Trap state controlled bipolar resistive switching effect and electronic transport in LaAlO3/Nb:SrTiO3 heterostructures

2013 ◽  
Vol 102 (23) ◽  
pp. 233501 ◽  
Author(s):  
X. L. Jiang ◽  
Y. G. Zhao ◽  
X. Zhang ◽  
M. H. Zhu ◽  
H. Y. Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Electronic Transport ◽  
Switching Effect ◽  
Trap State ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Effect

Bipolar resistive switching effect in Gd2O3 films for transparent memory application

2011 ◽  
Vol 88 (7) ◽  
pp. 1586-1589 ◽  
Author(s):  
Kou-Chen Liu ◽  
Wen-Hsien Tzeng ◽  
Kow-Ming Chang ◽  
Yi-Chun Chan ◽  
Chun-Chih Kuo
Keyword(s):  
Resistive Switching ◽  
Switching Effect ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Effect

Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect

2017 ◽  
Vol 111 (11) ◽  
pp. 113506 ◽  
Author(s):  
Caihong Jia ◽  
Xiaoqian Yin ◽  
Guang Yang ◽  
Yonghui Wu ◽  
Jiachen Li ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Resistive Switching ◽  
Switching Effect ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Effect

Resistive switching effect of Ag/MoS2/FTO device

2015 ◽  
Vol 08 (01) ◽  
pp. 1550010 ◽  
Author(s):  
Bai Sun ◽  
Wenxi Zhao ◽  
Yonghong Liu ◽  
Peng Chen
Keyword(s):  
Resistive Switching ◽  
Electric Pulse ◽  
Metal Structure ◽  
Switching Behavior ◽  
Switching Effect ◽  
Bipolar Resistive Switching ◽  
Resistance Change ◽  
Non Volatile Memory ◽  
State Resistance ◽  
Resistive Switching Effect

The electric-pulse-driven resistance change of metal/oxides/metal structure, which is called resistive switching effect, is a fascinating phenomenon for the development of next generation non-volatile memory. In this work, an outstanding bipolar resistive switching behavior of Ag / MoS 2/fluorine-doped tin oxide (FTO) device is demonstrated. The device can maintain superior reversible stability over 100 cycles with an OFF/ON-state resistance ratio of about 103 at room temperature.

Bipolar resistive switching effect in laser-induced crystallization AgInSbTe films

Optik ◽  
2019 ◽  
Vol 180 ◽  
pp. 271-275 ◽  
Author(s):  
FengXiao Zhai ◽  
Kun Yang ◽  
Donglin Wang ◽  
Sujuan Liu ◽  
Nanan Liu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Effect ◽  
Bipolar Resistive Switching ◽  
Induced Crystallization ◽  
Resistive Switching Effect

Multi-stage switching phenomenon in ultra-thin Ag films embedded into SrCoO3 multilayer films constructed resistive switching memory devices

2018 ◽  
Vol 11 (02) ◽  
pp. 1850038 ◽  
Author(s):  
Shuangsuo Mao ◽  
Xuejiao Zhang ◽  
Bai Sun ◽  
Bing Li ◽  
Shouhui Zhu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Multilayer Films ◽  
Text Structure ◽  
Switching Effect ◽  
Access Memory ◽  
Multi Stage ◽  
Switching Phenomenon ◽  
Resistance Random Access Memory ◽  
Resistive Switching Effect

In this work, Ti and SrCoO3 (SCO) have been used for preparing the resistance random access memory (RRAM) with Ti/(SCO/Ag)[Formula: see text]/SCO/Ti ([Formula: see text], 1, 2, 3) structures. It is found that the as-prepared device with Ti/SCO/Ti ([Formula: see text]) structure represents the nonobvious resistive switching effect. However, it displays a more obvious resistive switching effect in the Ti/SCO/Ag/SCO/Ti ([Formula: see text]) device. In particular, a multi-stage switching phenomenon is observed when ultra-thin Ag films was embedded into SrCoO3 multilayer films. Finally, the multi-stage switching effect is explained by the model of conductive filaments formed step-by-step.

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