Low-voltage driven ∼1.54 μm electroluminescence from erbium-doped ZnO/p+-Si heterostructured devices: Energy transfer from ZnO host to erbium ions

2013 ◽  
Vol 102 (18) ◽  
pp. 181111 ◽  
Author(s):  
Yang Yang ◽  
Yunpeng Li ◽  
Luelue Xiang ◽  
Xiangyang Ma ◽  
Deren Yang
Keyword(s):  
Energy Transfer ◽  
Low Voltage ◽  
Erbium Ions ◽  
Erbium Doped ◽  
Doped Zno

Photoluminescence Study of Energy Transfer Processes in Erbium Doped AlxGal−xAs Grown by MBE

1993 ◽  
Vol 301 ◽  
Author(s):  
Tong Zhang ◽  
J. Sun ◽  
N.V. Edwards ◽  
D.E. Moxey ◽  
R.M. Kolbas ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Energy Levels ◽  
Coupling Efficiency ◽  
Thermal Quenching ◽  
Energy Bands ◽  
Doped Semiconductors ◽  
Co Doping ◽  
Erbium Ions ◽  
Erbium Doped ◽  
First Time

ABSTRACTSharp photoluminescence from the intra-4f shell of Er3+ is observed from erbium doped AlxGal-xAs (0 ≤x ≤ 1) grown by molecular beam epitaxy. The intensity of the luminescence from the erbium is strongly dependent on the aluminum composition with a maximum at x ≈ 0.6. We will present a model that explains the variation in intensity based on the energy transfer coupling efficiency between the host semiconductor and the optically active erbium ions. The coupling efficiency is dominated by the alignment or misalignment of the erbium energy levels with the energy bands of the host semiconductor and by the excess carrier lifetime in the host. The data and model, which are presented here for the first time, are consistent with our previous work on the effects of co-doping with Be or Si and with other workers' measurements of thermal quenching in rare earth doped semiconductors.

Luminescence of Er-doped ZnO Films: Effects of Thermal Annealing and Doping Concentration

2007 ◽  
Vol 1035 ◽  
Author(s):  
Zhengda Pan ◽  
S H Morgan ◽  
A Ueda ◽  
R Aga ◽  
A Steigerwald ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Thermal Annealing ◽  
Annealed Film ◽  
Fiber Amplifier ◽  
Fused Silica ◽  
Zno Films ◽  
Essential Property ◽  
Erbium Doped Fiber Amplifier ◽  
Nano Crystalline ◽  
Erbium Doped

AbstractPhotoluminescence (PL) of erbium-doped zinc oxide films with nano-sized grains was studied. The films were grown on silicon (100) and fused silica substrates using e-beam evaporation. The evaporating targets used were sintered pellets of ZnO and Er2O3 mixtures with two different Er concentrations. The films were subsequently annealed at 700 °C in air for an hour. PL was measured at two excitation wavelengths, 325 and 488 nm. The 325 nm is used for exciting the host semiconductor ZnO and 488 nm is used for directly exciting Er3+ ions in the ZnO host. Strong Er3+ luminescence of 4S3/2 → 4I15/2 and 4F9/2 → 4I15/2 transitions was observed from annealed film with 4.0 % Er2O3 concentration using either 325 or 488 nm excitation. With 325 nm excitation, the Er3+ luminescence observed is attributed to energy transfer from the excitons in ZnO host to the Er3+ ions doped. The effective energy transfer from ZnO host to the doped Er3+ ions is an essential property for the realization of actual current-injection opto-electronic devices operating at wavelengths of Er3+ emission, for example, at 1.54 μm for the erbium-doped fiber amplifier (EDFA). Our PL results indicate that thermal annealing plays an important role for optically activating the doped Er3+ ions in ZnO nano-crystalline grains of the film.

scholarly journals In-fiber measurement of erbium-doped ZBLAN ⁴I13/2 state energy transfer parameter

2020 ◽  
Author(s):  
Jillian Moffatt ◽  
Georgios Tsiminis ◽  
Elizaveta Klantsataya ◽  
Ori Henderson-Sapir ◽  
Barnaby Smith ◽  
...  
Keyword(s):  
Energy Transfer ◽  
State Energy ◽  
Transfer Parameter ◽  
Erbium Doped

The study on crystal defects-involved energy transfer process of Eu3+ doped ZnO lattice

2014 ◽  
Vol 129 ◽  
pp. 65-67 ◽  
Author(s):  
Lei Yang ◽  
Zhongcheng Jiang ◽  
Jiazhang Dong ◽  
Anlian Pan ◽  
Xiujuan Zhuang
Keyword(s):  
Energy Transfer ◽  
Transfer Process ◽  
Energy Transfer Process ◽  
Crystal Defects ◽  
Doped Zno

Judd-Ofelt Parameters of Erbium Doped Zinc Phosphate Glass Containing Natural Ferrite Oxide Nanoparticles

2019 ◽  
Vol 290 ◽  
pp. 41-45
Author(s):  
Puzi Anigrahawati ◽  
M.R. Sahar ◽  
Sib Krishna Ghoshal
Keyword(s):  
Phosphate Glass ◽  
Zinc Phosphate ◽  
Oxide Nanoparticles ◽  
X Ray Diffraction ◽  
X Ray ◽  
Erbium Ions ◽  
Intensity Parameters ◽  
Zinc Phosphate Glass ◽  
Erbium Doped ◽  
Quenching Method

Erbium ions (Er3+) doped zinc phosphate glass system with varying contents of natural ferrite (Fe3O4) nanoparticles were prepared using melt quenching method. The glass is characterized by x-ray diffraction (XRD) and UV-VIS NIR spectrometer. It is observed that the amorphous nature of the glass is confirmed by x-ray diffraction. The absorption spectra of the glass are recorded in the UV-Visible in the range of 400-1600 nm. The UV-VIS NIR spectra reveal ten absorption peaks centered at 376, 406, 420, 486, 522, 546, 652, 798, 976 and 1534 nm, correspond to the transitions from the ground state 4I15/2 to higher 4I13/2, 4I11/2, 4I9/2, 4F9/2, 4S3/2, 2H11/2, 4F7/2, 4F3/2, 2H9/2, 4G11/2 levels, respectively. Effects of natural ferrite oxide nanoparticles on the absorption and emission properties of the synthesized glasses were analyzed via Judd-Ofelt (J-O) theory. The J-O intensity-parameters (W2, W4, W6) analysis demonstrate a significant increase of spectroscopic quality factors.Keywords: Fe3O4 NPs, Absorption, Judd-Ofelt.

Sign in / Sign up

Export Citation Format

Share Document