Impact of back-gate biasing on effective field and mobility in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect-transistors

A. Ohata; N. Rodriguez; C. Navarro; L. Donetti; F. Gamiz; F. C. Fenouillet-Beranger; S. Cristoloveanu

doi:10.1063/1.4799612

Impact of back-gate biasing on effective field and mobility in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect-transistors

Journal of Applied Physics ◽

10.1063/1.4799612 ◽

2013 ◽

Vol 113 (14) ◽

pp. 144514 ◽

Cited By ~ 7

Author(s):

A. Ohata ◽

N. Rodriguez ◽

C. Navarro ◽

L. Donetti ◽

F. Gamiz ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Effective Field ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Back Gate

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Novel Silicon On Insulator Metal Oxide Semiconductor Field Effect Transistors with Buried Back Gate

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.2140 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 2140-2144 ◽

Cited By ~ 6

Author(s):

Hyuckjae Oh ◽

Hoon Choi ◽

Takeshi Sakaguchi ◽

JeoungChill Shim ◽

Hiroyuki Kurino ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Back Gate

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Origin of the front-back-gate coupling in partially depleted and fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors with accumulated back gate

Journal of Applied Physics ◽

10.1063/1.2138380 ◽

2005 ◽

Vol 98 (11) ◽

pp. 114506 ◽

Cited By ~ 14

Author(s):

N. Lukyanchikova ◽

N. Garbar ◽

A. Smolanka ◽

M. Lokshin ◽

E. Simoen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Back Gate ◽

Fully Depleted

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Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress

Chinese Physics Letters ◽

10.1088/0256-307x/31/12/126101 ◽

2014 ◽

Vol 31 (12) ◽

pp. 126101 ◽

Cited By ~ 2

Author(s):

Qi-Wen Zheng ◽

Jiang-Wei Cui ◽

Xue-Feng Yu ◽

Qi Guo ◽

Hang Zhou ◽

...

Keyword(s):

Metal Oxide ◽

Gate Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Total Ionizing Dose ◽

Back Gate ◽

Voltage Stress

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1378329 ◽

2001 ◽

Vol 90 (2) ◽

pp. 866-870 ◽

Cited By ~ 6

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Self Consistent ◽

Doped Silicon

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Comparisons of Radio-Frequency Performance of Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.7635 ◽

2007 ◽

Vol 46 (12) ◽

pp. 7635-7638 ◽

Cited By ~ 2

Author(s):

Yasushi Hiraoka ◽

Satoshi Matsumoto

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor

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Self-Aligned Asymmetric Metal–Oxide–Semiconductor Field Effect Transistors Fabricated on Silicon-on-Insulator

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.091201 ◽

2009 ◽

Vol 48 (9) ◽

pp. 091201

Author(s):

Jong Pil Kim ◽

Jae Young Song ◽

Sang Wan Kim ◽

Jae Hyun Park ◽

Woo Young Choi ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor

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Modeling the performance of short-channel fully depleted silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs)

Silicon-On-Insulator (SOI) Technology ◽

10.1533/9780857099259.1.77 ◽

2014 ◽

pp. 77-101

Author(s):

S. Ghosh

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted

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Investigation of Mobility Enhancement Effect in Process-Induced Strained Ultrathin Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2124 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2124-2126 ◽

Cited By ~ 1

Author(s):

Akiko Ohata ◽

Claire Gallon ◽

Claire Fenouillet-Beranger ◽

Sorin Cristoloveanu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Enhancement Effect

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Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04dc12 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DC12 ◽

Cited By ~ 1

Author(s):

Shuhei Amakawa ◽

Asato Toda ◽

Katsuroh Ohyama ◽

Naoya Higashiguchi ◽

Daisuke Hori ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Substrate Current ◽

History Effect ◽

Universal Relationship

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