Improvement of the performance characteristics of deep violet InGaN multi-quantum-well laser diodes using step-graded electron blocking layers and a delta barrier

2013 ◽  
Vol 113 (12) ◽  
pp. 123108 ◽  
Author(s):  
Gh. Alahyarizadeh ◽  
Z. Hassan ◽  
F. K. Yam
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Performance Characteristics ◽  
Quantum Well Laser ◽  
Multi Quantum Well ◽  
Deep Violet

Numerical study on optimization of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers

2009 ◽  
Author(s):  
Jun-Rong Chen ◽  
Tsung-Shine Ko ◽  
Po-Yuan Su ◽  
Tien-Chang Lu ◽  
Hao-Chung Kuo ◽  
...  
Keyword(s):  
Quantum Well ◽  
Numerical Study ◽  
Laser Diodes ◽  
Barrier Layers ◽  
Quantum Well Laser ◽  
Multi Quantum Well

Near Room Temperature CW Operation of 660 nm Visible AlGaAs Multi-Quantum-Well Laser Diodes Grown by Molecular Beam Epitaxy

1985 ◽  
Vol 24 (Part 2, No. 12) ◽  
pp. L911-L913 ◽  
Author(s):  
Hidetoshi Iwamura ◽  
Tadashi Saku ◽  
Yoshiro Hirayama ◽  
Yoshifumi Suzuki ◽  
Hiroshi Okamoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Cw Operation ◽  
Multi Quantum Well

Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation

1997 ◽  
Vol 70 (20) ◽  
pp. 2753-2755 ◽  
Author(s):  
Shuji Nakamura ◽  
Masayuki Senoh ◽  
Shin-ichi Nagahama ◽  
Naruhito Iwasa ◽  
Takao Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Continuous Wave Operation ◽  
Multi Quantum Well

scholarly journals Performance characteristics of cw InGaN multiple-quantum-well laser diodes

2000 ◽  
Vol 639 ◽  
Author(s):  
Michael Kneissl ◽  
William S. Wong ◽  
Chris. G. Van de Walle ◽  
John E. Northrup ◽  
David W. Treat ◽  
...  
Keyword(s):  
Quantum Well ◽  
Continuous Wave ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Chemical Vapor ◽  
Performance Characteristics ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Lift Off ◽  
Multiple Quantum Well Laser

ABSTRACTThe performance characteristics are reported for continuous-wave (cw) InGaN multiple-quantum-well laser diodes grown on epitaxially laterally overgrown GaN on sapphire substrates by metalorganic chemical vapor deposition. Room-temperature cw threshold currents as low as 41mA with operating voltages of 6.0V were obtained. The emission wavelength was near 400 nm with output powers greater than 20 mW per facet. Under cw conditions laser oscillation was observed up to 90°C. A significant reduction in thermal resistance was observed for laser diodes transferred from sapphire onto Cu substrates by excimer laser lift-off, resulting in increased cw output power of more than 100mW.

High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates

2000 ◽  
Vol 39 (Part 2, No. 7A) ◽  
pp. L647-L650 ◽  
Author(s):  
Shin-ichi Nagahama ◽  
Naruhito Iwasa ◽  
Masayuki Senoh ◽  
Toshio Matsushita ◽  
Yasunobu Sugimoto ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Low Dislocation Density ◽  
Long Lifetime ◽  
Multi Quantum Well

200 MeV proton damage effects on multi-quantum well laser diodes

1997 ◽  
Vol 44 (6) ◽  
pp. 1898-1905 ◽  
Author(s):  
Y.F. Zhao ◽  
A.R. Patwary ◽  
R.D. Schrimpf ◽  
M.A. Neifeld ◽  
K.F. Galloway
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Multi Quantum Well
Sign in / Sign up

Export Citation Format

Share Document