scholarly journals Lattice mismatch accommodation via oxygen vacancy ordering in epitaxial La0.5Sr0.5CoO3-δ thin films

APL Materials ◽  
2013 ◽  
Vol 1 (1) ◽  
pp. 012105 ◽  
Author(s):  
J. Gazquez ◽  
Shameek Bose ◽  
M. Sharma ◽  
M. A. Torija ◽  
S. J. Pennycook ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Vacancy ◽  
Lattice Mismatch ◽  
Vacancy Ordering

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

Impact of stress on oxygen vacancy ordering in epitaxial (La0.5Sr0.5)CoO3−∂ thin films

2003 ◽  
Vol 82 (20) ◽  
pp. 3427-3429 ◽  
Author(s):  
Dmitri O. Klenov ◽  
Wolfgang Donner ◽  
Brendan Foran ◽  
Susanne Stemmer
Keyword(s):  
Thin Films ◽  
Oxygen Vacancy ◽  
Vacancy Ordering

Thickness Dependence of Oxygen Vacancy Ordering in Strained LaCoO3–x Thin Films

2020 ◽  
Vol 124 (23) ◽  
pp. 12492-12501
Author(s):  
Ningbin Zhang ◽  
Xianhui Tian ◽  
Yinlian Zhu ◽  
Yujia Wang ◽  
Yunlong Tang ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Vacancy ◽  
Thickness Dependence ◽  
Vacancy Ordering

Oxygen Vacancy Ordering Modulation of Magnetic Anisotropy in Strained LaCoO3–x Thin Films

2018 ◽  
Vol 10 (44) ◽  
pp. 38230-38238 ◽  
Author(s):  
Ningbin Zhang ◽  
Yinlian Zhu ◽  
Da Li ◽  
Desheng Pan ◽  
Yunlong Tang ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Vacancy ◽  
Magnetic Anisotropy ◽  
Vacancy Ordering

Oxygen vacancy ordering in epitaxial La0.5Sr0.5CoO3−∂ thin films on (001) LaAlO3

2001 ◽  
Vol 90 (7) ◽  
pp. 3319-3324 ◽  
Author(s):  
Susanne Stemmer ◽  
Allan J. Jacobson ◽  
X. Chen ◽  
A. Ignatiev
Keyword(s):  
Thin Films ◽  
Oxygen Vacancy ◽  
Vacancy Ordering

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

Oxygen vacancy mediated room temperature ferromagnetism in Cu-doped LiNbO3 thin films

2021 ◽  
Vol 527 ◽  
pp. 167775
Author(s):  
Xiaodong Zhou ◽  
Erlei Wang ◽  
Xiaodong Lao ◽  
Yongmei Wang ◽  
Honglei Yuan
Keyword(s):  
Thin Films ◽  
Oxygen Vacancy ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism
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