Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate

2013 ◽  
Vol 102 (19) ◽  
pp. 192107 ◽  
Author(s):  
Z. Li ◽  
J. Waldron ◽  
T. Detchprohm ◽  
C. Wetzel ◽  
R. F. Karlicek ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Sapphire Substrate ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Electron ◽  
High Electron Mobility ◽  
Light Emitting ◽  
Electron Mobility Transistors
Sign in / Sign up

Export Citation Format

Share Document