scholarly journals Low frequency resistance and critical current fluctuations in Al-based Josephson junctions

2013 ◽  
Vol 102 (14) ◽  
pp. 142602 ◽  
Author(s):  
C. D. Nugroho ◽  
V. Orlyanchik ◽  
D. J. Van Harlingen
2012 ◽  
Vol 101 (9) ◽  
pp. 092601 ◽  
Author(s):  
S. M. Anton ◽  
C. D. Nugroho ◽  
J. S. Birenbaum ◽  
S. R. O’Kelley ◽  
V. Orlyanchik ◽  
...  

Author(s):  
Francesco M. D. Pellegrino ◽  
Giuseppe Falci ◽  
Elisabetta Paladino

AbstractWe investigate critical current noise in short ballistic graphene Josephson junctions in the open-circuit gate-voltage limit within the McWorther model. We find flicker noise in a wide frequency range and discuss the temperature dependence of the noise amplitude as a function of the doping level. At the charge neutrality point we find a singular temperature dependence $$T^{-3}$$ T - 3 , strikingly different from the linear dependence expected for short ballistic graphene Josephson junctions under fixed gate voltage.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mohammad T. Haque ◽  
Marco Will ◽  
Matti Tomi ◽  
Preeti Pandey ◽  
Manohar Kumar ◽  
...  

AbstractWe have studied 1/f noise in critical current $$I_c$$ I c in h-BN encapsulated monolayer graphene contacted by NbTiN electrodes. The sample is close to diffusive limit and the switching supercurrent with hysteresis at Dirac point amounts to $$\simeq 5$$ ≃ 5 nA. The low frequency noise in the superconducting state is measured by tracking the variation in magnitude and phase of a reflection carrier signal $$v_{rf}$$ v rf at 600–650 MHz. We find 1/f critical current fluctuations on the order of $$\delta I_c/I_c \simeq 10^{-3}$$ δ I c / I c ≃ 10 - 3 per unit band at 1 Hz. The noise power spectrum of critical current fluctuations $$S_{I_c}$$ S I c measured near the Dirac point at large, sub-critical rf-carrier amplitudes obeys the law $$S_{I_c}/{I{_c}}^2 = a/f^{\beta }$$ S I c / I c 2 = a / f β where $$a\simeq 4\times 10^{-6}$$ a ≃ 4 × 10 - 6 and $$\beta \simeq 1$$ β ≃ 1 at $$f > 0.1$$ f > 0.1  Hz. Our results point towards significant fluctuations in $$I_c$$ I c originating from variation of the proximity induced gap in the graphene junction.


2019 ◽  
Vol 32 (12) ◽  
pp. 124001 ◽  
Author(s):  
Fedor Gömöry ◽  
Ján Šouc ◽  
Miroslav Adámek ◽  
Asef Ghabeli ◽  
Mykola Solovyov ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document