High optical gain of I–VII semiconductor quantum wells for efficient light-emitting devices

2013 ◽  
Vol 102 (12) ◽  
pp. 121114 ◽  
Author(s):  
Doyeol Ahn ◽  
Shun Lien Chuang
Keyword(s):  
Quantum Wells ◽  
Optical Gain ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Semiconductor Quantum Wells

Proposal to Use GaAs(114) Substrates for Improvement of the Optical Transition Probability in Nitride Semiconductor Quantum Wells

2003 ◽  
Vol 798 ◽  
Author(s):  
Mitsuru Funato ◽  
Yoshinobu Kawaguchi ◽  
Shigeo Fujita
Keyword(s):  
Quantum Wells ◽  
Optical Transition ◽  
Transition Probability ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Semiconductor Quantum Wells ◽  
Emission Lifetime ◽  
Quantum Disks ◽  
The Difference ◽  
Optical Transition Probability

ABSTRACTThe dependence of the spontaneous emission lifetime of excitons in InGaN/GaN quantum disks (QDs) on the crystalline orientation is calculated. For 1-nm-thick QDs, it is found that the lifetime in the conventional c-oriented QDs is ten times as long as that in QDs tilted by 30° and 90°, and that the difference is pronounced by increasing the QDs thickness. This is totally due to the presence of the electric field in strained InGaN. Taking into account our preceding study, in which it was revealed that GaN on GaAs(114) was titled by 30°, we propose the use of GaAs(114) as a substrate for nitride light emitting devices to improve the optical transition probability.

scholarly journals Multipolar lasing modes from topological corner states

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Ha-Reem Kim ◽  
Min-Soo Hwang ◽  
Daria Smirnova ◽  
Kwang-Yong Jeong ◽  
Yuri Kivshar ◽  
...  
Keyword(s):  
Domain Walls ◽  
Optical Gain ◽  
Topological Phases ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Finite Systems ◽  
Large Size ◽  
Topological States ◽  
Lasing Modes ◽  
Directional Transport

AbstractTopological photonics provides a fundamental framework for robust manipulation of light, including directional transport and localization with built-in immunity to disorder. Combined with an optical gain, active topological cavities hold special promise for a design of light-emitting devices. Most studies to date have focused on lasing at topological edges of finite systems or domain walls. Recently discovered higher-order topological phases enable strong high-quality confinement of light at the corners. Here, we demonstrate lasing action of corner states in nanophotonic topological structures. We identify several multipole corner modes with distinct emission profiles via hyperspectral imaging and discern signatures of non-Hermitian radiative coupling of leaky topological states. In addition, depending on the pump position in a large-size cavity, we generate selectively lasing from either edge or corner states within the topological bandgap. Our studies provide the direct observation of multipolar lasing and engineered collective resonances in active topological nanostructures.

Luminescence Properties in Er,O-codoped GaAs Light-Emitting Devices with Double Excitation Mechanism

2008 ◽  
Vol 1111 ◽  
Author(s):  
Yasufumi Fujiwara ◽  
Kei Fujii ◽  
Ayafumi Fujita ◽  
Yuji Ota ◽  
Yoshiaki Ito ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Current Density ◽  
Threshold Current ◽  
Energy Separation ◽  
Emission Region ◽  
Lasing Wavelength ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Er Doping ◽  
Ultrafast Carrier

AbstractWe fabricated a laser diode (LD) exhibiting a lasing from strained GaInAs quantum wells (QWs) embedded in Er,O-codoped GaAs (GaAs:Er,O) by organometallic vapor phase epitaxy (OMVPE). The lasing wavelength was designed to tune to the energy separation between the second excited states 4I11/2 and the ground state 4I15/2 of Er3+ ions. The threshold current for the lasing at room temperature was six times larger than that of a GaInAs QW-LD without Er doping, reflecting ultrafast carrier capture by an Er-related trap in GaAs:Er,O. The Er intensity revealed initially steep increase with injected current density in the region for spontaneous emission from the GaInAs QWs. In the stimulated QW emission region, the intensity continued to increase with the current density.

scholarly journals GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices

2018 ◽  
Vol 113 (8) ◽  
pp. 082102 ◽  
Author(s):  
I. A. Ajia ◽  
Y. Yamashita ◽  
K. Lorenz ◽  
M. M. Muhammed ◽  
L. Spasevski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Light Emitting Devices

Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices

2008 ◽  
Vol 23 (2-4) ◽  
pp. 406-409 ◽  
Author(s):  
Sung-Nam Lee ◽  
H. S. Paek ◽  
J. K. Son ◽  
H. Kim ◽  
K. K. Kim ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Light Emitting Devices
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