Growth of silicon nanocrystallites in amorphous silicon carbide thin films by aluminum induced crystallization

2013 ◽  
Author(s):  
Arindam Kole ◽  
Partha Chaudhary
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Amorphous Silicon Carbide ◽  
Silicon Nanocrystallites ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

Structural relaxation of amorphous silicon carbide thin films in thermal annealing

2008 ◽  
Vol 516 (12) ◽  
pp. 3855-3861 ◽  
Author(s):  
Kun Xue ◽  
Li-Sha Niu ◽  
Hui-Ji Shi ◽  
Jiwen Liu
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Structural Relaxation ◽  
Amorphous Silicon Carbide

Silicon nanocrystals on amorphous silicon carbide alloy thin films: Control of film properties and nanocrystals growth

2012 ◽  
Vol 522 ◽  
pp. 136-144 ◽  
Author(s):  
Jérémy Barbé ◽  
Ling Xie ◽  
Klaus Leifer ◽  
Pascal Faucherand ◽  
Christine Morin ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Silicon Nanocrystals ◽  
Film Properties ◽  
Amorphous Silicon Carbide ◽  
Carbide Alloy

RF-PECVD deposition and optical properties of hydrogenated amorphous silicon carbide thin films

2014 ◽  
Vol 40 (7) ◽  
pp. 9791-9797 ◽  
Author(s):  
Enlong Chen ◽  
Guoping Du ◽  
Yu Zhang ◽  
Xiaomei Qin ◽  
Hongmei Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Silicon Carbide ◽  
Hydrogenated Amorphous

CW Argon-ion laser initiated aluminum induced crystallization of amorphous silicon thin films

2004 ◽  
Vol 808 ◽  
Author(s):  
Sampath K. Paduru ◽  
Husam H. Abu-safe ◽  
Hameed A. Naseem ◽  
Adnan Al-Shariah ◽  
William D. Brown
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Power Density ◽  
Threshold Power ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Power Densities ◽  
Argon Ion ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

ABSTRACTCW Argon-ion laser initiated aluminum induced crystallization (AIC) of RF magnetron sputtered amorphous silicon (a-Si) thin films has been investigated. It was found that lasers could be effectively used to initiate AIC process at very low threshold power densities. An argon-ion laser (λ=514.5 nm) was used to anneal Al/a-Si/glass structures with varying power densities ranging between 55 and 125 W/cm2 and exposure times ranging from 10 to 120 s. X-ray diffraction analysis showed the resulting films to be polycrystalline. The crystallization rate increased both with power density and exposure time. Environmental scanning electron microscopy (ESEM) analysis showed that the surface features change with increasing power density and irradiation time. A dendritic growth pattern was observed in the initial stages of interaction between the films. A strong crystalline Raman peak at around 520 cm-1 was observed in the Raman spectra of the crystallized samples.

Effect of deposition temperature on the properties of amorphous silicon carbide thin films

2006 ◽  
Vol 515 (2) ◽  
pp. 651-653 ◽  
Author(s):  
J. Huran ◽  
I. Hotový ◽  
J. Pezoltd ◽  
N.I. Balalykin ◽  
A.P. Kobzev
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Deposition Temperature ◽  
Amorphous Silicon Carbide

scholarly journals Investigations on phosphorous doped hydrogenated amorphous silicon carbide thin films deposited by a filtered cathodic vacuum arc technique for photo detecting applications

RSC Advances ◽  
2014 ◽  
Vol 4 (97) ◽  
pp. 54388-54397 ◽  
Author(s):  
R. K. Tripathi ◽  
O. S. Panwar ◽  
A. K. Kesarwani ◽  
Ishpal Rawal ◽  
B. P. Singh ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Vacuum Arc ◽  
Amorphous Silicon Carbide ◽  
Silicon Target ◽  
Filtered Cathodic Vacuum Arc ◽  
Hydrogenated Amorphous

This paper reports the growth and properties of phosphorous doped hydrogenated amorphous silicon carbide thin films deposited by a filtered cathodic vacuum arc technique using P doped solid silicon target as a cathode in the presence of acetylene gas.

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