scholarly journals Energy-band alignment of II-VI/Zn3P2 heterojunctions from x-ray photoemission spectroscopy

2013 ◽  
Vol 113 (20) ◽  
pp. 203705 ◽  
Author(s):  
Jeffrey P. Bosco ◽  
David O. Scanlon ◽  
Graeme W. Watson ◽  
Nathan S. Lewis ◽  
Harry A. Atwater
2014 ◽  
Vol 90 (11) ◽  
Author(s):  
C. Lenser ◽  
A. Köhl ◽  
M. Patt ◽  
C. M. Schneider ◽  
R. Waser ◽  
...  

2008 ◽  
Vol 93 (9) ◽  
pp. 092907 ◽  
Author(s):  
Kuo-Hsing Kao ◽  
Shiow-Huey Chuang ◽  
Woei-Cherng Wu ◽  
Tien-Sheng Chao ◽  
Jian-Hao Chen ◽  
...  

2009 ◽  
Vol 106 (4) ◽  
pp. 043709 ◽  
Author(s):  
J. B. You ◽  
X. W. Zhang ◽  
H. P. Song ◽  
J. Ying ◽  
Y. Guo ◽  
...  

2021 ◽  
Vol 103 (23) ◽  
Author(s):  
M. Stübinger ◽  
J. Gabel ◽  
P. Scheiderer ◽  
M. Zapf ◽  
M. Schmitt ◽  
...  

MRS Advances ◽  
2017 ◽  
Vol 2 (53) ◽  
pp. 3157-3162 ◽  
Author(s):  
Takehiko Nagai ◽  
Shinho Kim ◽  
Hitoshi Tampo ◽  
Kang Min Kim ◽  
Hajime Shibata ◽  
...  

ABSTRACTWe determined that the conduction band offset (CBO) and the valence band offset (VBO) at the CdS/ Cu2ZnSnSe4 (CZTSe) heterointerface are +0.56 and +0.89eV, respectively, by using X-ray photoemission spectroscopy (XPS), ultraviolet photoemission spectroscopy (UPS) and inversed photoemission spectroscopy (IPES). A positive CBO value, so-called “spike” structure, means that the position of conduction band becomes higher than that of absorber layer. The evaluated CBO of +0.56 eV suggests that the conduction band alignment at CdS/CZTSe interface is enough to become an electron barrier. Despite such a large spike structure in the conduction band at the interface, a conversion efficiency of 8.7 % could be obtained for the CdS/CZTSe heterojunction solar cells.


2019 ◽  
Vol 28 (8) ◽  
pp. 087301
Author(s):  
Yan Zhao ◽  
Hong-Bu Yin ◽  
Ya-Jun Fu ◽  
Xue-Min Wang ◽  
Wei-Dong Wu

2017 ◽  
Vol 409 ◽  
pp. 71-76 ◽  
Author(s):  
Qian Wang ◽  
Xinhong Cheng ◽  
Li Zheng ◽  
Peiyi Ye ◽  
Menglu Li ◽  
...  

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