Tuning near field radiation by doped silicon

2013 ◽  
Vol 102 (18) ◽  
pp. 183114 ◽  
Author(s):  
Jiawei Shi ◽  
Pengfei Li ◽  
Baoan Liu ◽  
Sheng Shen
Keyword(s):  
Near Field ◽  
Doped Silicon ◽  
Field Radiation

Near-Field Radiation Calculated With an Improved Dielectric Function Model for Doped Silicon

2008 ◽  
Author(s):  
S. Basu ◽  
B. J. Lee ◽  
Z. M. Zhang
Keyword(s):  
Energy Transfer ◽  
Dielectric Function ◽  
Near Field ◽  
Silicon Surfaces ◽  
Function Model ◽  
Fluctuation Dissipation ◽  
Doped Silicon ◽  
Energy Conversion Systems ◽  
Field Radiation ◽  
Vacuum Gap

This paper describes a theoretical investigation of near-field radiative heat transfer between doped silicon surfaces separated by a vacuum gap. Using an improved dielectric function model for heavily doped silicon, along with fluctuation-dissipation theorem, and dyadic Green’s function, the present authors calculated the energy transfer between the doped silicon surfaces near room temperature. The effects of doping level, polarization, and width of the vacuum gap on the overall radiative transfer were investigated. It was observed that increase in the doping concentration of the emitter does not necessarily enhance the energy transfer in the near field. The energy-streamline method was used to model the lateral shift of the energy pathway, which is the trace of the Poynting vectors in the vacuum gap. The analysis performed in this study may facilitate the understanding of near-field radiation for applications such as thermal management in nanoelectronics, energy conversion systems, and nanothermal manufacturing.

Tuning Near Field Radiation by Doped Silicon

2013 ◽  
Author(s):  
Jiawei Shi ◽  
Sheng Shen
Keyword(s):  
Silicon Dioxide ◽  
Theoretical Calculation ◽  
Carrier Concentration ◽  
Tuning Range ◽  
Near Field ◽  
Bulk Silicon ◽  
Doped Silicon ◽  
Theoretical Predictions ◽  
Field Radiation ◽  
Radiation Measurements

In this letter, we demonstrate theoretically and experimentally that bulk silicon can be employed to overcome the challenge of tuning near field radiation. Theoretical calculation shows that the nanoscale radiation between bulk silicon and silicon dioxide can be tuned by changing the carrier concentration of silicon. Near field radiation measurements are carried out on multiple bulk silicon samples with different doping concentrations. The measured near field conductance agrees well with theoretical predictions, which demonstrates a tuning range from 2 nW/K to 6 nW/K at a gap of ∼60 nm.

Near-Field Radiation Calculated With an Improved Dielectric Function Model for Doped Silicon

2009 ◽  
Vol 132 (2) ◽  
Author(s):  
S. Basu ◽  
B. J. Lee ◽  
Z. M. Zhang
Keyword(s):  
Dielectric Function ◽  
Local Density ◽  
Near Field ◽  
Silicon Surfaces ◽  
Function Model ◽  
Doped Silicon ◽  
Field Radiation ◽  
Heavily Doped ◽  
Poynting Vectors ◽  
Vacuum Gap

This paper describes a theoretical investigation of near-field radiative heat transfer between doped silicon surfaces separated by a vacuum gap. An improved dielectric function model for heavily doped silicon is employed. The effects of doping level, polarization, and vacuum gap width on the spectral and total radiative transfer are studied based on the fluctuational electrodynamics. It is observed that increasing the doping concentration does not necessarily enhance the energy transfer in the near-field. The energy streamline method is used to model the lateral shift of the energy pathway, which is the trace of the Poynting vectors in the vacuum gap. The local density of states near the emitter is calculated with and without the receiver. The results from this study can help improve the understanding of near-field radiation for applications such as thermophotovoltaic energy conversion, nanoscale thermal imaging, and nanothermal manufacturing.

Reconstruct the PWM Signal of Switching Power Supplies from the Near Field Radiation

2013 ◽  
Vol 718-720 ◽  
pp. 1792-1796
Author(s):  
Zhong Qun Li ◽  
Kai Xie ◽  
Ying Hao Ye ◽  
Rong Bin Guo ◽  
Xu Fei Wang
Keyword(s):  
Pulse Width Modulation ◽  
Signal Reconstruction ◽  
Near Field ◽  
Buck Converter ◽  
Power Supplies ◽  
Switching Converters ◽  
Switching Power ◽  
Magnetic Components ◽  
Field Radiation ◽  
Switching Power Supplies

A non-contact testing method is proposed for encapsulation treated or insulation coated switching power supplies, which is implemented by reconstructing the pulse width modulation (PWM) signal of switching converters from the near field radiation of magnetic components. The radiation pattern of a buck converter is investigated, and the magnetic field sensing probe and PWM signal reconstruction circuit are also illustrated. The reconstruction testing is carried out on a buck converter; the duty cycle error of the reconstructed PWM signal is less than 0.2%, which validates the proposed method.

A new method to calculate near-field radiation excited by heterogeneous fault rupture

2007 ◽  
Vol 20 (6) ◽  
pp. 597-604
Author(s):  
Xue-feng Shang ◽  
Qi-ming Liu ◽  
Hai-ming Zhang ◽  
Xiao-fei Chen
Keyword(s):  
Near Field ◽  
New Method ◽  
Fault Rupture ◽  
Field Radiation

Circularly polarized localized near-field radiation at the nanoscale

2009 ◽  
Vol 99 (1-2) ◽  
pp. 67-74 ◽  
Author(s):  
E. Öğüt ◽  
G. Kızıltaş ◽  
K. Şendur
Keyword(s):  
Near Field ◽  
Circularly Polarized ◽  
Field Radiation

Application Conditions of Effective Medium Theory in Near-Field Radiative Heat Transfer Between Multilayered Metamaterials

2014 ◽  
Vol 136 (9) ◽  
Author(s):  
X. L. Liu ◽  
T. J. Bright ◽  
Z. M. Zhang
Keyword(s):  
Heat Transfer ◽  
Radiative Heat Transfer ◽  
Radiative Heat ◽  
Effective Medium Theory ◽  
Near Field ◽  
Effective Medium ◽  
Medium Theory ◽  
Metal Metal ◽  
Doped Silicon ◽  
Silicon And Germanium

This work addresses the validity of the local effective medium theory (EMT) in predicting the near-field radiative heat transfer between multilayered metamaterials, separated by a vacuum gap. Doped silicon and germanium are used to form the metallodielectric superlattice. Different configurations are considered by setting the layers adjacent to the vacuum spacer as metal–metal (MM), metal–dielectric (MD), or dielectric–dielectric (DD) (where M refers to metallic doped silicon and D refers to dielectric germanium). The calculation is based on fluctuational electrodynamics using the Green's function formulation. The cutoff wave vectors for surface plasmon polaritons (SPPs) and hyperbolic modes are evaluated. Combining the Bloch theory with the cutoff wave vector, the application condition of EMT in predicting near-field radiative heat transfer is presented quantitatively and is verified by exact calculations based on the multilayer formulation.

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