scholarly journals Quantum spin/valley Hall effect and topological insulator phase transitions in silicene

2013 ◽  
Vol 102 (16) ◽  
pp. 162412 ◽  
Author(s):  
M. Tahir ◽  
A. Manchon ◽  
K. Sabeeh ◽  
U. Schwingenschlögl
Keyword(s):  
Phase Transitions ◽  
Hall Effect ◽  
Topological Insulator ◽  
Quantum Spin ◽  
Valley Hall Effect

Photoinduced quantum spin/valley Hall effect and its electrical manipulation in silicene

2017 ◽  
Vol 121 (20) ◽  
pp. 205106 ◽  
Author(s):  
Hairui Bao ◽  
Wenhu Liao ◽  
Xincheng Zhang ◽  
Hong Yang ◽  
Xuexian Yang ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Spin ◽  
Electrical Manipulation ◽  
Valley Hall Effect

scholarly journals Quantum spin-valley Hall effect in AB-stacked bilayer silicene

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Kyu Won Lee ◽  
Cheol Eui Lee
Keyword(s):  
Hall Effect ◽  
Density Functional ◽  
Tight Binding ◽  
Quantum Spin ◽  
Chern Number ◽  
Antiferromagnetic Order ◽  
Gradual Change ◽  
Edge States ◽  
Binding Model ◽  
Valley Hall Effect

AbstractOur density functional theory calculations show that while AB-stacked bilayer silicene has a non-quantized spin-valley Chern number, there exist backscattering-free gapless edge states within the bulk gap, leading to a quantum spin-valley Hall effect. Using a tight-binding model for a honeycomb bilayer, we found that the interlayer potential difference and the staggered AB-sublattice potential lead to abrupt and gradual change of the valley Chern number from a quantized value to zero, respectively, while maintaining backscattering-free gapless edge states if the valley Chern number is not too close to zero. Under an inversion symmetry-breaking potential in the form of the staggered AB-sublattice potential, such as an antiferromagnetic order and a hexagonal diatomic sheet, a finite but non-quantized (spin-)valley Chern number can correspond to a quantum (spin-)valley Hall insulator.

scholarly journals A scheme to realize the quantum spin-valley Hall effect in monolayer graphene

Carbon ◽  
2016 ◽  
Vol 110 ◽  
pp. 304-312 ◽  
Author(s):  
S.K. Firoz Islam ◽  
Colin Benjamin
Keyword(s):  
Hall Effect ◽  
Quantum Spin ◽  
Monolayer Graphene ◽  
Valley Hall Effect

scholarly journals Spin-layer locking induced second-order nonlinear effect in centrosymmetric crystals

2020 ◽  
Author(s):  
Yanchong Zhao ◽  
Luojun Du ◽  
Jing Liang ◽  
Mohammad Bahramy ◽  
Mingwei Yang ◽  
...  
Keyword(s):  
Hall Effect ◽  
First Principles ◽  
Nonlinear Effect ◽  
Quantum Spin ◽  
Second Order ◽  
Inversion Symmetry ◽  
First Principles Calculations ◽  
Quantum Spin Hall Effect ◽  
Valley Hall Effect ◽  
Insight Into

Abstract According to the generally accepted nonlinear principles, second-order nonlinear effect (SONE) is strongly inhibited by the crystalline symmetries and thus can manifest only in non-centrosymmetric materials with broken global spatial inversion symmetry. In stark contrast, here we report the observation of direct-current (DC) related SONE, including circular and linear photogalvanic effects, in centrosymmetric bilayer and multilayer MoS2. In conjunction with relativistic first-principles calculations, we uncover that the observed DC-related SONE in inversion-symmetric MoS2 results from the localized electronic states and the locking of spin with the layer and valley pseudospins. Our results provide a new insight into nonlinear physics and would be applicable to other phenomena thus far believed to occur only in non-centrosymmetric systems, such as quantum spin Hall effect, valley Hall effect, piezoelectricity and unconventional Ising superconductivity.

Room temperature electrically pumped topological insulator laser based on quantum spin Hall effect

2021 ◽  
Author(s):  
Jae-Hyuck Choi ◽  
William E. Hayenga ◽  
Yuzhou G. N. Liu ◽  
Midya Parto ◽  
Babak Bahari ◽  
...  
Keyword(s):  
Hall Effect ◽  
Topological Insulator ◽  
Room Temperature ◽  
Quantum Spin ◽  
Spin Hall Effect ◽  
Quantum Spin Hall Effect ◽  
Electrically Pumped ◽  
Quantum Spin Hall
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