Top oxide thickness dependence of remote phonon and charged impurity scattering in top-gated graphene

2013 ◽  
Vol 102 (18) ◽  
pp. 183506 ◽  
Author(s):  
Zhun-Yong Ong ◽  
Massimo V. Fischetti
Keyword(s):  
Impurity Scattering ◽  
Oxide Thickness ◽  
Thickness Dependence ◽  
Charged Impurity ◽  
Charged Impurity Scattering

scholarly journals Charged impurity scattering in bilayer graphene

2010 ◽  
Vol 82 (4) ◽  
Author(s):  
Shudong Xiao ◽  
Jian-Hao Chen ◽  
Shaffique Adam ◽  
Ellen D. Williams ◽  
Michael S. Fuhrer
Keyword(s):  
Impurity Scattering ◽  
Bilayer Graphene ◽  
Charged Impurity ◽  
Charged Impurity Scattering

scholarly journals Theory of charged impurity scattering in two-dimensional graphene

2009 ◽  
Vol 149 (27-28) ◽  
pp. 1072-1079 ◽  
Author(s):  
S. Adam ◽  
E.H. Hwang ◽  
E. Rossi ◽  
S. Das Sarma
Keyword(s):  
Impurity Scattering ◽  
Two Dimensional ◽  
Charged Impurity ◽  
Charged Impurity Scattering

scholarly journals The scattering time of electrons in a GaAs/InGaAs/GaAs quantum well including temperature and exchange-correlation effects

2020 ◽  
Vol 3 (3) ◽  
Author(s):  
Truong Van Tuan ◽  
Nguyen Quoc Khanh ◽  
Vo Van Tai
Keyword(s):  
Surface Roughness ◽  
Relaxation Time ◽  
Quantum Well ◽  
Impurity Scattering ◽  
Correlation Effects ◽  
Charged Impurity ◽  
Exchange Correlation ◽  
Local Field Correction ◽  
Quantum Well Width ◽  
Charged Impurity Scattering

The ratio of the scattering and single-particle relaxation time of a quasi-two-dimensional electron gas (Q2DEG) in a finite lattice-mismatched GaAs/InGaAs/GaAs quantum well was investigate at zero and finite temperatures, taking into account the exchange-correlation effects via a local-field correction with three approximations for the LFC, G = 0, GH, and GGA. We studied the dependence of the surface roughness, roughness-induced piezoelectric, remote and homogenous background charged impurity scattering on the carrier density and quantum well width. In the case of zero temperature and Hubbard local-field correction our results reduced to those of different theoretical calculations. At low density, the exchange-correlation effects depend strongly on the ratio τt/τs. While at high density many-body effects due to exchange and correlation considerably modified the ratio of the scattering and single-particle relaxation time. We found that, for densities and temperatures considered T = 0,3TF in this study, the temperature affected weakly on the time ratio for four scatterings. Furthermore, with the change of quantum well width, the effect of LFC and temperatures act on the ratio τt/τs are negligible for the roughness-induced piezoelectric and remote charged impurity scattering, and are notable for the surface roughness and homogenous background charged impurity scattering.

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