◽  
Yoshiya Hagimoto ◽  
...  
Keyword(s):  
Surface Condition ◽  
Atomic Layer ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Etching Process ◽  
Wet Chemical ◽  
Oxide Removal ◽  
Atomic Layer Etching

In this work, we characterized the wet chemical atomic layer etching of an InGaAs surface by using various surface analysis methods. For this etching process, H2O2 was used to create a self-limiting oxide layer. Oxide removal was studied for both HCl and NH4OH solutions. Less In oxide tended to remain after the HCl treatment than after the NH4OH treatment, so the combination of H2O2 and HCl is suitable for wet chemical atomic layer etching. In addition, we found that repetition of this etching process does not impact on the oxide amount, surface roughness, and interface state density. Thus, nanoscale etching of InGaAs with no impact on the surface condition is possible with this method.

scholarly journals Nitrogen Passivation of the Interface States Near the Conduction Band Edge in 4H-Silicon Carbide

2000 ◽  
Vol 640 ◽  
Author(s):  
J. R. Williams ◽  
G. Y. Chung ◽  
C. C. Tin ◽  
K. McDonald ◽  
D. Farmer ◽  
...  
Keyword(s):  
Conduction Band ◽  
Interface State ◽  
Interface States ◽  
State Density ◽  
Interface State Density ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Breakdown Field ◽  
Inversion Mode ◽  
Passivation Process

ABSTRACTThis paper describes the development of a nitrogen-based passivation technique for interface states near the conduction band edge [Dit(Ec)] in 4H-SiC/SiO2. These states have been observed and characterized in several laboratories for n- and p-SiC since their existence was first proposed by Schorner, et al. [1]. The origin of these states remains a point of discussion, but there is now general agreement that these states are largely responsible for the lower channel mobilities that are reported for n-channel, inversion mode 4H-SiC MOSFETs. Over the past year, much attention has been focused on finding methods by which these states can be passivated. The nitrogen passivation process that is described herein is based on post-oxidation, high temperature anneals in nitric oxide. An NO anneal at atmospheric pressure, 1175°C and 200–400sccm for 2hr reduces the interface state density at Ec-E ≅0.1eV in n-4H-SiC by more than one order of magnitude - from > 3×1013 to approximately 2×1012cm−2eV−1. Measurements for passivated MOSFETs yield effective channel mobilities of approximately 30–35cm2/V-s and low field mobilities of around 100cm2/V-s. These mobilities are the highest yet reported for MOSFETs fabricated with thermal oxides on standard 4H-SiC and represent a significant improvement compared to the single digit mobilities commonly reported for 4H inversion mode devices. The reduction in the interface state density is associated with the passivation of carbon cluster states that have energies near the conduction band edge. However, attempts to optimize the the passivation process for both dry and wet thermal oxides do not appear to reduce Dit(Ec) below about 2×1012cm−2eV−1 (compared to approximately 1010cm−2eV−1 for passivated Si/SiO2). This may be an indication that two types of interface states exist in the upper half of the SiC band gap – one type that is amenable to passivation by nitrogen and one that is not. Following NO passivation, the average breakdown field for dry oxides on p-4H-SiC is higher than the average field for wet oxides (7.6MV/cm compared to 7.1MV/cm at room temperature). However, both breakdown fields are lower than the average value of 8.2MV/cm measured for wet oxide layers that were not passivated. The lower breakdown fields can be attributed to donor-like states that appear near the valence band edge during passivation.

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